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Jinghong Li
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Poughquag, NY, US
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Patents Grants
last 30 patents
Information
Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
Patent number
9,711,417
Issue date
Jul 18, 2017
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
Patent number
9,711,416
Issue date
Jul 18, 2017
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor structure having a source and a drain with reverse fa...
Patent number
9,673,296
Issue date
Jun 6, 2017
GLOBALFOUNDRIES Inc.
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
Patent number
9,391,171
Issue date
Jul 12, 2016
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET device containing a composite spacer structure
Patent number
9,236,397
Issue date
Jan 12, 2016
GLOBALFOUNDRIES Inc.
Judson R. Holt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor structure having a source and a drain with reverse fa...
Patent number
9,190,471
Issue date
Nov 17, 2015
GlobalFoundries U.S. 2 LLC
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of replacement source/drain for 3D CMOS transistors
Patent number
9,105,741
Issue date
Aug 11, 2015
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Merged fin finFET with (100) sidewall surfaces and method of making...
Patent number
8,946,033
Issue date
Feb 3, 2015
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET devices containing merged epitaxial Fin-containing contact r...
Patent number
8,900,934
Issue date
Dec 2, 2014
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
FinFET devices containing merged epitaxial Fin-containing contact r...
Patent number
8,896,063
Issue date
Nov 25, 2014
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
High-K metal gate device
Patent number
8,853,796
Issue date
Oct 7, 2014
GLOBALFOUNDIERS Singapore Pte. Ltd.
Young Way Teh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Epitaxial growth of silicon doped with carbon and phosphorus using...
Patent number
8,685,845
Issue date
Apr 1, 2014
International Business Machines Corporation
Abhishek Dube
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
Patent number
8,421,191
Issue date
Apr 16, 2013
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
finFETs and methods of making same
Patent number
8,410,544
Issue date
Apr 2, 2013
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Delta monolayer dopants epitaxy for embedded source/drain silicide
Patent number
8,299,535
Issue date
Oct 30, 2012
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Monolayer dopant embedded stressor for advanced CMOS
Patent number
8,236,660
Issue date
Aug 7, 2012
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
finFETS and methods of making same
Patent number
8,043,920
Issue date
Oct 25, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bi-layer nFET embedded stressor element and integration to enhance...
Patent number
8,035,141
Issue date
Oct 11, 2011
International Business Machines Corporation
Kevin K. Chan
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Bottle-shaped trench capacitor with enhanced capacitance
Patent number
8,021,945
Issue date
Sep 20, 2011
International Business Machines Corporation
Xi Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low defect Si:C layer with retrograde carbon profile
Patent number
7,696,000
Issue date
Apr 13, 2010
International Business Machines Corporation
Yaocheng Liu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
N-channel MOSFETs comprising dual stressors, and methods for formin...
Patent number
7,473,608
Issue date
Jan 6, 2009
International Business Machines Corporation
Jinghong H. Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
N-channel MOSFETs comprising dual stressors, and methods for formin...
Patent number
7,279,758
Issue date
Oct 9, 2007
International Business Machines Corporation
Jinghong H. Li
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
Publication number
20160322500
Publication date
Nov 3, 2016
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
Publication number
20160322264
Publication date
Nov 3, 2016
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR STRUCTURE HAVING A SOURCE AND A DRAIN WITH REVERSE FA...
Publication number
20160064523
Publication date
Mar 3, 2016
GLOBALFOUNDRIES INC.
Thomas N. ADAM
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FinFET DEVICE CONTAINING A COMPOSITE SPACER STRUCTURE
Publication number
20150221676
Publication date
Aug 6, 2015
International Business Machines Corporation
Judson R. Holt
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
Publication number
20150214364
Publication date
Jul 30, 2015
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MERGED FIN FINFET WITH (100) SIDEWALL SURFACES AND METHOD OF MAKING...
Publication number
20150102428
Publication date
Apr 16, 2015
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR ATTENUATED FINS
Publication number
20150097217
Publication date
Apr 9, 2015
International Business Machines Corporation
Kangguo Cheng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICES CONTAINING MERGED EPITAXIAL FIN-CONTAINING CONTACT R...
Publication number
20140312419
Publication date
Oct 23, 2014
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FINFET DEVICES CONTAINING MERGED EPITAXIAL FIN-CONTAINING CONTACT R...
Publication number
20140312420
Publication date
Oct 23, 2014
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REPLACEMENT SOURCE/DRAIN FOR 3D CMOS TRANSISTORS
Publication number
20140070316
Publication date
Mar 13, 2014
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MERGED FIN FINFET WITH (100) SIDEWALL SURFACES AND METHOD OF MAKING...
Publication number
20140027863
Publication date
Jan 30, 2014
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR STRUCTURE HAVING A SOURCE AND A DRAIN WITH REVERSE FA...
Publication number
20130270611
Publication date
Oct 17, 2013
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICON CARBON FILM STRUCTURE AND METHOD
Publication number
20130193492
Publication date
Aug 1, 2013
International Business Machines Corporation
THOMAS N. ADAM
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Defect Free Si:C Epitaxial Growth
Publication number
20120305940
Publication date
Dec 6, 2012
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-K METAL GATE DEVICE
Publication number
20120292719
Publication date
Nov 22, 2012
International Business Machines Corporation
Young Way TEH
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
Publication number
20120261717
Publication date
Oct 18, 2012
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING...
Publication number
20120043556
Publication date
Feb 23, 2012
International Business Machines Corporation
Abhishek Dube
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE
Publication number
20110316044
Publication date
Dec 29, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
finFETS AND METHODS OF MAKING SAME
Publication number
20110316081
Publication date
Dec 29, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS
Publication number
20110260213
Publication date
Oct 27, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE...
Publication number
20110095343
Publication date
Apr 28, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
finFETS AND METHODS OF MAKING SAME
Publication number
20110062518
Publication date
Mar 17, 2011
International Business Machines Corporation
Kevin K. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BOTTLE-SHAPED TRENCH CAPACITOR WITH ENHANCED CAPACITANCE
Publication number
20100258904
Publication date
Oct 14, 2010
International Business Machines Corporation
Xi Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
EMBEDDED STRESS ELEMENTS ON SURFACE THIN DIRECT SILICON BOND SUBSTR...
Publication number
20100200896
Publication date
Aug 12, 2010
International Business Machines Corporation
Thomas N. Adam
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICIDE FORMATION FOR eSiGe USING SPACER OVERLAPPING eSiGe AND SIL...
Publication number
20080246056
Publication date
Oct 9, 2008
Victor W. C. Chan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LOW DEFECT SI:C LAYER WITH RETROGRADE CARBON PROFILE
Publication number
20080128806
Publication date
Jun 5, 2008
International Business Machines Corporation
Yaocheng Liu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
N-CHANNEL MOSFETS COMPRISING DUAL STRESSORS, AND METHODS FOR FORMIN...
Publication number
20070281413
Publication date
Dec 6, 2007
International Business Machines Corporation
Jinghong H. Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ION IMPLANTATION OF NITROGEN INTO SEMICONDUCTOR SUBSTRATE PRIOR TO...
Publication number
20070114605
Publication date
May 24, 2007
International Business Machines Corporation
Thomas W. Dyer
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE FORMING METHOD AND STRUCTURE FOR RETARDING DO...
Publication number
20060220112
Publication date
Oct 5, 2006
International Business Machines Corporation
Huilong Zhu
H01 - BASIC ELECTRIC ELEMENTS