Ji Xia

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 12,063,780
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory and fabrication method thereof
- Patent number 12,052,871
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
Information Patent Grant
Three-dimensional memory devices having through stair contacts and...
- Patent number 12,035,530
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,792,980
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,785,772
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through stair contacts and...
- Patent number 11,716,846
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,690,219
- Issue date Jun 27, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,653,495
- Issue date May 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,581,322
- Issue date Feb 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,532,636
- Issue date Dec 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for reducing stress in three-dimensional mem...
- Patent number 11,450,770
- Issue date Sep 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,411,014
- Issue date Aug 9, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory and fabrication method thereof
- Patent number 11,271,007
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,211,394
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,195,853
- Issue date Dec 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 11,133,325
- Issue date Sep 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,127,757
- Issue date Sep 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,101,286
- Issue date Aug 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Pan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 11,049,866
- Issue date Jun 29, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 10,879,254
- Issue date Dec 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,847,528
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through stair contacts and...
- Patent number 10,847,539
- Issue date Nov 24, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for reducing stress in three-dimensional mem...
- Patent number 10,825,929
- Issue date Nov 3, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer flatness control using backside compensation structure
- Patent number 10,763,099
- Issue date Sep 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure of a three-dimensional memory device
- Patent number 10,644,015
- Issue date May 5, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices having through array contacts and...
- Patent number 10,566,336
- Issue date Feb 18, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20240324224
- Publication date Sep 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20240032293
- Publication date Jan 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...
- Publication number 20240023333
- Publication date Jan 18, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...
- Publication number 20230301105
- Publication date Sep 21, 2023
- Yangtze Memory Technologies Co., Ltd.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20230255025
- Publication date Aug 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20220085044
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20220077171
- Publication date Mar 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20220028890
- Publication date Jan 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210399001
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210296333
- Publication date Sep 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210183878
- Publication date Jun 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20210159238
- Publication date May 27, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20210159244
- Publication date May 27, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210104531
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...
- Publication number 20210082953
- Publication date Mar 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20210082931
- Publication date Mar 18, 2021
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20210066337
- Publication date Mar 4, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050358
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050367
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...
- Publication number 20210050446
- Publication date Feb 18, 2021
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050366
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Pan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20210005625
- Publication date Jan 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20200243553
- Publication date Jul 30, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...
- Publication number 20200227555
- Publication date Jul 16, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jian Hua Sun
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...
- Publication number 20200212058
- Publication date Jul 2, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qinxiang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20200161322
- Publication date May 21, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20200161321
- Publication date May 21, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...
- Publication number 20200066739
- Publication date Feb 27, 2020
- Yangtze Memory Technologies Co., Ltd.
- Mei Lan Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE
- Publication number 20200058486
- Publication date Feb 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang Dai
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE
- Publication number 20190096901
- Publication date Mar 28, 2019
- Yangtze Memory Technologies Co., Ltd.
- Xiaowang DAI
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Memory cell structure of a three-dimensional memory device

Three-dimensional memory and fabrication method thereof

Three-dimensional memory devices having through stair contacts and...

Contact structures having conductive portions in substrate in three...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory devices having through stair contacts and...

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices having through array contacts and...

Structures and methods for reducing stress in three-dimensional mem...

Contact structures having conductive portions in substrate in three...

Three-dimensional memory and fabrication method thereof

Three-dimensional memory device with source structure and methods f...

Contact structures having conductive portions in substrate in three...

Memory cell structure of a three-dimensional memory device

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory devices having through array contacts and...

Three-dimensional memory devices having through array contacts and...

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices having through stair contacts and...

Structures and methods for reducing stress in three-dimensional mem...

Wafer flatness control using backside compensation structure

Memory cell structure of a three-dimensional memory device

Three-dimensional memory devices having through array contacts and...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE

STRUCTURES AND METHODS FOR REDUCING STRESS IN THREE-DIMENSIONAL MEM...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH STAIR CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

THREE-DIMENSIONAL MEMORY DEVICES HAVING THROUGH ARRAY CONTACTS AND...

WAFER FLATNESS CONTROL USING BACKSIDE COMPENSATION STRUCTURE

MEMORY CELL STRUCTURE OF A THREE-DIMENSIONAL MEMORY DEVICE