Jianming LIU

Person

Xiamen, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor device and method for preparing the same
- Patent number 10,727,054
- Issue date Jul 28, 2020
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Xueliang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and fabrication method therof
- Patent number 10,665,748
- Issue date May 26, 2020
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and fabrication method thereof
- Patent number 10,263,147
- Issue date Apr 16, 2019
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and fabrication method thereof
- Patent number 10,199,538
- Issue date Feb 5, 2019
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip-chip light emitting device and fabrication method
- Patent number 10,186,637
- Issue date Jan 22, 2019
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Zhibai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode and fabrication method thereof
- Patent number 10,043,944
- Issue date Aug 7, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL SUBSTRATE STRUCTURE, LIGHT EMITTING DIODE CHIP INCLUDING...
- Publication number 20220344538
- Publication date Oct 27, 2022
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Jianming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING THE SAME
- Publication number 20190304781
- Publication date Oct 3, 2019
- XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Xueliang ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Fabrication Method Thereof
- Publication number 20180138358
- Publication date May 17, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Jie ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Fabrication Method Thereof
- Publication number 20180138364
- Publication date May 17, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Jie ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Fabrication Method Thereof
- Publication number 20180122988
- Publication date May 3, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Fabrication Method Thereof
- Publication number 20180026156
- Publication date Jan 25, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Jie Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light Emitting Diode and Fabrication Method Thereof
- Publication number 20180013033
- Publication date Jan 11, 2018
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Xueliang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flip-chip Light Emitting Device and Fabrication Method
- Publication number 20170133557
- Publication date May 11, 2017
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- Zhibai ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure and Growth Method of Group-III Nitrides
- Publication number 20160153119
- Publication date Jun 2, 2016
- XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD
- YANHAO DU
- C30 - CRYSTAL GROWTH

Jianming LIU

Person

Patents Grantslast 30 patents

Nitride-based semiconductor device and method for preparing the same

Light emitting diode and fabrication method therof

Light emitting diode and fabrication method thereof

Light emitting diode and fabrication method thereof

Flip-chip light emitting device and fabrication method

Light emitting diode and fabrication method thereof

Patents Applicationslast 30 patents

EPITAXIAL SUBSTRATE STRUCTURE, LIGHT EMITTING DIODE CHIP INCLUDING...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING THE SAME

Light Emitting Diode and Fabrication Method Thereof

Light Emitting Diode and Fabrication Method Thereof

Light Emitting Diode and Fabrication Method Thereof

Light Emitting Diode and Fabrication Method Thereof

Light Emitting Diode and Fabrication Method Thereof

Flip-chip Light Emitting Device and Fabrication Method

Epitaxial Structure and Growth Method of Group-III Nitrides