Jingyun ZHANG

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal gate patterning for logic and SRAM in nanosheet devices
- Patent number 12,156,395
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state SOT-MRAM structure
- Patent number 12,127,482
- Issue date Oct 22, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three terminal phase change memory with self-aligned contacts
- Patent number 12,108,692
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with ferroelectric region
- Patent number 11,973,141
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized contact resistance for stacked FET devices
- Patent number 11,948,944
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar devices with consistent base dielectric
- Patent number 11,908,743
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Full nanosheet airgap spacer
- Patent number 11,894,442
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure chip identification using random threshold voltage variation...
- Patent number 11,894,444
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-layer STI liner for nanosheet leakage control
- Patent number 11,881,505
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate induced drain leakage reduction in FinFETs
- Patent number 11,855,180
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,842,998
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated channel and gate formation scheme for nanosheet trans...
- Patent number 11,830,877
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor boundary protection using reversible crosslinking reflow
- Patent number 11,810,828
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half buried nFET/pFET epitaxy source/drain strap
- Patent number 11,798,867
- Issue date Oct 24, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid complementary field effect transistor device
- Patent number 11,777,034
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Ruilong Xie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-threshold voltage gate-all-around transistors
- Patent number 11,756,960
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of wrap-around-contact for gate-all-around nanosheet FET
- Patent number 11,756,996
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having source or drain formation assistance regions with...
- Patent number 11,735,480
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet metal-oxide semiconductor field effect transistor with as...
- Patent number 11,735,628
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate stack dipole compensation for threshold voltage definition in...
- Patent number 11,735,593
- Issue date Aug 22, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary FET (CFET) buried sidewall contact with spacer foot
- Patent number 11,710,699
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with isolated and non-isolated epitaxy regi...
- Patent number 11,688,741
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen vacancy passivation in high-k dielectrics for vertical trans...
- Patent number 11,587,837
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Secure chip identification using random threshold voltage variation...
- Patent number 11,575,023
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked resistive memory with individual switch control
- Patent number 11,527,574
- Issue date Dec 13, 2022
- International Business Machines Corporation
- Takashi Ando
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
NEGATIVE CAPACITANCE GATE-ALL-AROUND TRANSISTOR WITH TUNABLE CAPACI...
- Publication number 20250056839
- Publication date Feb 13, 2025
- International Business Machines Corporation
- Reinaldo Vega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20250031440
- Publication date Jan 23, 2025
- International Business Machines Corporation
- Domingo Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION
- Publication number 20250022880
- Publication date Jan 16, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES
- Publication number 20240429277
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER...
- Publication number 20240178284
- Publication date May 30, 2024
- International Business Machines Corporation
- Jennifer Toy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET FIELD EFFECT TRANSISTOR INCLUDING SELF-ALIGNED GATE
- Publication number 20240170331
- Publication date May 23, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...
- Publication number 20240113162
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS
- Publication number 20240097006
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...
- Publication number 20240006467
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...
- Publication number 20230352488
- Publication date Nov 2, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH AS...
- Publication number 20230335588
- Publication date Oct 19, 2023
- International Business Machines Corporation
- Takashi Ando
- B82 - NANO-TECHNOLOGY
Information Patent Application
REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES
- Publication number 20230282728
- Publication date Sep 7, 2023
- International Business Machines Corporation
- JINGYUN Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DIPOLE OF DIFFERENT STRENGTHS IN GATE ALL AROUND TRANSISTOR
- Publication number 20230261074
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING BOTTOM ISOLATION AND EPITAXIAL STRAIN OF FET SOURCE/DRAIN...
- Publication number 20230246067
- Publication date Aug 3, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE
- Publication number 20230197530
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED LOWER SOURCE/DRAIN FOR STACKED FIELD-EFFECT TRANSISTOR
- Publication number 20230197778
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID GATE CUT FOR STACKED TRANSISTORS
- Publication number 20230197814
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES
- Publication number 20230189496
- Publication date Jun 15, 2023
- International Business Machines Corporation
- ChoongHyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...
- Publication number 20230187495
- Publication date Jun 15, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE
- Publication number 20230187508
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...
- Publication number 20230178539
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL
- Publication number 20230178621
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT NANOSHEET DEVICES
- Publication number 20230154798
- Publication date May 18, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...
- Publication number 20230134180
- Publication date May 4, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS HAVING DIFFERENT THRESH...
- Publication number 20230124673
- Publication date Apr 20, 2023
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER
- Publication number 20230110825
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...
- Publication number 20230109345
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Clint Jason Oteri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION
- Publication number 20230099214
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR DEVICES WITH CONSISTENT BASE DIELECTRIC
- Publication number 20230102261
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Jingyun ZHANG

