Jo-won Lee

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method and device for sending and receiving a reference signal
- Patent number 9,106,377
- Issue date Aug 11, 2015
- Samsung Electronics Co., Ltd.
- Hyoung-Ju Ji
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Non-volatile memory device including metal-insulator transition mat...
- Patent number 8,237,214
- Issue date Aug 7, 2012
- Samsung Electronics Co., Ltd.
- Wan-jun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of erasing a memory device including complementary nonvolati...
- Patent number 8,139,387
- Issue date Mar 20, 2012
- Samsung Electronics Co., Ltd.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit non-volatile memory device, method of operating the same,...
- Patent number 7,759,196
- Issue date Jul 20, 2010
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of operating and manufacturing logic device and semiconduct...
- Patent number 7,719,871
- Issue date May 18, 2010
- Samsung Electronics Co., Ltd.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
CMOS thin film transistor comprising common gate, logic device comp...
- Patent number 7,432,554
- Issue date Oct 7, 2008
- Samsung Electronics Co., Ltd.
- Moon-Kyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory device having side gate stacks and method of manufactu...
- Patent number 7,374,991
- Issue date May 20, 2008
- Samsung Electronics Co., Ltd.
- Won-il Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary nonvolatile memory device
- Patent number 7,345,898
- Issue date Mar 18, 2008
- Samsung Electronics Co., Ltd.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and metho...
- Patent number 7,202,521
- Issue date Apr 10, 2007
- Samsung Electronics Co., Ltd.
- Moon-kyung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
SONOS memory device
- Patent number 7,187,030
- Issue date Mar 6, 2007
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Grant
Rewritable data storage using carbonaceous material and writing/rea...
- Patent number 7,020,064
- Issue date Mar 28, 2006
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
SONOS memory device having side gate stacks and method of manufactu...
- Patent number 6,946,703
- Issue date Sep 20, 2005
- Samsung Electronics Co., Ltd.
- Won-il Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device utilizing a vertical nanotube
- Patent number 6,930,343
- Issue date Aug 16, 2005
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Patent number 6,855,603
- Issue date Feb 15, 2005
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Patent number 6,833,567
- Issue date Dec 21, 2004
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Patent number 6,815,294
- Issue date Nov 9, 2004
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-value single electron memory using double-quantum dot and dri...
- Patent number 6,597,036
- Issue date Jul 22, 2003
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Patent number 6,566,704
- Issue date May 20, 2003
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Single electron transistor using porous silicon and manufacturing m...
- Patent number 6,479,365
- Issue date Nov 12, 2002
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor using porous silicon
- Patent number 6,414,333
- Issue date Jul 2, 2002
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MNOS-type memory using single electron transistor and driving metho...
- Patent number 6,313,503
- Issue date Nov 6, 2001
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication method of single electron tunneling device
- Patent number 6,268,273
- Issue date Jul 31, 2001
- Samsung Electronics Co., Ltd.
- Byong-man Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Large capacity disk and method for manufacturing the same
- Patent number 6,180,202
- Issue date Jan 30, 2001
- Samsung Electronics Co., Ltd.
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing a magnetic head
- Patent number 5,815,910
- Issue date Oct 6, 1998
- Samsung Electronics Co., Ltd.
- Young-soo Park
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND DEVICE FOR SENDING AND RECEIVING A REFERENCE SIGNAL
- Publication number 20140286263
- Publication date Sep 25, 2014
- Samsung Electronics Co., Ltd.
- Hyoung-Ju Ji
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Method of erasing device including complementary nonvolatile memory...
- Publication number 20100296347
- Publication date Nov 25, 2010
- Samsung Electronics Co., Ltd.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-BIT NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME,...
- Publication number 20090010058
- Publication date Jan 8, 2009
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF OPERATING AND MANUFACTURING LOGIC DEVICE AND SEMICONDUCT...
- Publication number 20080212376
- Publication date Sep 4, 2008
- Samsung Electronics Co., Ltd.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Application
Non-volatile memory device including metal-insulator transition mat...
- Publication number 20080157186
- Publication date Jul 3, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Wan-jun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of erasing data from SONOS memory device
- Publication number 20070138541
- Publication date Jun 21, 2007
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS memory device having side gate stacks and method of manufactu...
- Publication number 20060180853
- Publication date Aug 17, 2006
- Samsung Electronics Co., Ltd.
- Won-il Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS thin film transistor comprising common gate, logic device comp...
- Publication number 20060131653
- Publication date Jun 22, 2006
- Moon-Kyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-bit non-volatile memory device, method of operating the same,...
- Publication number 20060108629
- Publication date May 25, 2006
- Samsung Electronics Co., Ltd.
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Application
Complementary nonvolatile memory device, methods of operating and m...
- Publication number 20050286287
- Publication date Dec 29, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Yoon-dong Park
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory and manufacturing method thereof
- Publication number 20050173766
- Publication date Aug 11, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Hee-soon Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and metho...
- Publication number 20050112815
- Publication date May 26, 2005
- SAMSUNG ELECTRONICS CO., LTD.
- Moon-kyung Kim
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS memory device and method of erasing data from the same
- Publication number 20040251490
- Publication date Dec 16, 2004
- Soo-doo Chae
- G11 - INFORMATION STORAGE
Information Patent Application
SONOS memory device having side gate stacks and method of manufactu...
- Publication number 20040207002
- Publication date Oct 21, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Won-il Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile memory device utilizing a vertical nanotube
- Publication number 20040095837
- Publication date May 20, 2004
- Won-Bong Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Publication number 20030230760
- Publication date Dec 18, 2003
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Publication number 20030230782
- Publication date Dec 18, 2003
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Publication number 20030227015
- Publication date Dec 11, 2003
- Samsung Electronics Co., Ltd.
- Won-bong Choi
- G11 - INFORMATION STORAGE
Information Patent Application
Single electron transistor using porous silicon and manufacturing m...
- Publication number 20020088969
- Publication date Jul 11, 2002
- Jo-won Lee
- B82 - NANO-TECHNOLOGY
Information Patent Application
Rewritable data storage using carbonaceous material and writing/rea...
- Publication number 20020009632
- Publication date Jan 24, 2002
- SAMSUNG ELECTRONICS CO., LTD.
- Byong-man Kim
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical nano-size transistor using carbon nanotubes and manufactur...
- Publication number 20020001905
- Publication date Jan 3, 2002
- Won-bong Choi
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Method and device for sending and receiving a reference signal

