Jerzy Garczynski

Person

Lomianki, PL

People

Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor (HEMT) made of layers of Group XI...
- Patent number 8,754,449
- Issue date Jun 17, 2014
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk mono-crystalline gallium-containing nitride and its application
- Patent number 8,398,767
- Issue date Mar 19, 2013
- Ammono S.A.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for epitaxy and method of preparing the same
- Patent number 8,110,848
- Issue date Feb 7, 2012
- Ammono Sp. z o.o.
- Robert Dwilinski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming light-emitting device using nitride bulk single c...
- Patent number 7,935,550
- Issue date May 3, 2011
- Ammono Sp. z o.o.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of obtaining bulk single crystals by seeded growth
- Patent number 7,905,957
- Issue date Mar 15, 2011
- Ammono Sp. Z.O.O.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of preparing light emitting device
- Patent number 7,871,843
- Issue date Jan 18, 2011
- Ammono Sp. z o.o.
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Patent number 7,811,380
- Issue date Oct 12, 2010
- Ammono Sp. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element structure using nitride bulk single crystal...
- Patent number 7,750,355
- Issue date Jul 6, 2010
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk monocrystalline gallium nitride
- Patent number 7,744,697
- Issue date Jun 29, 2010
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphor single crystal substrate and method for preparing the same...
- Patent number 7,589,358
- Issue date Sep 15, 2009
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gallium-containing nitride bulk single crystal on...
- Patent number 7,422,633
- Issue date Sep 9, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nitride mono-crystal including substrate for epitaxy
- Patent number 7,420,261
- Issue date Sep 2, 2008
- Ammono Sp. z o.o.
- Robert Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Template type substrate and a method of preparing the same
- Patent number 7,410,539
- Issue date Aug 12, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for epitaxy and method of preparing the same
- Patent number 7,387,677
- Issue date Jun 17, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and equipment for manufacturing aluminum nitride bulk single...
- Patent number 7,374,615
- Issue date May 20, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining of bulk monocrystalline gallium-containing ni...
- Patent number 7,364,619
- Issue date Apr 29, 2008
- Ammono SP. ZO.O
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for obtaining a bulk single crystal using supercritical a...
- Patent number 7,335,262
- Issue date Feb 26, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Patent number 7,314,517
- Issue date Jan 1, 2008
- Ammono Sp. Z.O.O.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor laser device and a method for improving its p...
- Patent number 7,315,559
- Issue date Jan 1, 2008
- Ammono Sp. z o.o.
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Patent number 7,252,712
- Issue date Aug 7, 2007
- Ammono Sp. z o.o.
- Robert Tomasz Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Patent number 7,160,388
- Issue date Jan 9, 2007
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk nitride mono-crystal including substrate for epitaxy
- Patent number 7,132,730
- Issue date Nov 7, 2006
- Ammono Sp. z.o.o.
- Robert Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bulk single crystal of gallium nitride
- Patent number 7,081,162
- Issue date Jul 25, 2006
- Nichia Corporation
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor laser device and manufacturing method thereof
- Patent number 7,057,211
- Issue date Jun 6, 2006
- Ammono SP. ZO.O
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk monocrystalline gallium nitride
- Patent number 6,656,615
- Issue date Dec 2, 2003
- Nichia Corporation
- Robert Tomasz Dwiliński
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRID...
- Publication number 20100327292
- Publication date Dec 30, 2010
- AMMONO SP. z o.o.
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL...
- Publication number 20090315012
- Publication date Dec 24, 2009
- AMMONO, Sp. zo.o
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Application
Substrate for epitaxy and method of preparing the same
- Publication number 20080311393
- Publication date Dec 18, 2008
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk Mono-Crystalline Gallium-Containing Nitride and Its Application
- Publication number 20080303032
- Publication date Dec 11, 2008
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride Single Crystal Seeded Growth in Supercritical Ammonia with...
- Publication number 20080156254
- Publication date Jul 3, 2008
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-Emitting Device Structure Using Nitride Bulk Single Crystal L...
- Publication number 20080108162
- Publication date May 8, 2008
- Ammono SP.ZO.O
- Robert DWILINSKI
- C30 - CRYSTAL GROWTH
Information Patent Application
High Electron Mobility Transistor (Hemt) Made of Layers of Group XI...
- Publication number 20080067523
- Publication date Mar 20, 2008
- Robert Dwilinski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor laser device and a method for improving its p...
- Publication number 20080050855
- Publication date Feb 28, 2008
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk nitride mono-crystal including substrate for epitaxy
- Publication number 20070040240
- Publication date Feb 22, 2007
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk single crystal production facility employing supercritical amm...
- Publication number 20060191472
- Publication date Aug 31, 2006
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting device structure having nitride bulk single crystal...
- Publication number 20060138431
- Publication date Jun 29, 2006
- Robert Dwilinski
- B82 - NANO-TECHNOLOGY
Information Patent Application
Process for obtaining bulk-crystalline gallium-containing nitride
- Publication number 20060120931
- Publication date Jun 8, 2006
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Template type substrate and a method of preparing the same
- Publication number 20060057749
- Publication date Mar 16, 2006
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Phosphor single crystal substrate and method for preparing the same...
- Publication number 20060054076
- Publication date Mar 16, 2006
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for epitaxy and method of preparing the same
- Publication number 20060054075
- Publication date Mar 16, 2006
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for obtaining bulk mono-crystalline gallium-containing nitride
- Publication number 20060037530
- Publication date Feb 23, 2006
- AMMONO SP. z o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for obtaining of bulk monocrystalline gallium-containing ni...
- Publication number 20060032428
- Publication date Feb 16, 2006
- AMMONO. Sp. z.o.o.
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor laser device and a method for improving its p...
- Publication number 20050249255
- Publication date Nov 10, 2005
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and equipment for manufacturing aluminum nitride bulk single...
- Publication number 20050087124
- Publication date Apr 28, 2005
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for epitaxy
- Publication number 20040261692
- Publication date Dec 30, 2004
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for forming gallium-containing nitride bulk single crystal o...
- Publication number 20040255840
- Publication date Dec 23, 2004
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Light emitting element structure using nitride bulk single crystal...
- Publication number 20040251471
- Publication date Dec 16, 2004
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing bulk single crystal of gallium nitride
- Publication number 20040244680
- Publication date Dec 9, 2004
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor laser device and manufacturing method therefor
- Publication number 20040238810
- Publication date Dec 2, 2004
- Robert Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Publication number 20040139912
- Publication date Jul 22, 2004
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk monocrystalline gallium nitride
- Publication number 20040089221
- Publication date May 13, 2004
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Process and apparatus for obtaining bulk monocrystalline gallium-co...
- Publication number 20020189531
- Publication date Dec 19, 2002
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH
Information Patent Application
Bulk monocrystalline gallium nitride
- Publication number 20020192507
- Publication date Dec 19, 2002
- Robert Tomasz Dwilinski
- C30 - CRYSTAL GROWTH

