Jessica M. Torres

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures for germanium N-channel devices
- Patent number 11,973,143
- Issue date Apr 30, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures without fin end gap
- Patent number 11,869,889
- Issue date Jan 9, 2024
- Intel Corporation
- Szuya S. Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,869,894
- Issue date Jan 9, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,721,724
- Issue date Aug 8, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization structures for stacked device connectivity and their...
- Patent number 11,430,814
- Issue date Aug 30, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Activation of protected cross-linking catalysts during formation of...
- Patent number 11,406,972
- Issue date Aug 9, 2022
- Intel Corporation
- James M. Blackwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pitch quartered three-dimensional air gaps
- Patent number 11,152,254
- Issue date Oct 19, 2021
- Intel Corporation
- Manish Chandhok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,114,530
- Issue date Sep 7, 2021
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hardened plug for improved shorting margin
- Patent number 11,024,538
- Issue date Jun 1, 2021
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 10,763,347
- Issue date Sep 1, 2020
- Intel Corporation
- Payam Amin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Pore-filled dielectric materials for semiconductor structure fabric...
- Patent number 10,529,660
- Issue date Jan 7, 2020
- Intel Corporation
- Jessica M. Torres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Donor- or acceptor-based spin qubits with isotopically purified mat...
- Patent number 10,388,848
- Issue date Aug 20, 2019
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP
- Publication number 20240088143
- Publication date Mar 14, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...
- Publication number 20220344376
- Publication date Oct 27, 2022
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES
- Publication number 20220190159
- Publication date Jun 16, 2022
- Intel Corporation
- Rajat PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS
- Publication number 20210408239
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...
- Publication number 20210407996
- Publication date Dec 30, 2021
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20210328019
- Publication date Oct 21, 2021
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP
- Publication number 20210091075
- Publication date Mar 25, 2021
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20210036110
- Publication date Feb 4, 2021
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...
- Publication number 20200395386
- Publication date Dec 17, 2020
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20200313001
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HARDENED PLUG FOR IMPROVED SHORTING MARGIN
- Publication number 20200098629
- Publication date Mar 26, 2020
- Intel Corporation
- Kevin L. Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL LAYER FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRAN...
- Publication number 20200006523
- Publication date Jan 2, 2020
- Intel Corporation
- Matthew METZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PITCH QUARTERED THREE-DIMENSIONAL AIR GAPS
- Publication number 20190385897
- Publication date Dec 19, 2019
- Intel Corporation
- Manish CHANDHOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
- Publication number 20190334020
- Publication date Oct 31, 2019
- Intel Corporation
- Payam Amin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PORE-FILLED DIELECTRIC MATERIALS FOR SEMICONDUCTOR STRUCTURE FABRIC...
- Publication number 20190252313
- Publication date Aug 15, 2019
- Intel Corporation
- Jessica M. TORRES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DONOR- OR ACCEPTOR-BASED SPIN QUBITS WITH ISOTOPICALLY PURIFIED MAT...
- Publication number 20190044045
- Publication date Feb 7, 2019
- Intel Corporation
- Nicole K. Thomas
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ACTIVATION OF PROTECTED CROSS-LINKING CATALYSTS DURING FORMATION OF...
- Publication number 20180236440
- Publication date Aug 23, 2018
- Intel Corporation
- James M. BLACKWELL
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...

Jessica M. Torres

Person

Patents Grantslast 30 patents

Source or drain structures for germanium N-channel devices

Self-aligned gate endcap (SAGE) architectures without fin end gap

Metallization structures for stacked device connectivity and their...

Quantum well stacks for quantum dot devices

Metallization structures for stacked device connectivity and their...

Activation of protected cross-linking catalysts during formation of...

Pitch quartered three-dimensional air gaps

Quantum well stacks for quantum dot devices

Hardened plug for improved shorting margin

Quantum well stacks for quantum dot devices

Pore-filled dielectric materials for semiconductor structure fabric...

Donor- or acceptor-based spin qubits with isotopically purified mat...

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...

INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES

PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

METALLIZATION STRUCTURES FOR STACKED DEVICE CONNECTIVITY AND THEIR...

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

HARDENED PLUG FOR IMPROVED SHORTING MARGIN

CHANNEL LAYER FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRAN...

PITCH QUARTERED THREE-DIMENSIONAL AIR GAPS

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

PORE-FILLED DIELECTRIC MATERIALS FOR SEMICONDUCTOR STRUCTURE FABRIC...

DONOR- OR ACCEPTOR-BASED SPIN QUBITS WITH ISOTOPICALLY PURIFIED MAT...

ACTIVATION OF PROTECTED CROSS-LINKING CATALYSTS DURING FORMATION OF...