Non-volatile memory device including metal-insulator transition mat...

Method of erasing a memory device including complementary nonvolati...

Multi-bit non-volatile memory device, method of operating the same,...

Methods of operating and manufacturing logic device and semiconduct...

CMOS thin film transistor comprising common gate, logic device comp...

SONOS memory device having side gate stacks and method of manufactu...

Complementary nonvolatile memory device

Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and metho...

SONOS memory device

Rewritable data storage using carbonaceous material and writing/rea...

SONOS memory device having side gate stacks and method of manufactu...

Nonvolatile memory device utilizing a vertical nanotube

Vertical nano-size transistor using carbon nanotubes and manufactur...

Vertical nano-size transistor using carbon nanotubes and manufactur...

Vertical nano-size transistor using carbon nanotubes and manufactur...

Multi-value single electron memory using double-quantum dot and dri...

Vertical nano-size transistor using carbon nanotubes and manufactur...

Single electron transistor using porous silicon and manufacturing m...

Single electron transistor using porous silicon

MNOS-type memory using single electron transistor and driving metho...

Fabrication method of single electron tunneling device

Large capacity disk and method for manufacturing the same

Method for manufacturing a magnetic head

Patents Applicationslast 30 patents

METHOD AND DEVICE FOR SENDING AND RECEIVING A REFERENCE SIGNAL

Method of erasing device including complementary nonvolatile memory...

MULTI-BIT NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME,...

METHODS OF OPERATING AND MANUFACTURING LOGIC DEVICE AND SEMICONDUCT...

Non-volatile memory device including metal-insulator transition mat...

Method of erasing data from SONOS memory device

SONOS memory device having side gate stacks and method of manufactu...

CMOS thin film transistor comprising common gate, logic device comp...

Multi-bit non-volatile memory device, method of operating the same,...

Complementary nonvolatile memory device, methods of operating and m...

Semiconductor memory and manufacturing method thereof

Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and metho...

SONOS memory device and method of erasing data from the same

SONOS memory device having side gate stacks and method of manufactu...

Nonvolatile memory device utilizing a vertical nanotube

Vertical nano-size transistor using carbon nanotubes and manufactur...

Vertical nano-size transistor using carbon nanotubes and manufactur...

Vertical nano-size transistor using carbon nanotubes and manufactur...

Single electron transistor using porous silicon and manufacturing m...

Rewritable data storage using carbonaceous material and writing/rea...

Vertical nano-size transistor using carbon nanotubes and manufactur...