Jessica S. Kachian

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number RE50222
- Issue date Nov 26, 2024
- Sony Group Corporation
- Willy Rachmady
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 11,894,465
- Issue date Feb 6, 2024
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 10,950,733
- Issue date Mar 16, 2021
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number 10,418,487
- Issue date Sep 17, 2019
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 10,026,845
- Issue date Jul 17, 2018
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 10,008,565
- Issue date Jun 26, 2018
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,691,848
- Issue date Jun 27, 2017
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 9,640,671
- Issue date May 2, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,490,329
- Issue date Nov 8, 2016
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 9,337,291
- Issue date May 10, 2016
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number 9,252,275
- Issue date Feb 2, 2016
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,159,787
- Issue date Oct 13, 2015
- Intel Corporation
- Willy Rachmady
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 9,136,343
- Issue date Sep 15, 2015
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar gate all-around device and method of fabrication thereof
- Patent number 8,987,794
- Issue date Mar 24, 2015
- Intel Coporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial film growth on patterned substrate
- Patent number 8,785,907
- Issue date Jul 22, 2014
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 8,748,940
- Issue date Jun 10, 2014
- Intel Corporation
- Willy Rachmady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
ALD VS PVD IGZO CHANNEL AND ALOX CHANNEL PASSIVATION IN A 3D NAND V...
- Publication number 20240121964
- Publication date Apr 11, 2024
- Intel NDTM US LLC
- Jessica Sevanne KACHIAN
- G11 - INFORMATION STORAGE
Information Patent Application
LARGE GRAIN AND HALOGEN-FREE SILICON CELL CHANNEL FOR 3D NAND STRING
- Publication number 20230422506
- Publication date Dec 28, 2023
- Intel Corporation
- Jessica S. Kachian
Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20230402389
- Publication date Dec 14, 2023
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Gate-All-Around Semiconductor Device having Germanium or Group...
- Publication number 20210167216
- Publication date Jun 3, 2021
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...
- Publication number 20210143100
- Publication date May 13, 2021
- Intel Corporation
- Nanda Kumar Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...
- Publication number 20180301563
- Publication date Oct 18, 2018
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170288019
- Publication date Oct 5, 2017
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...
- Publication number 20170194506
- Publication date Jul 6, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170047401
- Publication date Feb 16, 2017
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...
- Publication number 20160233344
- Publication date Aug 11, 2016
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20160079422
- Publication date Mar 17, 2016
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices with germanium-rich active layers & doped tra...
- Publication number 20160049476
- Publication date Feb 18, 2016
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...
- Publication number 20150349077
- Publication date Dec 3, 2015
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20150144880
- Publication date May 28, 2015
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20140291772
- Publication date Oct 2, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20140225065
- Publication date Aug 14, 2014
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...
- Publication number 20140203327
- Publication date Jul 24, 2014
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE
- Publication number 20140175378
- Publication date Jun 26, 2014
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...
- Publication number 20140167108
- Publication date Jun 19, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE HAVING GERMANIUM-BASED ACTIVE REGIO...
- Publication number 20140091279
- Publication date Apr 3, 2014
- Jessica S. Kachian
- B82 - NANO-TECHNOLOGY

Jessica S. Kachian

Person

Patents Grantslast 30 patents

Non-planar gate all-around device and method of fabrication thereof

Deep gate-all-around semiconductor device having germanium or group...

Deep gate-all-around semiconductor device having germanium or group...

Non-planar gate all-around device and method of fabrication thereof

Deep gate-all-around semiconductor device having germanium or group...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Deep gate-all-around semiconductor device having germanium or group...

Semiconductor devices with germanium-rich active layers and doped t...

Deep gate-all-around semiconductor device having germanium or group...

Non-planar gate all-around device and method of fabrication thereof

Semiconductor devices with germanium-rich active layers and doped t...

Deep gate-all-around semiconductor device having germanium or group...

Non-planar gate all-around device and method of fabrication thereof

Epitaxial film growth on patterned substrate

Semiconductor devices with germanium-rich active layers and doped t...

Patents Applicationslast 30 patents

ALD VS PVD IGZO CHANNEL AND ALOX CHANNEL PASSIVATION IN A 3D NAND V...

LARGE GRAIN AND HALOGEN-FREE SILICON CELL CHANNEL FOR 3D NAND STRING

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

Deep Gate-All-Around Semiconductor Device having Germanium or Group...

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) M...

DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...

NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF

Semiconductor devices with germanium-rich active layers & doped tra...

DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...

NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF

DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP...

EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...

NON-PLANAR SEMICONDUCTOR DEVICE HAVING GERMANIUM-BASED ACTIVE REGIO...