Jeng-Wei Yu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field-effect transistor device and method of forming
- Patent number 12,094,778
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 12,057,450
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined source/drain epitaxy regions and method forming same
- Patent number 11,948,971
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 11,908,742
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy regions with large landing areas for contact plugs
- Patent number 11,652,105
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with stacked semiconductor layers as channels
- Patent number 11,257,908
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Hsi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined source/drain epitaxy regions and method forming same
- Patent number 11,101,347
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 11,037,826
- Issue date Jun 15, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming same
- Patent number 10,879,128
- Issue date Dec 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with arc-like...
- Patent number 10,546,784
- Issue date Jan 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having merged epitaxial features with Arc-like...
- Patent number 10,049,936
- Issue date Aug 14, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective photo-enhanced wet oxidation for nitride layer...
- Patent number 8,871,546
- Issue date Oct 28, 2014
- Opto Tech Corporation
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective photo-enhanced wet oxidation for nitride layer...
- Patent number 8,809,832
- Issue date Aug 19, 2014
- Opto Tech Corporation
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of separating nitride films from growth substrates by select...
- Patent number 8,679,883
- Issue date Mar 25, 2014
- Opto Tech Corporation
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with large viewing angle and fabricating metho...
- Patent number 8,487,325
- Issue date Jul 16, 2013
- Opto Tech Corporation
- Chen-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of separating nitride films from the growth substrates by se...
- Patent number 8,481,353
- Issue date Jul 9, 2013
- Opto Tech Corporation
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective photo-enhanced wet oxidation for nitride layer...
- Patent number 8,409,892
- Issue date Apr 2, 2013
- Opto Tech Corporation
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control spacer width
- Patent number 7,001,784
- Issue date Feb 21, 2006
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Jyh-Shiou Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING
- Publication number 20240363418
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS
- Publication number 20240355826
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...
- Publication number 20240249979
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Source/Drain Epitaxy Regions and Method Forming Same
- Publication number 20240204044
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Field-Effect Transistor Device and Method of Forming
- Publication number 20220415715
- Publication date Dec 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220384437
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Undoped Region Under Source/Drain And Method Forming Same
- Publication number 20220336640
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors with Stacked Semiconductor Layers as Channels
- Publication number 20220181440
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Hsi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxy Regions with Large Landing Areas for Contact Plugs
- Publication number 20220028856
- Publication date Jan 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Chi Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME
- Publication number 20210376073
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Merged Epitaxial Features with Arc-Like...
- Publication number 20210313230
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Confined Source/Drain Epitaxy Regions and Method Forming Same
- Publication number 20200176560
- Publication date Jun 4, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeng-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Merged Epitaxial Features with Arc-Like...
- Publication number 20200161185
- Publication date May 21, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors with Stacked Semiconductor Layers as Channels
- Publication number 20200135861
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Hsi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming Same
- Publication number 20200075423
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Merged Epitaxial Features with Arc-Like...
- Publication number 20180350687
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...
- Publication number 20180174912
- Publication date Jun 21, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER...
- Publication number 20140252308
- Publication date Sep 11, 2014
- OPTO TECH CORPORATION
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER...
- Publication number 20140131750
- Publication date May 15, 2014
- OPTO TECH CORPORATION
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEPARATING NITRIDE FILMS FROM GROWTH SUBSTRATES BY SELECT...
- Publication number 20130228807
- Publication date Sep 5, 2013
- OPTO TECH CORPORATION
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Separating Nitride Films from the Growth Substrates by Se...
- Publication number 20120264247
- Publication date Oct 18, 2012
- OPTO TECH CORPORATION
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer...
- Publication number 20120264246
- Publication date Oct 18, 2012
- OPTO TECH CORPORATION
- Lung-Han Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHO...
- Publication number 20120228655
- Publication date Sep 13, 2012
- OPTO TECH CORPORATION
- Chen-Yen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to control spacer width
- Publication number 20050064722
- Publication date Mar 24, 2005
- Taiwan Semicondutor Manufacturing Co.
- Jyh-Shiou Hsu
- H01 - BASIC ELECTRIC ELEMENTS

Jeng-Wei Yu

Person

Patents Grantslast 30 patents

Fin field-effect transistor device and method of forming

Method for forming an undoped region under a source/drain

Epitaxy regions with large landing areas for contact plugs

Confined source/drain epitaxy regions and method forming same

Semiconductor device having merged epitaxial features with arc-like...

Epitaxy regions with large landing areas for contact plugs

Transistors with stacked semiconductor layers as channels

Confined source/drain epitaxy regions and method forming same

Semiconductor device having merged epitaxial features with arc-like...

Semiconductor device and method of forming same

Semiconductor device having merged epitaxial features with arc-like...

Semiconductor device having merged epitaxial features with Arc-like...

Method of selective photo-enhanced wet oxidation for nitride layer...

Method of selective photo-enhanced wet oxidation for nitride layer...

Method of separating nitride films from growth substrates by select...

Light emitting diode with large viewing angle and fabricating metho...

Method of separating nitride films from the growth substrates by se...

Method of selective photo-enhanced wet oxidation for nitride layer...

Method to control spacer width

Patents Applicationslast 30 patents

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING

EPITAXY REGIONS WITH LARGE LANDING AREAS FOR CONTACT PLUGS

SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...

Confined Source/Drain Epitaxy Regions and Method Forming Same

Fin Field-Effect Transistor Device and Method of Forming

Epitaxy Regions with Large Landing Areas for Contact Plugs

Undoped Region Under Source/Drain And Method Forming Same

Transistors with Stacked Semiconductor Layers as Channels

Epitaxy Regions with Large Landing Areas for Contact Plugs

CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME

Semiconductor Device Having Merged Epitaxial Features with Arc-Like...

Confined Source/Drain Epitaxy Regions and Method Forming Same

Semiconductor Device Having Merged Epitaxial Features with Arc-Like...

Transistors with Stacked Semiconductor Layers as Channels

Semiconductor Device and Method of Forming Same

Semiconductor Device Having Merged Epitaxial Features with Arc-Like...

SEMICONDUCTOR DEVICE HAVING MERGED EPITAXIAL FEATURES WITH ARC-LIKE...

METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER...

METHOD OF SELECTIVE PHOTO-ENHANCED WET OXIDATION FOR NITRIDE LAYER...

METHOD OF SEPARATING NITRIDE FILMS FROM GROWTH SUBSTRATES BY SELECT...

Method of Separating Nitride Films from the Growth Substrates by Se...

Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer...

LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHO...

Novel method to control spacer width