Jessica Dechene

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 12,183,634
- Issue date Dec 31, 2024
- Adeia Semiconductor Solutions LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 11,837,501
- Issue date Dec 5, 2023
- TESSERA LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion cut for gate structures
- Patent number 11,810,812
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 11,257,717
- Issue date Feb 22, 2022
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion cut for gate structures
- Patent number 11,127,623
- Issue date Sep 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 10,832,952
- Issue date Nov 10, 2020
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with self-aligned and non-self-aligned con...
- Patent number 10,833,160
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 10,636,706
- Issue date Apr 28, 2020
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,586,733
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inversion method and structure for selective contact via patte...
- Patent number 10,453,751
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Xiaofeng Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing a pre-RMG replacement m...
- Patent number 10,325,819
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 10,276,436
- Issue date Apr 30, 2019
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for replacement contact for a finFET...
- Patent number 10,269,654
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,224,239
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicate spacers for fully aligned vias
- Patent number 10,211,138
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,204,827
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing step height difference...
- Patent number 10,204,797
- Issue date Feb 12, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicate spacers for fully aligned vias
- Patent number 10,049,974
- Issue date Aug 14, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 9,859,212
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,754,942
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,748,146
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single spacer for complementary metal oxide semiconductor process flow
- Patent number 9,450,095
- Issue date Sep 20, 2016
- International Business Machines Corporation
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20250140611
- Publication date May 1, 2025
- Adeia Semiconductor Solutions LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20240347383
- Publication date Oct 17, 2024
- Adeia Semiconductor Solutions LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION CUT FOR GATE STRUCTURES
- Publication number 20240030059
- Publication date Jan 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20220181205
- Publication date Jun 9, 2022
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION CUT FOR GATE STRUCTURES
- Publication number 20210351068
- Publication date Nov 11, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20210082758
- Publication date Mar 18, 2021
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...
- Publication number 20200335591
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Michael Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF FINFET SEMICONDUCTOR DEVICES
- Publication number 20200227323
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- HUI ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...
- Publication number 20200211903
- Publication date Jul 2, 2020
- GLOBALFOUNDRIES INC.
- JIEHUI SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION CUT FOR GATE STRUCTURES
- Publication number 20200185266
- Publication date Jun 11, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20190157140
- Publication date May 23, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20180315654
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20180315653
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SILICATE SPACERS FOR FULLY ALIGNED VIAS
- Publication number 20180269144
- Publication date Sep 20, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...
- Publication number 20180261510
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Xiaofeng QIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SILICATE SPACERS FOR FULLY ALIGNED VIAS
- Publication number 20180061750
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20180040510
- Publication date Feb 8, 2018
- International Business Machines Corporation
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019202
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019200
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019203
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW
- Publication number 20170229350
- Publication date Aug 10, 2017
- International Business Machines Corporation
- MARC A. BERGENDAHL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW
- Publication number 20170229463
- Publication date Aug 10, 2017
- International Business Machines Corporation
- MARC A. BERGENDAHL
- H01 - BASIC ELECTRIC ELEMENTS

Jessica Dechene

Person

Patents Grantslast 30 patents

Selective recessing to form a fully aligned via

Selective recessing to form a fully aligned via

Single diffusion cut for gate structures

Selective recessing to form a fully aligned via

Single diffusion cut for gate structures

Selective recessing to form a fully aligned via

Field-effect transistors with self-aligned and non-self-aligned con...

Selective recessing to form a fully aligned via

Multi-level air gap formation in dual-damascene structure

Tone inversion method and structure for selective contact via patte...

Methods, apparatus and system for providing a pre-RMG replacement m...

Selective recessing to form a fully aligned via

Methods, apparatus and system for replacement contact for a finFET...

Multi-level air gap formation in dual-damascene structure

Metal silicate spacers for fully aligned vias

Multi-level air gap formation in dual-damascene structure

Methods, apparatus, and system for reducing step height difference...

Metal silicate spacers for fully aligned vias

Multi-level air gap formation in dual-damascene structure

Single spacer for complementary metal oxide semiconductor process flow

Single spacer for complementary metal oxide semiconductor process flow

Single spacer for complementary metal oxide semiconductor process flow

Patents Applicationslast 30 patents

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

SINGLE DIFFUSION CUT FOR GATE STRUCTURES

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

SINGLE DIFFUSION CUT FOR GATE STRUCTURES

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED AND NON-SELF-ALIGNED CON...

ISOLATION STRUCTURES OF FINFET SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE WITH SHAPED TRENCH AND METHODS OF FORMING T...

SINGLE DIFFUSION CUT FOR GATE STRUCTURES

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

METAL SILICATE SPACERS FOR FULLY ALIGNED VIAS

TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...

METAL SILICATE SPACERS FOR FULLY ALIGNED VIAS

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW

SINGLE SPACER FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS FLOW