Jianwei PENG

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Carbon implantation for thicker gate silicide
- Patent number 12,020,937
- Issue date Jun 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with self-aligned asymmetric spacer
- Patent number 11,935,928
- Issue date Mar 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator field effect transistor with performance...
- Patent number 11,810,951
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with shared well
- Patent number 11,798,948
- Issue date Oct 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Kaustubh Shanbhag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with diffusion blocking spacer sections
- Patent number 11,101,364
- Issue date Aug 24, 2021
- GLOBALFOUNDRIES U.S. INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion breaks formed with liner protection for source and...
- Patent number 10,784,342
- Issue date Sep 22, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer integration scheme for FNET and PFET devices
- Patent number 10,468,310
- Issue date Nov 5, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused contact extension dopants in a transistor device
- Patent number 10,453,754
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitors with enlarged contact areas
- Patent number 10,446,483
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 10,431,665
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple gate length device with self-aligned top junction
- Patent number 10,410,929
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-curvature cavity for epitaxial semiconductor growth
- Patent number 10,297,675
- Issue date May 21, 2019
- GLOBALFOUNDRIES Inc.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a vertical field effect transistor (VFET) and a V...
- Patent number 10,276,689
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boundary spacer structure and integration
- Patent number 10,262,903
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vertical field effect transistors with different...
- Patent number 10,249,538
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned junction structures
- Patent number 10,224,330
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-transport field-effect transistors with an etched-through...
- Patent number 10,211,317
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epi semiconductor material on a thinned fin in t...
- Patent number 10,121,868
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple Fin heights with dielectric isolation
- Patent number 10,068,810
- Issue date Sep 4, 2018
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 9,947,769
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming EPI semiconductor material on the source/drain r...
- Patent number 9,887,094
- Issue date Feb 6, 2018
- GLOBALFOUNDRIES Inc.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and high epi surface dopant concentration...
- Patent number 9,577,040
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,559,176
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating raised fins using ancillary fin structures
- Patent number 9,490,174
- Issue date Nov 8, 2016
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer spacer used in finFET
- Patent number 9,419,101
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and high EPI surface dopant concentration...
- Patent number 9,406,752
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET conformal junction and abrupt junction with reduced damage m...
- Patent number 9,397,162
- Issue date Jul 19, 2016
- Globalfoundries Inc.
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-phase source/drain/gate spacer-epi formation
- Patent number 9,337,306
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR ARRAYS WITH CONTROLLABLE GATE VOLTAGE
- Publication number 20240194535
- Publication date Jun 13, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Venkatesh P. Gopinath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...
- Publication number 20240063225
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON IMPLANTATION FOR THICKER GATE SILICIDE
- Publication number 20230307238
- Publication date Sep 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER
- Publication number 20230268401
- Publication date Aug 24, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH MULTIPLE SILICIDE LAYERS
- Publication number 20230261088
- Publication date Aug 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...
- Publication number 20230197783
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH SHARED WELL
- Publication number 20230112377
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Kaustubh Shanbhag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS
- Publication number 20200287019
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS
- Publication number 20190221515
- Publication date Jul 18, 2019
- GLOBALFOUNDRIES INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION
- Publication number 20190206743
- Publication date Jul 4, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190181243
- Publication date Jun 13, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
- Publication number 20190131433
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Alina Vinslava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...
- Publication number 20190103319
- Publication date Apr 4, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER
- Publication number 20190081155
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...
- Publication number 20190051735
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOUNDARY SPACER STRUCTURE AND INTEGRATION
- Publication number 20180374759
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES INC.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A VERTICAL FIELD EFFECT TRANSISTOR (VFET) AND A V...
- Publication number 20180358452
- Publication date Dec 13, 2018
- GLOBALFOUNDRIES INC.
- YI QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...
- Publication number 20180323269
- Publication date Nov 8, 2018
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED JUNCTION STRUCTURES
- Publication number 20180204840
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE AND RESULTING STRUCTURE
- Publication number 20180190792
- Publication date Jul 5, 2018
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS
- Publication number 20180151690
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER INTEGRATION SCHEME FOR NFET AND PFET DEVICES
- Publication number 20180114730
- Publication date Apr 26, 2018
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTRODUCING MATERIAL WITH A LOWER ETCH RATE TO FORM A T-SHAPED SDB...
- Publication number 20170278925
- Publication date Sep 28, 2017
- GLOBALFOUNDRIES INC.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160308005
- Publication date Oct 20, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160293718
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...
- Publication number 20160190252
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...
- Publication number 20160190251
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Peijie FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PHASE SOURCE/DRAIN/GATE SPACER-EPI FORMATION
- Publication number 20150380515
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING RAISED FINS USING ANCILLARY FIN STRUCTURES
- Publication number 20150332972
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS

