Jiahui Yuan

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device including an isolation-trench etch...
- Patent number 12,160,989
- Issue date Dec 3, 2024
- SanDisk Technologies LLC
- Ramy Nashed Bassely Said
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with optimized operation sequence
- Patent number 12,153,801
- Issue date Nov 26, 2024
- SANDISK TECHNOLOGIES LLC
- Yihang Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with tuning of erase process
- Patent number 12,154,630
- Issue date Nov 26, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Early detection of programming failure for non-volatile memory
- Patent number 12,148,489
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with adapting erase process
- Patent number 12,147,695
- Issue date Nov 19, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with zoned control for limiting programming for...
- Patent number 12,119,065
- Issue date Oct 15, 2024
- SanDisk Technoloiges LLC
- Xiaochen Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND string read voltage adjustment
- Patent number 12,105,963
- Issue date Oct 1, 2024
- SanDisk Technologies LLC
- Yi Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with suspension period during programming
- Patent number 12,100,461
- Issue date Sep 24, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with programmable resistance non-data word line
- Patent number 12,099,728
- Issue date Sep 24, 2024
- SANDISK TECHNOLOGIES LLC
- Towhidur Razzak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with differential temperature compensation for...
- Patent number 12,094,537
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with zone based program speed adjustment
- Patent number 12,094,546
- Issue date Sep 17, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory apparatus and method of operation using state dependent stro...
- Patent number 12,057,175
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power mode with read sequence adjustment
- Patent number 12,057,157
- Issue date Aug 6, 2024
- SanDisk Techn ologies LLC
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Grant
Soft erase process during programming of non-volatile memory
- Patent number 12,051,468
- Issue date Jul 30, 2024
- SANDISK TECHNOLOGIES LLC
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND memory with different pass voltage ramp rates for binary and m...
- Patent number 12,046,314
- Issue date Jul 23, 2024
- SanDisk Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with narrow and shallow erase
- Patent number 11,972,805
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line zone dependent pre-charge voltage
- Patent number 11,972,803
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with data refresh based on data states of adjac...
- Patent number 11,972,812
- Issue date Apr 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Verify techniques for current reduction in a memory device
- Patent number 11,972,814
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Xue Bai Pitner
- G11 - INFORMATION STORAGE
Information Patent Grant
Stress test for grown bad blocks
- Patent number 11,967,388
- Issue date Apr 23, 2024
- Western Digital Technologies, Inc.
- Sarath Puthenthermadam
- G11 - INFORMATION STORAGE
Information Patent Grant
Balancing peak power with programming speed in non-volatile memory
- Patent number 11,961,563
- Issue date Apr 16, 2024
- SANDISK TECHNOLOGIES LLC
- Towhidur Razzak
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell group read with compensation for different programming...
- Patent number 11,955,184
- Issue date Apr 9, 2024
- SanDisk Technologies LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Dummy cell resistance tuning in NAND strings
- Patent number 11,935,593
- Issue date Mar 19, 2024
- SanDisk Technologies LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with differential temperature compensation for...
- Patent number 11,894,071
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling bit line pre-charge voltage separately for multi-level...
- Patent number 11,887,670
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Loop dependent word line ramp start time for program verify of mult...
- Patent number 11,875,043
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory with staggered ramp down at the end of pre-char...
- Patent number 11,862,249
- Issue date Jan 2, 2024
- SanDisk Technologies LLC
- Xiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with adjusted bit line voltage during verify
- Patent number 11,837,296
- Issue date Dec 5, 2023
- SanDisk Technologies LLC
- Yu-Chung Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with reverse state program
- Patent number 11,790,994
- Issue date Oct 17, 2023
- Western Digital Technologies, Inc.
- Ming Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with updating of read compare voltages based on...
