Jer-Chyi Wang

Person

Taoyuan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell having a recessed gate and manufacturing method thereof
- Patent number 9,105,505
- Issue date Aug 11, 2015
- Inotera Memories, Inc.
- Chien-Chi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed-gate transistor device having a dielectric layer with mult...
- Patent number 8,343,829
- Issue date Jan 1, 2013
- Nanya Technology Corp.
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed-gate transistor device having a dielectric layer with mult...
- Patent number 7,994,559
- Issue date Aug 9, 2011
- Nanya Technology Corp.
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-bit flash memory
- Patent number 7,956,403
- Issue date Jun 7, 2011
- Nanya Technology Corporation
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two bit U-shaped memory structure and method of making the same
- Patent number 7,667,262
- Issue date Feb 23, 2010
- Nanya Technology Corp.
- Wei-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLOATING GATE NON-VOLATILE MEMORY DEVICE
- Publication number 20190148540
- Publication date May 16, 2019
- Chang Gung University
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL HAVING A RECESSED GATE AND MANUFACTURING METHOD THEREOF
- Publication number 20140312401
- Publication date Oct 23, 2014
- INOTERA MEMORIES, INC.
- Chien-Chi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE TRANSISTOR DEVICE HAVING A DIELECTRIC LAYER WITH MULT...
- Publication number 20110256697
- Publication date Oct 20, 2011
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESS CHANNEL TRANSISTOR
- Publication number 20090267126
- Publication date Oct 29, 2009
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO BIT U-SHAPED MEMORY STRUCTURE AND METHOD OF MAKING THE SAME
- Publication number 20090256189
- Publication date Oct 15, 2009
- Wei-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED-GATE TRANSISTOR DEVICE HAVING A DIELECTRIC LAYER WITH MULT...
- Publication number 20090114968
- Publication date May 7, 2009
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY
- Publication number 20090108321
- Publication date Apr 30, 2009
- NANYA TECHNOLOGY CORPORATION
- Ming-Cheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ELEVATED CHANNEL FLASH DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090090955
- Publication date Apr 9, 2009
- NANYA TECHNOLOGY CORPORATION
- Jer-Chyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-BIT FLASH MEMORY
- Publication number 20090085089
- Publication date Apr 2, 2009
- NANYA TECHNOLOGY CORPORATION
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-BIT FLASH MEMORY CELL STRUCTURE AND METHOD OF MAKING THE SAME
- Publication number 20090020801
- Publication date Jan 22, 2009
- Wei-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20090017604
- Publication date Jan 15, 2009
- NANYA TECHNOLOGY CORPORATION
- Mao-Ying WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20080283904
- Publication date Nov 20, 2008
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20080265342
- Publication date Oct 30, 2008
- Ming-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20060105530
- Publication date May 18, 2006
- NANYA TECHNOLOGY CORPORATION
- Chao-Sung Lai
- H01 - BASIC ELECTRIC ELEMENTS

Jer-Chyi Wang

Person

Patents Grantslast 30 patents

Memory cell having a recessed gate and manufacturing method thereof

Recessed-gate transistor device having a dielectric layer with mult...

Recessed-gate transistor device having a dielectric layer with mult...

Two-bit flash memory

Two bit U-shaped memory structure and method of making the same

Patents Applicationslast 30 patents

FLOATING GATE NON-VOLATILE MEMORY DEVICE

MEMORY CELL HAVING A RECESSED GATE AND MANUFACTURING METHOD THEREOF

RECESSED-GATE TRANSISTOR DEVICE HAVING A DIELECTRIC LAYER WITH MULT...

RECESS CHANNEL TRANSISTOR

TWO BIT U-SHAPED MEMORY STRUCTURE AND METHOD OF MAKING THE SAME

RECESSED-GATE TRANSISTOR DEVICE HAVING A DIELECTRIC LAYER WITH MULT...

FLASH MEMORY

ELEVATED CHANNEL FLASH DEVICE AND MANUFACTURING METHOD THEREOF

TWO-BIT FLASH MEMORY

TWO-BIT FLASH MEMORY CELL STRUCTURE AND METHOD OF MAKING THE SAME

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME

TWO-BIT FLASH MEMORY CELL AND METHOD FOR MANUFACTURING THE SAME

Method for fabricating semiconductor device