Jin Cai

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Nano transistors with source/drain having side contacts to 2-D mate...
- Patent number 12,170,323
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming 3D transistors using 2D Van Der Waals materials
- Patent number 12,009,411
- Issue date Jun 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Kai Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano transistors with source/drain having side contacts to 2-D mate...
- Patent number 11,955,527
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a double-gate carbon nanotube transistor
- Patent number 11,930,696
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method thereof
- Patent number 11,862,243
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric semiconductor device and method
- Patent number 11,855,221
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control circuit, memory system and control method
- Patent number 11,756,645
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric semiconductor device and method
- Patent number 11,522,085
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming 3D transistors using 2D van per waals materials
- Patent number 11,489,064
- Issue date Nov 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sheng-Kai Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method thereof
- Patent number 11,443,803
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 11,387,360
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 11,189,726
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,183,584
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cryogenic integrated circuits
- Patent number 11,183,449
- Issue date Nov 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and multi-level memory cell having ferroelectric stor...
- Patent number 11,145,676
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method thereof
- Patent number 10,847,221
- Issue date Nov 24, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jau-Yi Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 10,707,347
- Issue date Jul 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for FinFET devices
- Patent number 10,312,072
- Issue date Jun 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for FinFET devices
- Patent number 10,163,621
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...
- Publication number 20240429299
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-Channel Transistor Structure with Asymmetric Substrate Contacts
- Publication number 20240387657
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...
- Publication number 20240379800
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240321988
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240290863
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming 3D Transistors Using 2D Van Der WAALS Materials
- Publication number 20240290871
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Kai Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NFET and PFET with Different Fin Numbers in FinFET Based CFET
- Publication number 20240282772
- Publication date Aug 22, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Contacts and Methods of Forming the Same
- Publication number 20240250032
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240234501
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR
- Publication number 20240194756
- Publication date Jun 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Xuan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS
- Publication number 20240120273
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Bo LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Walls for Complementary Field Effect Transistors
- Publication number 20240072052
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED PARASITIC CAPACITANCE AND METH...
- Publication number 20240072046
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230411467
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230387261
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Semiconductor Device and Method
- Publication number 20230387310
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...
- Publication number 20230387235
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF A DOUBLE-GATE CARBON NANOTUBE TRANSISTOR
- Publication number 20230380257
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD
- Publication number 20230360717
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230335617
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mahaveer Sathaiya DHANYAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DISABLED CHANNELS AND METHOD
- Publication number 20230134741
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Xuan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GATE CONTACT ON A LOW-K LINER
- Publication number 20230039440
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Huan JAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D CHANNEL WITH SELF-ALIGNED SOURCE/DRAIN
- Publication number 20230037927
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ting CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric Semiconductor Device and Method
- Publication number 20220367718
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD THEREOF
- Publication number 20220366977
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jau-Yi WU
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD
- Publication number 20220359031
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Win-San Khwa
- G11 - INFORMATION STORAGE
Information Patent Application
Forming 3D Transistors Using 2D Van Der WAALS Materials
- Publication number 20220359736
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Sheng-Kai Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double-Gate Carbon Nanotube Transistor and Fabrication Method
- Publication number 20220302389
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...
- Publication number 20220302315
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-Channel Transistor Structure with Asymmetric Substrate Contacts
- Publication number 20220254890
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nano transistors with source/drain having side contacts to 2-D mate...

Forming 3D transistors using 2D Van Der Waals materials

Nano transistors with source/drain having side contacts to 2-D mate...

Fabrication method of a double-gate carbon nanotube transistor

Memory device and method thereof

Ferroelectric semiconductor device and method

Control circuit, memory system and control method

Ferroelectric semiconductor device and method

Forming 3D transistors using 2D van per waals materials

Memory device and method thereof

Transistor with a negative capacitance and a method of creating the...

Transistor with a negative capacitance and a method of creating the...

Semiconductor device and manufacturing method thereof

Cryogenic integrated circuits

Memory device and multi-level memory cell having ferroelectric stor...

Memory device and method thereof

Transistor with a negative capacitance and a method of creating the...

Structure for FinFET devices

Method and structure for FinFET devices

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING DIFFERENT DEVICES AND METHODS FOR...

2D-Channel Transistor Structure with Asymmetric Substrate Contacts

NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Forming 3D Transistors Using 2D Van Der WAALS Materials

NFET and PFET with Different Fin Numbers in FinFET Based CFET

Transistor Gate Contacts and Methods of Forming the Same

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

VERTICAL SELF ALIGNED GATE ALL AROUND TRANSISTOR

DEVICE WITH GATE-TO-DRAIN VIA AND RELATED METHODS

Dielectric Walls for Complementary Field Effect Transistors

SEMICONDUCTOR STRUCTURE WITH REDUCED PARASITIC CAPACITANCE AND METH...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Ferroelectric Semiconductor Device and Method

NANO TRANSISTORS WITH SOURCE/DRAIN HAVING SIDE CONTACTS TO 2-D MATE...

FABRICATION METHOD OF A DOUBLE-GATE CARBON NANOTUBE TRANSISTOR

CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

FIELD EFFECT TRANSISTOR WITH DISABLED CHANNELS AND METHOD

SEMICONDUCTOR DEVICE HAVING A GATE CONTACT ON A LOW-K LINER

2D CHANNEL WITH SELF-ALIGNED SOURCE/DRAIN

Ferroelectric Semiconductor Device and Method

MEMORY DEVICE AND METHOD THEREOF

CONTROL CIRCUIT, MEMORY SYSTEM AND CONTROL METHOD

Forming 3D Transistors Using 2D Van Der WAALS Materials

Double-Gate Carbon Nanotube Transistor and Fabrication Method

TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...

2D-Channel Transistor Structure with Asymmetric Substrate Contacts