Jeong-Seok Na

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Depositing ruthenium layers in interconnect metallization
- Patent number 10,731,250
- Issue date Aug 4, 2020
- Lam Research Corporation
- Do Young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese barrier and adhesion layers for cobalt
- Patent number 10,438,847
- Issue date Oct 8, 2019
- Lam Research Corporation
- Chiukin Steven Lai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective deposition of WCN barrier/adhesion layer for interconnect
- Patent number 10,283,404
- Issue date May 7, 2019
- Lam Research Corporation
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatus for forming smooth and conformal cobalt film...
- Patent number 10,242,879
- Issue date Mar 26, 2019
- Lam Research Corporation
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Systems and methods for forming low resistivity metal contacts and...
- Patent number 10,229,826
- Issue date Mar 12, 2019
- Lam Research Corporation
- Raihan Tarafdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for void-free cobalt gap fill
- Patent number 9,748,137
- Issue date Aug 29, 2017
- Lam Research Corporation
- Chiukin Steven Lai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for void-free cobalt gap fill
- Patent number 9,349,637
- Issue date May 24, 2016
- Lam Research Corporation
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Systems and methods for remote plasma atomic layer deposition
- Patent number 9,255,326
- Issue date Feb 9, 2016
- Novellus Systems, Inc.
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ion-induced atomic layer deposition of tantalum
- Patent number 8,747,964
- Issue date Jun 10, 2014
- Novellus Systems, Inc.
- Kie Jin Park
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MOLYBDENUM DEPOSITION IN FEATURES
- Publication number 20240047269
- Publication date Feb 8, 2024
- LAM RESEARCH CORPORATION
- Jeong-Seok NA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOLYBDENUM DEPOSITION
- Publication number 20220328317
- Publication date Oct 13, 2022
- LAM RESEARCH CORPORATION
- Jeong-Seok NA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DEPOSITING RUTHENIUM LAYERS IN INTERCONNECT METALLIZATION
- Publication number 20180347041
- Publication date Dec 6, 2018
- LAM RESEARCH CORPORATION
- Do Young Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM...
- Publication number 20180308701
- Publication date Oct 25, 2018
- LAM RESEARCH CORPORATION
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE DEPOSITION OF WCN BARRIER/ADHESION LAYER FOR INTERCONNECT
- Publication number 20180286746
- Publication date Oct 4, 2018
- LAM RESEARCH CORPORATION
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEMS AND METHODS FOR FORMING LOW RESISTIVITY METAL CONTACTS AND...
- Publication number 20180114694
- Publication date Apr 26, 2018
- LAM RESEARCH CORPORATION
- Raihan Tarafdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANGANESE BARRIER AND ADHESION LAYERS FOR COBALT
- Publication number 20170330797
- Publication date Nov 16, 2017
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR VOID-FREE COBALT GAP FILL
- Publication number 20160056074
- Publication date Feb 25, 2016
- LAM RESEARCH CORPORATION
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR VOID-FREE COBALT GAP FILL
- Publication number 20160056077
- Publication date Feb 25, 2016
- LAM RESEARCH CORPORATION
- Chiukin Steven Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR REMOTE PLASMA ATOMIC LAYER DEPOSITION
- Publication number 20140272185
- Publication date Sep 18, 2014
- Jeong-Seok Na
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ION-INDUCED ATOMIC LAYER DEPOSITION OF TANTALUM
- Publication number 20120115325
- Publication date May 10, 2012
- Kie Jin PARK
- B82 - NANO-TECHNOLOGY

Jeong-Seok Na

Person

Patents Grantslast 30 patents

Depositing ruthenium layers in interconnect metallization

Manganese barrier and adhesion layers for cobalt

Selective deposition of WCN barrier/adhesion layer for interconnect

Methods and apparatus for forming smooth and conformal cobalt film...

Systems and methods for forming low resistivity metal contacts and...

Method for void-free cobalt gap fill

Method for void-free cobalt gap fill

Systems and methods for remote plasma atomic layer deposition

Ion-induced atomic layer deposition of tantalum

Patents Applicationslast 30 patents

MOLYBDENUM DEPOSITION IN FEATURES

MOLYBDENUM DEPOSITION

DEPOSITING RUTHENIUM LAYERS IN INTERCONNECT METALLIZATION

METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM...

SELECTIVE DEPOSITION OF WCN BARRIER/ADHESION LAYER FOR INTERCONNECT

SYSTEMS AND METHODS FOR FORMING LOW RESISTIVITY METAL CONTACTS AND...

MANGANESE BARRIER AND ADHESION LAYERS FOR COBALT

METHOD FOR VOID-FREE COBALT GAP FILL

METHOD FOR VOID-FREE COBALT GAP FILL

SYSTEMS AND METHODS FOR REMOTE PLASMA ATOMIC LAYER DEPOSITION

ION-INDUCED ATOMIC LAYER DEPOSITION OF TANTALUM