Jodi Mari Iwata

Person

San Carlos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 12,167,699
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 11,956,971
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,849,646
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,758,820
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,683,994
- Issue date Jun 20, 2023
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT) magnetoresisti...
- Patent number 11,417,835
- Issue date Aug 16, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 11,316,098
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,264,566
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 11,024,798
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,957,851
- Issue date Mar 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride diffusion barrier structure for spintronic applications
- Patent number 10,950,782
- Issue date Mar 16, 2021
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...
- Patent number 10,784,310
- Issue date Sep 22, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride capping layer for spin torque transfer (STT)-magnetoresisti...
- Patent number 10,665,773
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic layer for magnetic random access memory (MRAM) by moment e...
- Patent number 10,522,752
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High thermal stability by doping of oxide capping layer for spin to...
- Patent number 10,522,744
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective passivation layer for magnetic tunnel junctions
- Patent number 10,439,132
- Issue date Oct 8, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jodi Mari Iwata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,431,736
- Issue date Oct 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MgO insertion into free layer for magnetic memory applications
- Patent number 10,193,062
- Issue date Jan 29, 2019
- Headway Technologies, Inc.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,014,465
- Issue date Jul 3, 2018
- Headway Technologies, Inc.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MgO insertion into free layer for magnetic memory applications
- Patent number 9,966,529
- Issue date May 8, 2018
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20240381779
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G11 - INFORMATION STORAGE
Information Patent Application
PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS
- Publication number 20230371395
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20220384716
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20220246841
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20220149272
- Publication date May 12, 2022
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Protective Passivation Layer for Magnetic Tunnel Junctions
- Publication number 20210293912
- Publication date Sep 23, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20210210680
- Publication date Jul 8, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20210013260
- Publication date Jan 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20200403149
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...
- Publication number 20200279993
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20200266334
- Publication date Aug 20, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...
- Publication number 20200152698
- Publication date May 14, 2020
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...
- Publication number 20200144494
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20200144486
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protective Passivation Layer for Magnetic Tunnel Junctions
- Publication number 20200035912
- Publication date Jan 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...
- Publication number 20190237661
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
High Thermal Stability by Doping of Oxide Capping Layer for Spin To...
- Publication number 20190109277
- Publication date Apr 11, 2019
- HEADWAY TECHNOLOGIES, INC.
- Guenole Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20180323371
- Publication date Nov 8, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MgO Insertion into Free Layer for Magnetic Memory Applications
- Publication number 20180269387
- Publication date Sep 20, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protective Passivation Layer for Magnetic Tunnel Junctions
- Publication number 20180269385
- Publication date Sep 20, 2018
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20170256703
- Publication date Sep 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Jodi Mari Iwata

Person

Patents Grantslast 30 patents

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

Protective passivation layer for magnetic tunnel junctions

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Maintaining coercive field after high temperature anneal for magnet...

Nitride capping layer for spin torque transfer (STT) magnetoresisti...

High thermal stability by doping of oxide capping layer for spin to...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Minimal thickness, low switching voltage magnetic free layers using...

Protective passivation layer for magnetic tunnel junctions

Magnetic layer for magnetic random access memory (MRAM) by moment e...

Nitride diffusion barrier structure for spintronic applications

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of...

Nitride capping layer for spin torque transfer (STT)-magnetoresisti...

Maintaining coercive field after high temperature anneal for magnet...

Magnetic layer for magnetic random access memory (MRAM) by moment e...

High thermal stability by doping of oxide capping layer for spin to...

Protective passivation layer for magnetic tunnel junctions

Maintaining coercive field after high temperature anneal for magnet...

MgO insertion into free layer for magnetic memory applications

Multilayer structure for reducing film roughness in magnetic devices

Maintaining coercive field after high temperature anneal for magnet...

MgO insertion into free layer for magnetic memory applications

Patents Applicationslast 30 patents

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

PROTECTIVE PASSIVATION LAYER FOR MAGNETIC TUNNEL JUNCTIONS

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Protective Passivation Layer for Magnetic Tunnel Junctions

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

Nitride Diffusion Barrier Structure for Spintronic Applications

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer For Spin Torque Transfer (STT) Magnetoresisti...

Nitride Diffusion Barrier Structure for Spintronic Applications

Cooling for PMA (Perpendicular Magnetic Anisotropy) Enhancement of...

Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment E...

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Protective Passivation Layer for Magnetic Tunnel Junctions

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresisti...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

High Thermal Stability by Doping of Oxide Capping Layer for Spin To...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

MgO Insertion into Free Layer for Magnetic Memory Applications

Protective Passivation Layer for Magnetic Tunnel Junctions

Multilayer Structure for Reducing Film Roughness in Magnetic Devices