Jin Changming

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
N2 based plasma treatment for enhanced sidewall smoothing and pore...
- Patent number 7,910,936
- Issue date Mar 22, 2011
- Texas Instruments Incorporated
- Sameer Kumar Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufactured by reducing hillock formation in...
- Patent number 7,745,335
- Issue date Jun 29, 2010
- Texas Instruments Incorporated
- Ju-Ai Ruan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved adhesion and reduced blisterin...
- Patent number 7,732,324
- Issue date Jun 8, 2010
- Texas Instruments Incorporated
- Ju-Ai Ruan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N2 based plasma treatment for enhanced sidewall smoothing and pore...
- Patent number 7,476,602
- Issue date Jan 13, 2009
- Texas Instruments Incorporated
- Sameer Kumar Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a conductive layer including a copper lay...
- Patent number 7,187,080
- Issue date Mar 6, 2007
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce silanol and improve barrier properties in low k di...
- Patent number 7,037,823
- Issue date May 2, 2006
- Texas Instruments Incorporated
- Phillip D. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing such semiconduct...
- Patent number 6,911,394
- Issue date Jun 28, 2005
- Texas Instruments Incorporated
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System for improving thermal stability of copper damascene structure
- Patent number 6,903,000
- Issue date Jun 7, 2005
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment of low-k dielectric films
- Patent number 6,838,300
- Issue date Jan 4, 2005
- Texas Instruments Incorporated
- Changming Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectric and method
- Patent number 6,800,547
- Issue date Oct 5, 2004
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous integrated circuit dielectric with decreased surface porosity
- Patent number 6,800,928
- Issue date Oct 5, 2004
- Texas Instruments Incorporated
- Wei William Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectric and method
- Patent number 6,784,121
- Issue date Aug 31, 2004
- Texas Instruments Incorporated
- Changming Jin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming multiple damascene layers
- Patent number 6,723,636
- Issue date Apr 20, 2004
- Texas Instruments Incorporated
- Noel M. Russell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a sacrificial layer to facilitate metallization for small fe...
- Patent number 6,583,053
- Issue date Jun 24, 2003
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon film as an etch hardmask for hard-to-etch materials
- Patent number 6,573,167
- Issue date Jun 3, 2003
- Texas Instruments Incorporated
- Guoqiang Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of fluorinated dielectrics in multi-level metallizations
- Patent number 6,424,040
- Issue date Jul 23, 2002
- Texas Instruments Incorporated
- Somnath S. Nag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectric and method
- Patent number 6,351,039
- Issue date Feb 26, 2002
- Texas Instruments Incorporated
- Changming Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming integrated circuit dielectric by evaporating solv...
- Patent number 6,284,675
- Issue date Sep 4, 2001
- Texas Instruments Incorporated
- Changming Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectric and method
- Patent number 6,265,303
- Issue date Jul 24, 2001
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous dielectric material with improved pore surface properties fo...
- Patent number 6,140,252
- Issue date Oct 31, 2000
- Texas Instruments Incorporated
- Chih-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectrics
- Patent number 6,059,553
- Issue date May 9, 2000
- Texas Instruments Incorporated
- Changming Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit dielectric and method
- Patent number 6,008,540
- Issue date Dec 28, 1999
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porous dielectric material with improved pore surface properties fo...
- Patent number 5,847,443
- Issue date Dec 8, 1998
- Texas Instruments Incorporated
- Chi-Chen Cho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device Having Improved Adhesion and Reduced Blisterin...
- Publication number 20090160059
- Publication date Jun 25, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Ju-Ai Ruan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N2 BASED PLASMA TREATMENT FOR ENHANCED SIDEWALL SMOOTHING AND PORE...
- Publication number 20090115030
- Publication date May 7, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Kumar Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURED BY REDUCING HILLOCK FORMATION IN...
- Publication number 20080150131
- Publication date Jun 26, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Ju-Ai Ruan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N2 based plasma treatment for enhanced sidewall smoothing and pore...
- Publication number 20060172552
- Publication date Aug 3, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Sameer Kumar Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to reduce silanol and improve barrier properties in low K di...
- Publication number 20050233586
- Publication date Oct 20, 2005
- Phillip D. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System for improving thermal stability of copper damascene structure
- Publication number 20050186788
- Publication date Aug 25, 2005
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and methods of manufacturing such semiconduct...
- Publication number 20050048784
- Publication date Mar 3, 2005
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hexamethyldisilazane treatment of low-k dielectric films
- Publication number 20040152296
- Publication date Aug 5, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Phillip D. Matz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemical treatment of low-k dielectric films
- Publication number 20040150012
- Publication date Aug 5, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Changming Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and methods of manufacturing such semiconduct...
- Publication number 20030160332
- Publication date Aug 28, 2003
- Qing-Tang Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System for improving thermal stability of copper damascene structure
- Publication number 20030124828
- Publication date Jul 3, 2003
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of a sacrificial layer to facilitate metallization for small fe...
- Publication number 20020137337
- Publication date Sep 26, 2002
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for depositing silicon dioxide on a substrate surface using...
- Publication number 20020090834
- Publication date Jul 11, 2002
- Wei William Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Using a carbon film as an etch hardmask for hard-to-etch materials
- Publication number 20020037637
- Publication date Mar 28, 2002
- Guoqiang Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit dielectric and method
- Publication number 20020017641
- Publication date Feb 14, 2002
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS

Jin Changming

Person

Patents Grantslast 30 patents

N2 based plasma treatment for enhanced sidewall smoothing and pore...

Semiconductor device manufactured by reducing hillock formation in...

Semiconductor device having improved adhesion and reduced blisterin...

N2 based plasma treatment for enhanced sidewall smoothing and pore...

Semiconductor device with a conductive layer including a copper lay...

Method to reduce silanol and improve barrier properties in low k di...

Semiconductor devices and methods of manufacturing such semiconduct...

System for improving thermal stability of copper damascene structure

Chemical treatment of low-k dielectric films

Integrated circuit dielectric and method

Porous integrated circuit dielectric with decreased surface porosity

Integrated circuit dielectric and method

Methods for forming multiple damascene layers

Use of a sacrificial layer to facilitate metallization for small fe...

Using a carbon film as an etch hardmask for hard-to-etch materials

Integration of fluorinated dielectrics in multi-level metallizations

Integrated circuit dielectric and method

Method of forming integrated circuit dielectric by evaporating solv...

Integrated circuit dielectric and method

Porous dielectric material with improved pore surface properties fo...

Integrated circuit dielectrics

Integrated circuit dielectric and method

Porous dielectric material with improved pore surface properties fo...

Patents Applicationslast 30 patents

Semiconductor Device Having Improved Adhesion and Reduced Blisterin...

N2 BASED PLASMA TREATMENT FOR ENHANCED SIDEWALL SMOOTHING AND PORE...

SEMICONDUCTOR DEVICE MANUFACTURED BY REDUCING HILLOCK FORMATION IN...

N2 based plasma treatment for enhanced sidewall smoothing and pore...

Method to reduce silanol and improve barrier properties in low K di...

System for improving thermal stability of copper damascene structure

Semiconductor devices and methods of manufacturing such semiconduct...

Hexamethyldisilazane treatment of low-k dielectric films

Chemical treatment of low-k dielectric films

Semiconductor devices and methods of manufacturing such semiconduct...

System for improving thermal stability of copper damascene structure

Use of a sacrificial layer to facilitate metallization for small fe...

Method for depositing silicon dioxide on a substrate surface using...

Using a carbon film as an etch hardmask for hard-to-etch materials

Integrated circuit dielectric and method