Jeffrey R. LaRoche

Person

Lowell, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tunable monolithic group III-nitride filter banks
- Patent number 11,848,662
- Issue date Dec 19, 2023
- Raytheon Company
- Jason C. Soric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip EMF isolation of an integrated circuit coupled with photoco...
- Patent number 11,710,708
- Issue date Jul 25, 2023
- Raytheon Company
- Matthew DeJarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photoconductive semiconductor switch laterally fabricated alongside...
- Patent number 11,581,448
- Issue date Feb 14, 2023
- Raytheon Company
- Matthew DeJarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,515,410
- Issue date Nov 29, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having improved gate structures
- Patent number 11,476,154
- Issue date Oct 18, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for field effect transistor
- Patent number 11,239,326
- Issue date Feb 1, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneously integrated power converter assembly
- Patent number 11,205,953
- Issue date Dec 21, 2021
- Raytheon Company
- Boris S. Jacobson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structures having low capacitance gate contacts integrated...
- Patent number 11,177,216
- Issue date Nov 16, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneously integrated power converter assembly
- Patent number 10,566,896
- Issue date Feb 18, 2020
- Raytheon Company
- Boris S. Jacobson
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method for forming gate structures for group III-V field effect tra...
- Patent number 10,566,428
- Issue date Feb 18, 2020
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible power converter architecture based on interposer and modul...
- Patent number 10,340,812
- Issue date Jul 2, 2019
- Raytheon Company
- Boris S. Jacobson
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,224,285
- Issue date Mar 5, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,096,550
- Issue date Oct 9, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for forming microstrip transmission lines on...
- Patent number 9,761,445
- Issue date Sep 12, 2017
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave integrated circuit (MMIC) damascene electrical interconne...
- Patent number 9,478,508
- Issue date Oct 25, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having column III-V isolation regions
- Patent number 9,356,045
- Issue date May 31, 2016
- Raytheon Company
- Jonathan P. Comeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for forming microstrip transmission lines on...
- Patent number 9,331,153
- Issue date May 3, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon based opto-electric circuits
- Patent number 8,853,745
- Issue date Oct 7, 2014
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure having monolithic heterogeneous integration of...
- Patent number 8,575,666
- Issue date Nov 5, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gold-free ohmic contacts
- Patent number 8,466,555
- Issue date Jun 18, 2013
- Raytheon Company
- Ram V. Chelakara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure having silicon CMOS transistors with column III-V transis...
- Patent number 8,212,294
- Issue date Jul 3, 2012
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having both elemental and compound semicon...
- Patent number 7,994,550
- Issue date Aug 9, 2011
- Raytheon Company
- Valery S. Kaper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron aluminum nitride diamond heterostructure
- Patent number 7,968,865
- Issue date Jun 28, 2011
- Raytheon Company
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Electrical contacts for CMOS devices and III-V devices formed on a...
- Patent number 7,834,456
- Issue date Nov 16, 2010
- Raytheon Company
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boron aluminum nitride diamond heterostructure
- Patent number 7,557,378
- Issue date Jul 7, 2009
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LAYER RESONATOR ASSEMBLY AND METHOD FOR FABRICATING SAME
- Publication number 20230216480
- Publication date Jul 6, 2023
- Raytheon Company
- Lovelace Soirez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20230073459
- Publication date Mar 9, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-SCALE DIRECT BONDED ARRAY CORE BLOCK FOR AN ACTIVE ELECTRONIC...
- Publication number 20230065622
- Publication date Mar 2, 2023
- Raytheon Company
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ON-CHIP EMF ISOLATION OF AN INTEGRATED CIRCUIT COUPLED WITH PHOTOCO...
- Publication number 20230056601
- Publication date Feb 23, 2023
- Raytheon Company
- Matthew DeJarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE...
- Publication number 20220320360
- Publication date Oct 6, 2022
- Raytheon Company
- Matthew DeJarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE...
- Publication number 20220320152
- Publication date Oct 6, 2022
- Raytheon Company
- Matthew DeJarld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20220140126
- Publication date May 5, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE MONOLITHIC GROUP III-NITRIDE FILTER BANKS
- Publication number 20220085795
- Publication date Mar 17, 2022
- Raytheon Company
- Jason C. Soric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HERETEROGENOUSLY INTEGRATED POWER CONVERTER ASSEMBLY
- Publication number 20210273558
- Publication date Sep 2, 2021
- Raytheon Company
- Boris S. Jacobson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING IMPROVED GATE STRUCTURES
- Publication number 20210098285
- Publication date Apr 1, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...
- Publication number 20200083167
- Publication date Mar 12, 2020
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING GATE STRUCTURES FOR GROUP III-V FIELD EFFECT TRA...
- Publication number 20190237552
- Publication date Aug 1, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190237554
- Publication date Aug 1, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUSLY INTEGRATED POWER CONVERTER ASSEMBLY
- Publication number 20190149039
- Publication date May 16, 2019
- Raytheon Company
- Boris S. Jacobson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190097001
- Publication date Mar 28, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLEXIBLE POWER CONVERTER ARCHITECTURE BASED ON INTERPOSER AND MODUL...
- Publication number 20190081567
- Publication date Mar 14, 2019
- Raytheon Company
- Boris S. Jacobson
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240753
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240754
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...
- Publication number 20160211136
- Publication date Jul 21, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...
- Publication number 20150171171
- Publication date Jun 18, 2015
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...
- Publication number 20150059640
- Publication date Mar 5, 2015
- Raytheon Company
- Jeffrey R. LaRoche
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING COLUMN III-V ISOLATION REGIONS
- Publication number 20140361371
- Publication date Dec 11, 2014
- Jonathan P. Comeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...
- Publication number 20130082281
- Publication date Apr 4, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GOLD-FREE OHMIC CONTACTS
- Publication number 20120305931
- Publication date Dec 6, 2012
- Raytheon Company
- Ram V. Chelakara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSIS...
- Publication number 20110180857
- Publication date Jul 28, 2011
- Raytheon Company
- William E. Hoke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICON...
- Publication number 20100295104
- Publication date Nov 25, 2010
- Raytheon Company
- Valery S. Kaper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON BASED OPTO-ELECTRIC CIRCUITS
- Publication number 20100181601
- Publication date Jul 22, 2010
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL CONTACTS FOR CMOS DEVICES AND III-V DEVICES FORMED ON A...
- Publication number 20100181674
- Publication date Jul 22, 2010
- Kamal Tabatabaie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE
- Publication number 20100090228
- Publication date Apr 15, 2010
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE
- Publication number 20080121897
- Publication date May 29, 2008
- Jeffrey R. LaRoche
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Jeffrey R. LaRoche

