Jinping Liu

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
IC product comprising an insulating gate separation structure posit...
- Patent number 11,522,068
- Issue date Dec 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising an air gap positioned adjacent a gate electrode
- Patent number 11,456,382
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse formation during a multiple patterning process
- Patent number 11,348,870
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device comprising a single diffusion break with an upper sur...
- Patent number 11,121,023
- Issue date Sep 14, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,964,599
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with large EPI in FinFETs and method of manufacturing
- Patent number 10,910,471
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical fuse formation during a multiple patterning process
- Patent number 10,784,195
- Issue date Sep 22, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor material in trenches having differe...
- Patent number 10,714,376
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method, apparatus and system for improved performance using tall fi...
- Patent number 10,622,463
- Issue date Apr 14, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing finfet devices using narrow and wide gate c...
- Patent number 10,586,860
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple patterning with variable space mandrel cuts
- Patent number 10,566,195
- Issue date Feb 18, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structure
- Patent number 10,559,470
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming replacement air gap
- Patent number 10,535,771
- Issue date Jan 14, 2020
- GLOBALFOUNDRIES Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming single diffusion breaks between finFET devices a...
- Patent number 10,475,693
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,453,936
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned multiple patterning processes with layered mandrels
- Patent number 10,446,395
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-layer spacers for field-effect transistors
- Patent number 10,431,665
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,431,500
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for a semiconductor device comprisin...
- Patent number 10,418,272
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with fins formed by a damascene-like process
- Patent number 10,403,742
- Issue date Sep 3, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate oxide formation through hybrid methods of thermal and depositi...
- Patent number 10,361,289
- Issue date Jul 23, 2019
- GLOBALFOUNDRIES Inc.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active gate contacts and method of fabrication thereof
- Patent number 10,347,541
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for self-aligned metal hard masks
- Patent number 10,340,142
- Issue date Jul 2, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protected trench isolation for fin-type field-effect transistors
- Patent number 10,312,150
- Issue date Jun 4, 2019
- GLOBALFOUNDRIES Inc.
- Fuad Al-Amoody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Common metal contact regions having different Schottky barrier heig...
- Patent number 10,276,683
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Tek Po Rinus Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fins
- Patent number 10,276,374
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable space mandrel cut for self aligned double patterning
- Patent number 10,199,265
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned multiple patterning processes using bi-layer mandrels...
- Patent number 10,192,780
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Xiaohan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for variable fin pitch and critical dimension
- Patent number 10,192,786
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with robust low-k sidewall spacers and method...
- Patent number 10,192,791
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS
- Publication number 20200335435
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING STRESS LINERS USING ATOMIC LAYER DEPOSITION TO F...
- Publication number 20200111704
- Publication date Apr 9, 2020
- GLOBALFOUNDRIES INC.
- Eric S. Kozarksy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING AN AIR GAP POSITIONED ADJACENT A GATE ELECTRODE
- Publication number 20200066899
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING
- Publication number 20200020769
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Jianwei PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED DEPOSITION ZONES FOR ATOMIC LAYER DEPOSITION
- Publication number 20200002813
- Publication date Jan 2, 2020
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...
- Publication number 20190393077
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING REPLACEMENT AIR GAP
- Publication number 20190393335
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE COMPRISING A SINGLE DIFFUSION BREAK WITH AN UPPER SUR...
- Publication number 20190378751
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...
- Publication number 20190355832
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR A SEMICONDUCTOR DEVICE COMPRISIN...
- Publication number 20190355615
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES, Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190355624
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...
- Publication number 20190341475
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS
- Publication number 20190326209
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED MULTIPLE PATTERNING PROCESSES WITH LAYERED MANDRELS
- Publication number 20190318931
- Publication date Oct 17, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190304843
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...
- Publication number 20190305105
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Qun GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190273148
- Publication date Sep 5, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING STRUCTURE
- Publication number 20190228976
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131429
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
- Publication number 20190097019
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Wei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING FINS
- Publication number 20190088478
- Publication date Mar 21, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE PATTERNING WITH VARIABLE SPACE MANDREL CUTS
- Publication number 20190067010
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FI...
- Publication number 20190043965
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION (STI) GAP FILL
- Publication number 20190027556
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20180350607
- Publication date Dec 6, 2018
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR VARIABLE FIN PITCH AND CRITICAL DIMENSION
- Publication number 20180330994
- Publication date Nov 15, 2018
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED PARASITIC RESISTANCES AND METHOD
- Publication number 20180247936
- Publication date Aug 30, 2018
- GLOBALFOUNDRIES INC.
- SHISHIR K. RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE SPACE MANDREL CUT FOR SELF ALIGNED DOUBLE PATTERNING
- Publication number 20180233404
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS
- Publication number 20180151690
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Tao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF BAND-EDGE CONTACTS
- Publication number 20180138177
- Publication date May 17, 2018
- GLOBALFOUNDRIES INC.
- Tek Po Rinus LEE
- H01 - BASIC ELECTRIC ELEMENTS

Jinping Liu

Person

Patents Grantslast 30 patents

IC product comprising an insulating gate separation structure posit...

Transistor comprising an air gap positioned adjacent a gate electrode

Electrical fuse formation during a multiple patterning process

FinFET device comprising a single diffusion break with an upper sur...

Multi-step insulator formation in trenches to avoid seams in insula...

Device with large EPI in FinFETs and method of manufacturing

Electrical fuse formation during a multiple patterning process

Method of forming semiconductor material in trenches having differe...

Method, apparatus and system for improved performance using tall fi...

Method of manufacturing finfet devices using narrow and wide gate c...

Multiple patterning with variable space mandrel cuts

Capping structure

Method for forming replacement air gap

Method for forming single diffusion breaks between finFET devices a...

Methods of forming replacement gate structures on transistor devices

Self-aligned multiple patterning processes with layered mandrels

Multiple-layer spacers for field-effect transistors

Multi-step insulator formation in trenches to avoid seams in insula...

Methods, apparatus, and system for a semiconductor device comprisin...

Field-effect transistors with fins formed by a damascene-like process

Gate oxide formation through hybrid methods of thermal and depositi...

Active gate contacts and method of fabrication thereof

Methods, apparatus and system for self-aligned metal hard masks

Protected trench isolation for fin-type field-effect transistors

Common metal contact regions having different Schottky barrier heig...

Methods for forming fins

Variable space mandrel cut for self aligned double patterning

Self-aligned multiple patterning processes using bi-layer mandrels...

Process for variable fin pitch and critical dimension

Semiconductor devices with robust low-k sidewall spacers and method...

Patents Applicationslast 30 patents

ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS

METHODS OF FORMING STRESS LINERS USING ATOMIC LAYER DEPOSITION TO F...

TRANSISTOR COMPRISING AN AIR GAP POSITIONED ADJACENT A GATE ELECTRODE

DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING

ISOLATED DEPOSITION ZONES FOR ATOMIC LAYER DEPOSITION

METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...

METHOD FOR FORMING REPLACEMENT AIR GAP

FINFET DEVICE COMPRISING A SINGLE DIFFUSION BREAK WITH AN UPPER SUR...

IC PRODUCT COMPRISING AN INSULATING GATE SEPARATION STRUCTURE POSIT...

METHODS, APPARATUS, AND SYSTEM FOR A SEMICONDUCTOR DEVICE COMPRISIN...

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...

ELECTRICAL FUSE FORMATION DURING A MULTIPLE PATTERNING PROCESS

SELF-ALIGNED MULTIPLE PATTERNING PROCESSES WITH LAYERED MANDRELS

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

GATE SKIRT OXIDATION FOR IMPROVED FINFET PERFORMANCE AND METHOD FOR...

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

CAPPING STRUCTURE

METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES

FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS

METHODS FOR FORMING FINS

MULTIPLE PATTERNING WITH VARIABLE SPACE MANDREL CUTS

METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FI...

SHALLOW TRENCH ISOLATION (STI) GAP FILL

SEMICONDUCTOR STRUCTURE

PROCESS FOR VARIABLE FIN PITCH AND CRITICAL DIMENSION

FIELD EFFECT TRANSISTORS WITH REDUCED PARASITIC RESISTANCES AND METHOD

VARIABLE SPACE MANDREL CUT FOR SELF ALIGNED DOUBLE PATTERNING

MULTIPLE-LAYER SPACERS FOR FIELD-EFFECT TRANSISTORS

FORMATION OF BAND-EDGE CONTACTS