Jianwei PENG

Person

Patents Grantslast 30 patents

Carbon implantation for thicker gate silicide

Bipolar transistor with self-aligned asymmetric spacer

Semiconductor-on-insulator field effect transistor with performance...

Semiconductor structure with shared well

Field-effect transistors with diffusion blocking spacer sections

Single diffusion breaks formed with liner protection for source and...

Spacer integration scheme for FNET and PFET devices

Diffused contact extension dopants in a transistor device

Metal-insulator-metal capacitors with enlarged contact areas

Multiple-layer spacers for field-effect transistors

Multiple gate length device with self-aligned top junction

Dual-curvature cavity for epitaxial semiconductor growth

Method of forming a vertical field effect transistor (VFET) and a V...

Boundary spacer structure and integration

Method of forming vertical field effect transistors with different...

Self-aligned junction structures

Vertical-transport field-effect transistors with an etched-through...

Methods of forming epi semiconductor material on a thinned fin in t...

Multiple Fin heights with dielectric isolation

Multiple-layer spacers for field-effect transistors

Methods of forming EPI semiconductor material on the source/drain r...

FinFET conformal junction and high epi surface dopant concentration...

FinFET conformal junction and abrupt junction with reduced damage m...

Fabricating raised fins using ancillary fin structures

Multi-layer spacer used in finFET

FinFET conformal junction and high EPI surface dopant concentration...

FinFET conformal junction and abrupt junction with reduced damage m...

Multi-phase source/drain/gate spacer-epi formation

Patents Applicationslast 30 patents

TRANSISTOR ARRAYS WITH CONTROLLABLE GATE VOLTAGE

SUBSTRATES OF SEMICONDUCTOR DEVICES HAVING VARYING THICKNESSES OF S...

CARBON IMPLANTATION FOR THICKER GATE SILICIDE

BIPOLAR TRANSISTOR WITH SELF-ALIGNED ASYMMETRIC SPACER

TRANSISTORS WITH MULTIPLE SILICIDE LAYERS

SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR WITH PERFORMANCE...

SEMICONDUCTOR STRUCTURE WITH SHARED WELL

FIELD-EFFECT TRANSISTORS WITH DIFFUSION BLOCKING SPACER SECTIONS

METAL-INSULATOR-METAL CAPACITORS WITH ENLARGED CONTACT AREAS

MULTIPLE GATE LENGTH DEVICE WITH SELF-ALIGNED TOP JUNCTION

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

METHOD OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH DIFFERENT...

NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH AN ETCHED-THROUGH...

BOUNDARY SPACER STRUCTURE AND INTEGRATION

METHOD OF FORMING A VERTICAL FIELD EFFECT TRANSISTOR (VFET) AND A V...

METHODS OF FORMING EPI SEMICONDUCTOR MATERIAL ON A THINNED FIN IN T...

SELF-ALIGNED JUNCTION STRUCTURES

METHOD OF FORMING SEMICONDUCTOR STRUCTURE AND RESULTING STRUCTURE

MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS

SPACER INTEGRATION SCHEME FOR NFET AND PFET DEVICES

INTRODUCING MATERIAL WITH A LOWER ETCH RATE TO FORM A T-SHAPED SDB...

FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...

FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...

FINFET CONFORMAL JUNCTION AND ABRUPT JUNCTION WITH REDUCED DAMAGE M...

FINFET CONFORMAL JUNCTION AND HIGH EPI SURFACE DOPANT CONCENTRATION...

MULTI-PHASE SOURCE/DRAIN/GATE SPACER-EPI FORMATION

FABRICATING RAISED FINS USING ANCILLARY FIN STRUCTURES