Claims
- 1. A dielectric structure, comprising:(a) a first layer of porous dielectric with hydrophobic surface; and (b) a second dielectric layer on said porous dielectric; (c) wherein said second dielectric layer is solid and fills at least 50% of the volume of the open pores at the surface of said porous dielectric layer.
- 2. The structure of claim 1, wherein:(a) said second dielectric layer is selected from the group consisting of: hydrogen silsesquioxane, methyl silsesquioxane, and subatmospheric ozone TEOS based CVD.
- 3. The structure of claim 1, further comprising:(a) a layer of non-porous dielectric on said second dielectric layer.
- 4. An integrated circuit, comprising:(a) active devices at a surface of a semiconductor layer; (b) a dielectric structure over said active devices, said structure including: (i) a first layer of porous dielectric with hydrophobic surface; and (ii) a second dielectric layer on said porous dielectric; wherein said second dielectric layer fills at least 50% of the volume of the open pores at the surface of said porous dielectric layer; and (c) conductors within said structure and interconnecting said active devices.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims priority from provisional application Serial No. 60/047,846, filed May 28, 1997.
GOVERNMENT LICENSE
The government may have certain rights in this patent application. NIST contract may cover TI-23611.
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|
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Date |
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|
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May 1967 |
US |