Jerzy Garczynski

Person

Patents Grantslast 30 patents

High electron mobility transistor (HEMT) made of layers of Group XI...

Bulk mono-crystalline gallium-containing nitride and its application

Substrate for epitaxy and method of preparing the same

Method of forming light-emitting device using nitride bulk single c...

Method of obtaining bulk single crystals by seeded growth

Method of preparing light emitting device

Process for obtaining bulk mono-crystalline gallium-containing nitride

Light emitting element structure using nitride bulk single crystal...

Bulk monocrystalline gallium nitride

Phosphor single crystal substrate and method for preparing the same...

Method of forming gallium-containing nitride bulk single crystal on...

Bulk nitride mono-crystal including substrate for epitaxy

Template type substrate and a method of preparing the same

Substrate for epitaxy and method of preparing the same

Method and equipment for manufacturing aluminum nitride bulk single...

Process for obtaining of bulk monocrystalline gallium-containing ni...

Apparatus for obtaining a bulk single crystal using supercritical a...

Process for obtaining bulk mono-crystalline gallium-containing nitride

Nitride semiconductor laser device and a method for improving its p...

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Bulk nitride mono-crystal including substrate for epitaxy

Method of manufacturing bulk single crystal of gallium nitride

Nitride semiconductor laser device and manufacturing method thereof

Bulk monocrystalline gallium nitride

Patents Applicationslast 30 patents

METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRID...

LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL...

Substrate for epitaxy and method of preparing the same

Bulk Mono-Crystalline Gallium-Containing Nitride and Its Application

Nitride Single Crystal Seeded Growth in Supercritical Ammonia with...

Light-Emitting Device Structure Using Nitride Bulk Single Crystal L...

High Electron Mobility Transistor (Hemt) Made of Layers of Group XI...

Nitride semiconductor laser device and a method for improving its p...

Bulk nitride mono-crystal including substrate for epitaxy

Bulk single crystal production facility employing supercritical amm...

Light emitting device structure having nitride bulk single crystal...

Process for obtaining bulk-crystalline gallium-containing nitride

Template type substrate and a method of preparing the same

Phosphor single crystal substrate and method for preparing the same...

Substrate for epitaxy and method of preparing the same

Process for obtaining bulk mono-crystalline gallium-containing nitride

Process for obtaining of bulk monocrystalline gallium-containing ni...

Nitride semiconductor laser device and a method for improving its p...

Method and equipment for manufacturing aluminum nitride bulk single...

Substrate for epitaxy

Method for forming gallium-containing nitride bulk single crystal o...

Light emitting element structure using nitride bulk single crystal...

Method of manufacturing bulk single crystal of gallium nitride

Nitride semiconductor laser device and manufacturing method therefor

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Bulk monocrystalline gallium nitride

Process and apparatus for obtaining bulk monocrystalline gallium-co...

Bulk monocrystalline gallium nitride