- Patent number 11,791,001
- Issue date Oct 17, 2023
- SanDisk Technologies LLC
- Yi Song
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY WITH DECLINE STATE OPERATION
- Publication number 20240404608
- Publication date Dec 5, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM VERIFY WORD LINE RAMPING DELAY FOR LOWER CURRENT CONSUMPTIO...
- Publication number 20240395343
- Publication date Nov 28, 2024
- Western Digital Technologies, Inc.
- Abu Naser Zainuddin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERASE SATURATION MITIGATION IN NON-VOLATILE MEMORY
- Publication number 20240379175
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-STEP READ PASS VOLTAGE DISCHARGE FOR ICC REDUCTION
- Publication number 20240379170
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Albert Bor Kai Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...
- Publication number 20240355400
- Publication date Oct 24, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SECURE ERASE
- Publication number 20240338131
- Publication date Oct 10, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH ADAPTING ERASE PROCESS
- Publication number 20240319905
- Publication date Sep 26, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INDEPENDENT PLANE CONCURRENT MEMORY OPERATION IN NON-VOLATILE MEMOR...
- Publication number 20240296882
- Publication date Sep 5, 2024
- Western Digital Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
OPEN BLOCK READ ICC REDUCTION
- Publication number 20240290395
- Publication date Aug 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
FAST LOOK NEIGHBOR AHEAD FOR DATA RECOVERY
- Publication number 20240282358
- Publication date Aug 22, 2024
- Western Digital Technologies, Inc.
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE READ METHOD FOR READ TIME PERFORMANCE IMPROVEMENT OF NON-V...
- Publication number 20240282363
- Publication date Aug 22, 2024
- Western Digital Technologies, Inc.
- Albert Chen
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHOD FOR SELECTIVELY REDUCING CHARGE PUMP SPEED DUR...
- Publication number 20240257878
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SMART CONTROL OF OVERDRIVE VOLTAGE
- Publication number 20240233847
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE...
- Publication number 20240237344
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
Information Patent Application
NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY
- Publication number 20240233841
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE
- Publication number 20240233826
- Publication date Jul 11, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY THAT DYNAMICALLY REDUCES THE NUMBER OF BITS OF...
- Publication number 20240220130
- Publication date Jul 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH HOLE PRE-CHARGE AND ISOLATED SIGNAL LINES
- Publication number 20240203506
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR SMART VERIFY WITH ADAPTIVE VOLTAGE OFFSET
- Publication number 20240203512
- Publication date Jun 20, 2024
- SANDISK TECHNOLOGIES LLC
- Longju Liu
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAM-VERIFY WITH ADAPTIVE SENSE TIME BASED ON ROW LOCATION
- Publication number 20240194277
- Publication date Jun 13, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY
- Publication number 20240177788
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G11 - INFORMATION STORAGE
Information Patent Application
EARLY PROGRAM TERMINATION WITH ADAPTIVE TEMPERATURE COMPENSATION
- Publication number 20240168661
- Publication date May 23, 2024
- SANDISK TECHNOLOGIES LLC
- Sarath Puthenthermadam
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY
- Publication number 20240136001
- Publication date Apr 25, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM PULSE DURATION INCREASE FOR NAND PROGRAM FAILURE
- Publication number 20240127891
- Publication date Apr 18, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SUB-PLANES HAVING INDIVIDUALLY BIASABLE SO...
- Publication number 20240105262
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely Said
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY WITH PROGRAMMABLE RESISTANCE NON-DATA WORD LINE
- Publication number 20240103742
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Towhidur Razzak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...
- Publication number 20240105622
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...
- Publication number 20240105623
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Ramy Nashed Bassely SAID
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND STRING READ VOLTAGE ADJUSTMENT
- Publication number 20240086074
- Publication date Mar 14, 2024
- SANDISK TECHNOLOGIES LLC
- Yi Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...
- Publication number 20240071544
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE

