Jein-Chen Young

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stackable resistive cross-point memory with schottky diode isolation
- Patent number 7,408,212
- Issue date Aug 5, 2008
- Winbond Electronics Corporation
- Harry S. Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and resulting structure for PCMO film to obtain etching rate...
- Patent number 7,186,658
- Issue date Mar 6, 2007
- Winbond Electronics Corporation
- Kenlin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly two-transistor EEPROM cell with differentially doped fl...
- Patent number 6,693,830
- Issue date Feb 17, 2004
- Lattice Semiconductor Corp.
- Yongzhong Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Compact single-poly two transistor EEPROM cell
- Patent number 6,627,947
- Issue date Sep 30, 2003
- Lattice Semiconductor Corporation
- Yongzhong Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase method for flash memory
- Patent number 6,525,970
- Issue date Feb 25, 2003
- Hyundai Electronics America
- Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating flash memory
- Patent number 6,366,499
- Issue date Apr 2, 2002
- Hyundai Electronics America
- Arthur Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating flash memory
- Patent number 6,347,054
- Issue date Feb 12, 2002
- Hyundai Electronics America
- Arthur Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure for flash memory enabling low operating pot...
- Patent number 6,330,190
- Issue date Dec 11, 2001
- Hyundai Electronics America
- Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple well flash memory fabrication process
- Patent number 6,043,123
- Issue date Mar 28, 2000
- Hyundai Electronics America, Inc.
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for bulk preprogramming flash memory cells wit...
- Patent number 5,920,506
- Issue date Jul 6, 1999
- Hyundai Electronics America, Inc.
- Hsingya Arthur Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming oxide isolation in a semiconductor device
- Patent number 5,899,726
- Issue date May 4, 1999
- Advanced Micro Devices, Inc.
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving oxide isolation in a semiconductor device
- Patent number 5,866,467
- Issue date Feb 2, 1999
- Advanced Micro Devices, Inc.
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E.sup.2 PROM device having erase gate in oxide isolation region in...
- Patent number 5,818,082
- Issue date Oct 6, 1998
- Advanced Micro Devices, Inc.
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Triple well flash memory cell and fabrication process
- Publication number 20020048192
- Publication date Apr 25, 2002
- Hsingya Arthur Wang
- H01 - BASIC ELECTRIC ELEMENTS

Jein-Chen Young

Person

Patents Grantslast 30 patents

Stackable resistive cross-point memory with schottky diode isolation

Method and resulting structure for PCMO film to obtain etching rate...

Single-poly two-transistor EEPROM cell with differentially doped fl...

Compact single-poly two transistor EEPROM cell

Erase method for flash memory

Method of operating flash memory

Method of operating flash memory

Semiconductor structure for flash memory enabling low operating pot...

Triple well flash memory fabrication process

Method and apparatus for bulk preprogramming flash memory cells wit...

Method of forming oxide isolation in a semiconductor device

Method of improving oxide isolation in a semiconductor device

E.sup.2 PROM device having erase gate in oxide isolation region in...

Patents Applicationslast 30 patents

Triple well flash memory cell and fabrication process