Jeong Dong KIM

Person

Scappoose, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD diode solution for nanoribbon architectures
- Patent number 11,996,403
- Issue date May 28, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,862,703
- Issue date Jan 2, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single gated 3D nanowire inverter for high density thick gate SOC a...
- Patent number 11,791,380
- Issue date Oct 17, 2023
- Intel Corporation
- Rahul Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,437,483
- Issue date Sep 6, 2022
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20240088253
- Publication date Mar 14, 2024
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20230420501
- Publication date Dec 28, 2023
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20220359697
- Publication date Nov 10, 2022
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20210280683
- Publication date Sep 9, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...
- Publication number 20210193844
- Publication date Jun 24, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES
- Publication number 20210183850
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20210184000
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...
- Publication number 20210184001
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS
- Publication number 20210184032
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...
- Publication number 20210184045
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...
- Publication number 20210184051
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...
- Publication number 20210183857
- Publication date Jun 17, 2021
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS

Jeong Dong KIM

Person

Patents Grantslast 30 patents

High voltage extended-drain MOS (EDMOS) nanowire transistors

ESD diode solution for nanoribbon architectures

Gate-all-around integrated circuit structures having dual nanoribbo...

Single gated 3D nanowire inverter for high density thick gate SOC a...

Gate-all-around integrated circuit structures having dual nanoribbo...

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...

ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...

HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS

HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...

CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...

NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...