Jiahui Yuan

Person

Patents Grantslast 30 patents

Three-dimensional memory device including an isolation-trench etch...

Non-volatile memory with optimized operation sequence

Non-volatile memory with tuning of erase process

Early detection of programming failure for non-volatile memory

Non-volatile memory with adapting erase process

Non-volatile memory with zoned control for limiting programming for...

NAND string read voltage adjustment

Non-volatile memory with suspension period during programming

Non-volatile memory with programmable resistance non-data word line

Non-volatile memory with differential temperature compensation for...

Non-volatile memory with zone based program speed adjustment

Memory apparatus and method of operation using state dependent stro...

Low power mode with read sequence adjustment

Soft erase process during programming of non-volatile memory

NAND memory with different pass voltage ramp rates for binary and m...

Non-volatile memory with narrow and shallow erase

Word line zone dependent pre-charge voltage

Non-volatile memory with data refresh based on data states of adjac...

Verify techniques for current reduction in a memory device

Stress test for grown bad blocks

Balancing peak power with programming speed in non-volatile memory

Memory cell group read with compensation for different programming...

Dummy cell resistance tuning in NAND strings

Non-volatile memory with differential temperature compensation for...

Controlling bit line pre-charge voltage separately for multi-level...

Loop dependent word line ramp start time for program verify of mult...

Non-volatile memory with staggered ramp down at the end of pre-char...

Non-volatile memory with adjusted bit line voltage during verify

Non-volatile memory with reverse state program

Non-volatile memory with updating of read compare voltages based on...

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY WITH DECLINE STATE OPERATION

PROGRAM VERIFY WORD LINE RAMPING DELAY FOR LOWER CURRENT CONSUMPTIO...

ERASE SATURATION MITIGATION IN NON-VOLATILE MEMORY

MULTI-STEP READ PASS VOLTAGE DISCHARGE FOR ICC REDUCTION

SEPARATE PEAK CURRENT CHECKPOINTS FOR CLOSED AND OPEN BLOCK READ IC...

NON-VOLATILE MEMORY WITH SECURE ERASE

NON-VOLATILE MEMORY WITH ADAPTING ERASE PROCESS

INDEPENDENT PLANE CONCURRENT MEMORY OPERATION IN NON-VOLATILE MEMOR...

OPEN BLOCK READ ICC REDUCTION

FAST LOOK NEIGHBOR AHEAD FOR DATA RECOVERY

VARIABLE READ METHOD FOR READ TIME PERFORMANCE IMPROVEMENT OF NON-V...

APPARATUS AND METHOD FOR SELECTIVELY REDUCING CHARGE PUMP SPEED DUR...

NON-VOLATILE MEMORY WITH SMART CONTROL OF OVERDRIVE VOLTAGE

THREE-DIMENSIONAL MEMORY DEVICE WITH REDUCED NEIGHBORING WORD LINE...

NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY

NON-VOLATILE MEMORY WTH LOOP DEPENDANT RAMP-UP RATE

NON-VOLATILE MEMORY THAT DYNAMICALLY REDUCES THE NUMBER OF BITS OF...

NON-VOLATILE MEMORY WITH HOLE PRE-CHARGE AND ISOLATED SIGNAL LINES

APPARATUS AND METHODS FOR SMART VERIFY WITH ADAPTIVE VOLTAGE OFFSET

MEMORY PROGRAM-VERIFY WITH ADAPTIVE SENSE TIME BASED ON ROW LOCATION

ADAPTIVE ERASE VOLTAGES FOR NON-VOLATILE MEMORY

EARLY PROGRAM TERMINATION WITH ADAPTIVE TEMPERATURE COMPENSATION

NON-VOLATILE MEMORY WITH LOWER CURRENT PROGRAM-VERIFY

PROGRAM PULSE DURATION INCREASE FOR NAND PROGRAM FAILURE

NON-VOLATILE MEMORY WITH SUB-PLANES HAVING INDIVIDUALLY BIASABLE SO...

NON-VOLATILE MEMORY WITH PROGRAMMABLE RESISTANCE NON-DATA WORD LINE

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE LINE ISOLATION AND METH...

NAND STRING READ VOLTAGE ADJUSTMENT

NAND MEMORY WITH DIFFERENT PASS VOLTAGE RAMP RATES FOR BINARY AND M...