Person

Patents Grantslast 30 patents

Metal gate patterning for logic and SRAM in nanosheet devices

Gate-all-around field-effect transistor having source side lateral...

Multi-state SOT-MRAM structure

Electrostatic discharge diode having dielectric isolation layer

Three terminal phase change memory with self-aligned contacts

Replacement-channel fabrication of III-V nanosheet devices

Nanosheet transistor with ferroelectric region

Optimized contact resistance for stacked FET devices

Planar devices with consistent base dielectric

Co-integrated logic, electrostatic discharge, and well contact devi...

Full nanosheet airgap spacer

Secure chip identification using random threshold voltage variation...

Tri-layer STI liner for nanosheet leakage control

Gate induced drain leakage reduction in FinFETs

Semiconductor device and method of forming the semiconductor device

Co-integrated channel and gate formation scheme for nanosheet trans...

Transistor boundary protection using reversible crosslinking reflow

Half buried nFET/pFET epitaxy source/drain strap

Hybrid complementary field effect transistor device

Multi-threshold voltage gate-all-around transistors

Formation of wrap-around-contact for gate-all-around nanosheet FET

Replacement-channel fabrication of III-V nanosheet devices

Transistor having source or drain formation assistance regions with...

Nanosheet metal-oxide semiconductor field effect transistor with as...

Gate stack dipole compensation for threshold voltage definition in...

Complementary FET (CFET) buried sidewall contact with spacer foot

Gate-all-around devices with isolated and non-isolated epitaxy regi...

Oxygen vacancy passivation in high-k dielectrics for vertical trans...

Secure chip identification using random threshold voltage variation...

Stacked resistive memory with individual switch control

Patents Applicationslast 30 patents

NEGATIVE CAPACITANCE GATE-ALL-AROUND TRANSISTOR WITH TUNABLE CAPACI...

MULTI-SILICIDE STACKED FIELD-EFFECT TRANSISTORS

GATE REDUCTION OR REMOVAL BETWEEN DUAL MIDDLE DIELECTRIC ISOLATION

MULTIPLE GATE DIELECTRICS FOR MONOLITHIC STACKED DEVICES

SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER...

FORKSHEET FIELD EFFECT TRANSISTOR INCLUDING SELF-ALIGNED GATE

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE...

GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS

CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...

GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...

NANOSHEET METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH AS...

REPLACEMENT-CHANNEL FABRICATION OF III-V NANOSHEET DEVICES

MULTIPLE DIPOLE OF DIFFERENT STRENGTHS IN GATE ALL AROUND TRANSISTOR

ENABLING BOTTOM ISOLATION AND EPITAXIAL STRAIN OF FET SOURCE/DRAIN...

SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE

EXTENDED LOWER SOURCE/DRAIN FOR STACKED FIELD-EFFECT TRANSISTOR

HYBRID GATE CUT FOR STACKED TRANSISTORS

METAL GATE PATTERNING FOR LOGIC AND SRAM IN NANOSHEET DEVICES

MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...

SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

MULTI-VT NANOSHEET DEVICES

GATE STACK DIPOLE COMPENSATION FOR THRESHOLD VOLTAGE DEFINITION IN...

VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS HAVING DIFFERENT THRESH...

ELECTROSTATIC DISCHARGE DIODE HAVING DIELECTRIC ISOLATION LAYER

SECURE CHIP IDENTIFICATION USING RANDOM THRESHOLD VOLTAGE VARIATION...

NANOSHEET DEVICE WITH TRI-LAYER BOTTOM DIELECTRIC ISOLATION

PLANAR DEVICES WITH CONSISTENT BASE DIELECTRIC