Jeffrey W. Sleight

Person

Ridgefield, CT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Graphene/nanostructure FET with self-aligned contact and gate
- Patent number 12,166,106
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Jeffrey W. Sleight
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Superconducting circuit provided on an encapsulated vacuum cavity
- Patent number 12,041,856
- Issue date Jul 16, 2024
- International Business Machines Corporation
- Isaac Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vacuum encapsulated Josephson junction
- Patent number 11,678,591
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Isaac Lauer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Qubits with ion implant Josephson junctions
- Patent number 11,538,977
- Issue date Dec 27, 2022
- International Business Machines Corporation
- Ryan T. Gordon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for creating a local interconnect using a SOI wafer
- Patent number 10,699,955
- Issue date Jun 30, 2020
- ELPIS TECHNOLOGIES INC.
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor nanowire
- Patent number 10,580,894
- Issue date Mar 3, 2020
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Hybrid III-V technology to support multiple supply voltages and off...
- Patent number 10,366,892
- Issue date Jul 30, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implementing a hybrid finFET device and nanowire device utilizing s...
- Patent number 10,361,219
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Support for long channel length nanowire transistors
- Patent number 10,354,960
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Josephson junction with spacer
- Patent number 10,170,679
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wire-last gate-all-around nanowire FET
- Patent number 10,170,634
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for creating a local interconnect using a SOI wafer
- Patent number 10,056,293
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor nanowire
- Patent number 10,056,487
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Support for long channel length nanowire transistors
- Patent number 9,997,472
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Expitaxially regrown heterostructure nanowire lateral tunnel field...
- Patent number 9,960,233
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,954,063
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,954,062
- Issue date Apr 24, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Josephson junction with spacer
- Patent number 9,929,334
- Issue date Mar 27, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid III-V technology to support multiple supply voltages and off...
- Patent number 9,922,830
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Support for long channel length nanowire transistors
- Patent number 9,922,942
- Issue date Mar 20, 2018
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mixed lithography approach for E-beam and optical exposure using HSQ
- Patent number 9,917,057
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local germanium condensation for suspended nanowire and finFET devices
- Patent number 9,859,430
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar double-gate lamellar field-effect transistor
- Patent number 9,859,375
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...
- Patent number 9,812,370
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for dual dielectric thickness for a nanowire CMOS techno...
- Patent number 9,754,965
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Generation of multiple diameter nanowire field effect transistors
- Patent number 9,728,619
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Sarunya Bangsaruntip
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor testing devices
- Patent number 9,728,624
- Issue date Aug 8, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Support for long channel length nanowire transistors
- Patent number 9,691,715
- Issue date Jun 27, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for generating nanowire pad data from pre-existing desig...
- Patent number 9,684,753
- Issue date Jun 20, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Expitaxially regrown heterostructure nanowire lateral tunnel field...
- Patent number 9,660,027
- Issue date May 23, 2017
- GLOBALFOUNDRIES Inc.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
QUBITS WITH ION IMPLANT JOSEPHSON JUNCTIONS
- Publication number 20220181536
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Ryan T. Gordon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERCONDUCTING CIRCUIT PROVIDED ON AN ENCAPSULATED VACUUM CAVITY
- Publication number 20220102613
- Publication date Mar 31, 2022
- International Business Machines Corporation
- Isaac Lauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VACUUM ENCAPSULATED JOSEPHSON JUNCTION
- Publication number 20220102612
- Publication date Mar 31, 2022
- International Business Machines Corporation
- Isaac Lauer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
GRAPHENE/NANOSTRUCTURE FET WITH SELF-ALIGNED CONTACT AND GATE
- Publication number 20220093772
- Publication date Mar 24, 2022
- International Business Machines Corporation
- Josephine Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
IMPLEMENTING A HYBRID FINFET DEVICE AND NANOWIRE DEVICE UTILIZING S...
- Publication number 20190288012
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Creating a Local Interconnect Using a SOI Wafer
- Publication number 20180330989
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR NANOWIRE
- Publication number 20180254345
- Publication date Sep 6, 2018
- International Business Machines Corporation
- Josephine B. Chang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Hybrid III-V Technology to Support Multiple Supply Voltages and Off...
- Publication number 20180174844
- Publication date Jun 21, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JOSEPHSON JUNCTION WITH SPACER
- Publication number 20180040800
- Publication date Feb 8, 2018
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...
- Publication number 20170263707
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
- Publication number 20170236944
- Publication date Aug 17, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIRE-LAST GATE-ALL-AROUND NANOWIRE FET
- Publication number 20170194509
- Publication date Jul 6, 2017
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
- Publication number 20170154959
- Publication date Jun 1, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TESTING DEVICES
- Publication number 20170125550
- Publication date May 4, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...
- Publication number 20170110539
- Publication date Apr 20, 2017
- GLOBALFOUNDRIES INC.
- Siddarth A. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR NANOWIRE
- Publication number 20170084745
- Publication date Mar 23, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mixed Lithography Approach for E-Beam and Optical Exposure Using HSQ
- Publication number 20170077036
- Publication date Mar 16, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
- Publication number 20170069715
- Publication date Mar 9, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Dual Dielectric Thickness for a Nanowire CMOS Techno...
- Publication number 20170062476
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...
- Publication number 20170040219
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
- Publication number 20170018608
- Publication date Jan 19, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
- Publication number 20170018508
- Publication date Jan 19, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLEMENTING A HYBRID FINFET DEVICE AND NANOWIRE DEVICE UTILIZING S...
- Publication number 20170005112
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL GERMANIUM CONDENSATION FOR SUSPENDED NANOWIRE AND FINFET DEVICES
- Publication number 20170005190
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Multiple Gate Workfunctions for a Nanowire CMOS Tech...
- Publication number 20160359011
- Publication date Dec 8, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CHANNEL TFET
- Publication number 20160308025
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FINFET/NANOWIRE SRAM CELL USING SELECTIVE GERMANIUM CONDENSA...
- Publication number 20160293610
- Publication date Oct 6, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND AND GERMANIUM COMPOUND NANOWIRE SUSPENSION WITH GERM...
- Publication number 20160284805
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR MULTIPLE GATE WORKFUNCTIONS FOR A NANOWIRE CMOS TECH...
- Publication number 20160284810
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques for Dual Dielectric Thickness for a Nanowire CMOS Techno...
- Publication number 20160284604
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Josephine B. Chang
- H01 - BASIC ELECTRIC ELEMENTS

Jeffrey W. Sleight

Person

Patents Grantslast 30 patents

Graphene/nanostructure FET with self-aligned contact and gate

Superconducting circuit provided on an encapsulated vacuum cavity

Vacuum encapsulated Josephson junction

Qubits with ion implant Josephson junctions

Techniques for creating a local interconnect using a SOI wafer

Strained semiconductor nanowire

Hybrid III-V technology to support multiple supply voltages and off...

Implementing a hybrid finFET device and nanowire device utilizing s...

Support for long channel length nanowire transistors

Josephson junction with spacer

Wire-last gate-all-around nanowire FET

Techniques for creating a local interconnect using a SOI wafer

Strained semiconductor nanowire

Support for long channel length nanowire transistors

Expitaxially regrown heterostructure nanowire lateral tunnel field...

Stacked planar double-gate lamellar field-effect transistor

Stacked planar double-gate lamellar field-effect transistor

Josephson junction with spacer

Hybrid III-V technology to support multiple supply voltages and off...

Support for long channel length nanowire transistors

Mixed lithography approach for E-beam and optical exposure using HSQ

Local germanium condensation for suspended nanowire and finFET devices

Stacked planar double-gate lamellar field-effect transistor

III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid...

Techniques for dual dielectric thickness for a nanowire CMOS techno...

Generation of multiple diameter nanowire field effect transistors

Semiconductor testing devices

Support for long channel length nanowire transistors

Techniques for generating nanowire pad data from pre-existing desig...

Expitaxially regrown heterostructure nanowire lateral tunnel field...

Patents Applicationslast 30 patents

QUBITS WITH ION IMPLANT JOSEPHSON JUNCTIONS

SUPERCONDUCTING CIRCUIT PROVIDED ON AN ENCAPSULATED VACUUM CAVITY

VACUUM ENCAPSULATED JOSEPHSON JUNCTION

GRAPHENE/NANOSTRUCTURE FET WITH SELF-ALIGNED CONTACT AND GATE

IMPLEMENTING A HYBRID FINFET DEVICE AND NANOWIRE DEVICE UTILIZING S...

Techniques for Creating a Local Interconnect Using a SOI Wafer

STRAINED SEMICONDUCTOR NANOWIRE

Hybrid III-V Technology to Support Multiple Supply Voltages and Off...

JOSEPHSON JUNCTION WITH SPACER

EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...

SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS

WIRE-LAST GATE-ALL-AROUND NANOWIRE FET

SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS

SEMICONDUCTOR TESTING DEVICES

EXPITAXIALLY REGROWN HETEROSTRUCTURE NANOWIRE LATERAL TUNNEL FIELD...

STRAINED SEMICONDUCTOR NANOWIRE

Mixed Lithography Approach for E-Beam and Optical Exposure Using HSQ

SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS

Techniques for Dual Dielectric Thickness for a Nanowire CMOS Techno...

III-V, SiGe, or Ge Base Lateral Bipolar Transistor and CMOS Hybrid...

SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS

SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS

IMPLEMENTING A HYBRID FINFET DEVICE AND NANOWIRE DEVICE UTILIZING S...

LOCAL GERMANIUM CONDENSATION FOR SUSPENDED NANOWIRE AND FINFET DEVICES

Techniques for Multiple Gate Workfunctions for a Nanowire CMOS Tech...

REPLACEMENT CHANNEL TFET

HYBRID FINFET/NANOWIRE SRAM CELL USING SELECTIVE GERMANIUM CONDENSA...

III-V COMPOUND AND GERMANIUM COMPOUND NANOWIRE SUSPENSION WITH GERM...

TECHNIQUES FOR MULTIPLE GATE WORKFUNCTIONS FOR A NANOWIRE CMOS TECH...

Techniques for Dual Dielectric Thickness for a Nanowire CMOS Techno...