Person

Patents Grantslast 30 patents

Tunable monolithic group III-nitride filter banks

Group III-V semiconductor structures having crystalline regrowth la...

On-chip EMF isolation of an integrated circuit coupled with photoco...

Photoconductive semiconductor switch laterally fabricated alongside...

Group III-V semiconductor structures having crystalline regrowth la...

Field effect transistor having improved gate structures

Electrode structure for field effect transistor

Heterogeneously integrated power converter assembly

Nitride structures having low capacitance gate contacts integrated...

Heterogeneously integrated power converter assembly

Method for forming gate structures for group III-V field effect tra...

Flexible power converter architecture based on interposer and modul...

Nitride structure having gold-free contact and methods for forming...

Nitride structure having gold-free contact and methods for forming...

Methods and structures for forming microstrip transmission lines on...

Microwave integrated circuit (MMIC) damascene electrical interconne...

Semiconductor structure having column III-V isolation regions

Methods and structures for forming microstrip transmission lines on...

Silicon based opto-electric circuits

Method and structure having monolithic heterogeneous integration of...

Gold-free ohmic contacts

Structure having silicon CMOS transistors with column III-V transis...

Semiconductor structures having both elemental and compound semicon...

Boron aluminum nitride diamond heterostructure

Electrical contacts for CMOS devices and III-V devices formed on a...

Boron aluminum nitride diamond heterostructure

Patents Applicationslast 30 patents

MULTI-LAYER RESONATOR ASSEMBLY AND METHOD FOR FABRICATING SAME

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

WAFER-SCALE DIRECT BONDED ARRAY CORE BLOCK FOR AN ACTIVE ELECTRONIC...

ON-CHIP EMF ISOLATION OF AN INTEGRATED CIRCUIT COUPLED WITH PHOTOCO...

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE...

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE...

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

TUNABLE MONOLITHIC GROUP III-NITRIDE FILTER BANKS

HERETEROGENOUSLY INTEGRATED POWER CONVERTER ASSEMBLY

FIELD EFFECT TRANSISTOR HAVING IMPROVED GATE STRUCTURES

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...

METHOD FOR FORMING GATE STRUCTURES FOR GROUP III-V FIELD EFFECT TRA...

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

HETEROGENEOUSLY INTEGRATED POWER CONVERTER ASSEMBLY

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

FLEXIBLE POWER CONVERTER ARCHITECTURE BASED ON INTERPOSER AND MODUL...

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...

METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...

METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...

SEMICONDUCTOR STRUCTURE HAVING COLUMN III-V ISOLATION REGIONS

METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...

GOLD-FREE OHMIC CONTACTS

STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSIS...

SEMICONDUCTOR STRUCTURES HAVING BOTH ELEMENTAL AND COMPOUND SEMICON...

SILICON BASED OPTO-ELECTRIC CIRCUITS

ELECTRICAL CONTACTS FOR CMOS DEVICES AND III-V DEVICES FORMED ON A...

BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE

BORON ALUMINUM NITRIDE DIAMOND HETEROSTRUCTURE