Jeffrey B. Casady

Person

Starkville, MS, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical junction field effect transistors with improved thermal ch...
- Patent number 8,884,270
- Issue date Nov 11, 2014
- Power Integrations, Inc.
- Janna Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,432,171
- Issue date Oct 7, 2008
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench field-effect transistors in wide bandgap semiconduct...
- Patent number 7,242,040
- Issue date Jul 10, 2007
- SemiSouth Laboratories, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench field-effect transistors in wide bandgap semiconduct...
- Patent number 7,119,380
- Issue date Oct 10, 2006
- SemiSouth Laboratories, Inc.
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Patent number 7,009,209
- Issue date Mar 7, 2006
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned transistor and diode topologies in silicon carbide thr...
- Patent number 6,767,783
- Issue date Jul 27, 2004
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary accumulation-mode JFET integrated circuit topology us...
- Patent number 6,503,782
- Issue date Jan 7, 2003
- Mississippi State University Research and Technology Corporation (RTC)
- Jeffrey Blaine Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transist...
- Patent number 6,410,396
- Issue date Jun 25, 2002
- Mississippi State University
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CH...
- Publication number 20120261675
- Publication date Oct 18, 2012
- SS SC IP, LLC
- Janna CASADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral trench field-effect transistors in wide bandgap semiconduct...
- Publication number 20070012946
- Publication date Jan 18, 2007
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20060160316
- Publication date Jul 20, 2006
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral trench field-effect transistors in wide bandgap semiconduct...
- Publication number 20060113561
- Publication date Jun 1, 2006
- Igor Sankin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned transistor and diode topologies in silicon carbide thr...
- Publication number 20030034495
- Publication date Feb 20, 2003
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide and related wide-bandgap transistors on semi-insula...
- Publication number 20020149021
- Publication date Oct 17, 2002
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary accumulation-mode JFET integrated circuit topology us...
- Publication number 20020123174
- Publication date Sep 5, 2002
- Jeffrey Blaine Casady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSIST...
- Publication number 20020076890
- Publication date Jun 20, 2002
- Jeffrey B. Casady
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey B. Casady

Person

Patents Grantslast 30 patents

Vertical junction field effect transistors with improved thermal ch...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Lateral trench field-effect transistors in wide bandgap semiconduct...

Lateral trench field-effect transistors in wide bandgap semiconduct...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Self-aligned transistor and diode topologies in silicon carbide thr...

Complementary accumulation-mode JFET integrated circuit topology us...

Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transist...

Patents Applicationslast 30 patents

VERTICAL JUNCTION FIELD EFFECT TRANSISTORS WITH IMPROVED THERMAL CH...

Lateral trench field-effect transistors in wide bandgap semiconduct...

Silicon Carbide and related wide-bandgap transistors on semi-insula...

Lateral trench field-effect transistors in wide bandgap semiconduct...

Self-aligned transistor and diode topologies in silicon carbide thr...

Silicon carbide and related wide-bandgap transistors on semi-insula...

Complementary accumulation-mode JFET integrated circuit topology us...

SILICON CARBIDE: GERMANIUM (SIC:GE) HETEROJUNCTION BIPOLAR TRANSIST...