Joerg Hohage

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Technique for forming a passivation layer without a terminal metal
- Patent number 8,841,140
- Issue date Sep 23, 2014
- Advanced Micro Devices, Inc.
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of reactive metal surfaces of semiconductor devices duri...
- Patent number 8,828,888
- Issue date Sep 9, 2014
- GLOBALFOUNDRIES Inc.
- Matthias Lehr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressive stress transfer in an interlayer dielectric of a semico...
- Patent number 8,759,232
- Issue date Jun 24, 2014
- GLOBALFOUNDRIES Inc.
- Joerg Hohage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 8,546,274
- Issue date Oct 1, 2013
- GLOBALFOUNDRIES Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-insulating stressed material layers in a contact level of semic...
- Patent number 8,450,172
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress engineering in a contact level of semiconductor devices by s...
- Patent number 8,338,284
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dielectric cap layer for a copper metallization...
- Patent number 8,211,795
- Issue date Jul 3, 2012
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Providing superior electromigration performance and reducing deteri...
- Patent number 8,153,524
- Issue date Apr 10, 2012
- Advanced Micro Devices, Inc.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced wafer warpage in semiconductors by stress engineering in th...
- Patent number 8,053,354
- Issue date Nov 8, 2011
- GLOBALFOUNDRIES Inc.
- Matthias Lehr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 8,034,726
- Issue date Oct 11, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress transfer by sequentially providing a highly stressed etch st...
- Patent number 7,994,072
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced stress transfer in an interlayer dielectric by using an ad...
- Patent number 7,994,059
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arc layer having a reduced flaking tendency and a method of manufac...
- Patent number 7,938,973
- Issue date May 10, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress transfer in an interlayer dielectric by providing a stressed...
- Patent number 7,906,383
- Issue date Mar 15, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interlayer dielectric material in a semiconductor device comprising...
- Patent number 7,875,561
- Issue date Jan 25, 2011
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for a metallization layer with enhanced adhesion, e...
- Patent number 7,867,917
- Issue date Jan 11, 2011
- Advanced Micro Devices, Inc.
- Joerg Hohage
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming a semiconductor structure comprising a field effe...
- Patent number 7,858,531
- Issue date Dec 28, 2010
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an insulating capping layer for a copper metalliz...
- Patent number 7,678,699
- Issue date Mar 16, 2010
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for creating different mechanical strain in different CPU...
- Patent number 7,608,912
- Issue date Oct 27, 2009
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing resist poisoning during patterning of silicon n...
- Patent number 7,550,396
- Issue date Jun 23, 2009
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an insulating capping layer for a copper metalliz...
- Patent number 7,491,638
- Issue date Feb 17, 2009
- Advanced Micro Devices, Inc.
- Joerg Hohage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Etch stop layer for a metallization layer with enhanced etch select...
- Patent number 7,476,626
- Issue date Jan 13, 2009
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for creating different mechanical strain in different cha...
- Patent number 7,396,718
- Issue date Jul 8, 2008
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor comprising a stressed c...
- Patent number 7,381,602
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor having a stressed chann...
- Patent number 7,341,903
- Issue date Mar 11, 2008
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a cap layer having anti-reflective characteristic...
- Patent number 7,030,044
- Issue date Apr 18, 2006
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-enriched low-k barrier layer for a copper metallization layer
- Patent number 7,022,602
- Issue date Apr 4, 2006
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer for a copper metallization layer including a low-k di...
- Patent number 6,893,956
- Issue date May 17, 2005
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming copper interconnect capping layers with improved...
- Patent number 6,596,631
- Issue date Jul 22, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment and capping layer process for producing a copper...
- Patent number 6,569,768
- Issue date May 27, 2003
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A SEMICO...
- Publication number 20140048912
- Publication date Feb 20, 2014
- GLOBALFOUNDRIES INC.
- Joerg Hohage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PROTECTION OF REACTIVE METAL SURFACES OF SEMICONDUCTOR DEVICES DURI...
- Publication number 20120235285
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Matthias Lehr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENGINEERING IN A CONTACT LEVEL OF SEMICONDUCTOR DEVICES BY S...
- Publication number 20110073959
- Publication date Mar 31, 2011
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-INSULATING STRESSED MATERIAL LAYERS IN A CONTACT LEVEL OF SEMIC...
- Publication number 20100327362
- Publication date Dec 30, 2010
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20100276790
- Publication date Nov 4, 2010
- GLOBALFOUNDRIES INC.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROVIDING SUPERIOR ELECTROMIGRATION PERFORMANCE AND REDUCING DETERI...
- Publication number 20100221911
- Publication date Sep 2, 2010
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED WAFER WARPAGE IN SEMICONDUCTORS BY STRESS ENGINEERING IN TH...
- Publication number 20100109131
- Publication date May 6, 2010
- Matthias Lehr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20090166800
- Publication date Jul 2, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...
- Publication number 20090166814
- Publication date Jul 2, 2009
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS TRANSFER BY SEQUENTIALLY PROVIDING A HIGHLY STRESSED ETCH ST...
- Publication number 20090108335
- Publication date Apr 30, 2009
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED...
- Publication number 20090057809
- Publication date Mar 5, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...
- Publication number 20090001453
- Publication date Jan 1, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION...
- Publication number 20080286966
- Publication date Nov 20, 2008
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HA...
- Publication number 20080203487
- Publication date Aug 28, 2008
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY USING AN AD...
- Publication number 20080179661
- Publication date Jul 31, 2008
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING A PASSIVATION LAYER WITHOUT A TERMINAL METAL
- Publication number 20080102540
- Publication date May 1, 2008
- Tobias Letz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARC LAYER HAVING A REDUCED FLAKING TENDENCY AND A METHOD OF MANUFAC...
- Publication number 20080078738
- Publication date Apr 3, 2008
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF SILICON N...
- Publication number 20080081480
- Publication date Apr 3, 2008
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING A SILICON NITRIDE LAYER HAVING HIGH INTRINSIC...
- Publication number 20070254492
- Publication date Nov 1, 2007
- Steffen Baer
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of forming an insulating capping layer for a copper metalliz...
- Publication number 20070123044
- Publication date May 31, 2007
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AN ETCH STOP LAYER FOR A METALLIZATION LAYER WITH ENHANCED ADHESION...
- Publication number 20070099010
- Publication date May 3, 2007
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR A METALLIZATION LAYER WITH ENHANCED ETCH SELECT...
- Publication number 20070096108
- Publication date May 3, 2007
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN IN DIFFERENT CPU...
- Publication number 20070077773
- Publication date Apr 5, 2007
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN INSULATING CAPPING LAYER FOR A COPPER METALLIZ...
- Publication number 20070037388
- Publication date Feb 15, 2007
- JOERG HOHAGE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming a field effect transistor having a stressed chann...
- Publication number 20060113641
- Publication date Jun 1, 2006
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for creating different mechanical strain in different cha...
- Publication number 20060091471
- Publication date May 4, 2006
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a field effect transistor comprising a stressed c...
- Publication number 20060076652
- Publication date Apr 13, 2006
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-enriched low-k barrier layer for a copper metallization layer
- Publication number 20040214430
- Publication date Oct 28, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a cap layer having anti-reflective characteristic...
- Publication number 20040121621
- Publication date Jun 24, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier layer for a copper metallization layer including a low k di...
- Publication number 20040084680
- