Jitendra Kumar JHA

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures including a titanium silicide material
- Patent number 12,046,654
- Issue date Jul 23, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20240332392
- Publication date Oct 3, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...
- Publication number 20230197804
- Publication date Jun 22, 2023
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...
- Publication number 20220416039
- Publication date Dec 29, 2022
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...
- Publication number 20220416032
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena Nandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL CONTACT PROCESS WITH SELECTIVE DEPOSITION
- Publication number 20220102506
- Publication date Mar 31, 2022
- Intel Corporation
- Kevin COOK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...
- Publication number 20220102521
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20210408258
- Publication date Dec 30, 2021
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT
- Publication number 20210407902
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS

Jitendra Kumar JHA

Person

Patents Grantslast 30 patents

Low resistance approaches for fabricating contacts and the resultin...

Integrated circuit structures including a titanium silicide material

Halogen treatment for NMOS contact resistance improvement

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM THRESH...

CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...

DUAL CONTACT PROCESS WITH SELECTIVE DEPOSITION

LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT