Jiang-He Xie

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
High Electron Mobility Transistor (HEMT) with a back barrier layer
- Patent number 11,855,199
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ling Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for controlling dopant diffusion and activation
- Patent number 11,843,042
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain relief trenches for epitaxial growth
- Patent number 11,804,374
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chuan Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor arrangement formation
- Patent number 11,721,541
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Ting-Jui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for controlling dopant diffusion and activation
- Patent number 11,121,230
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ching-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20240088284
- Publication date Mar 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20240079486
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Wei-Ting CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING
- Publication number 20230387282
- Publication date Nov 30, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Pravanshu Mohanta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH
- Publication number 20230377881
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Chuan LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20220384630
- Publication date Dec 1, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT FORMATION
- Publication number 20220285148
- Publication date Sep 8, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Ting-Jui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20220140123
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co, Ltd.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH
- Publication number 20220130670
- Publication date Apr 28, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Yi-Chuan LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR CONTROLLING DOPANT DIFFUSION AND ACTIVATION
- Publication number 20210376118
- Publication date Dec 2, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Ching-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for the prevention of arcing in a CVD-TiN chamber
- Publication number 20050133165
- Publication date Jun 23, 2005
- Taiwan Semiconductor Manufacturing Co.
- Kuang-Hsing Liu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Jiang-He Xie

Person

Patents Grantslast 30 patents

High Electron Mobility Transistor (HEMT) with a back barrier layer

Structures and methods for controlling dopant diffusion and activation

Strain relief trenches for epitaxial growth

Semiconductor arrangement formation

Structures and methods for controlling dopant diffusion and activation

Patents Applicationslast 30 patents

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING

STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

SEMICONDUCTOR ARRANGEMENT FORMATION

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

STRAIN RELIEF TRENCHES FOR EPITAXIAL GROWTH

STRUCTURES AND METHODS FOR CONTROLLING DOPANT DIFFUSION AND ACTIVATION

Apparatus for the prevention of arcing in a CVD-TiN chamber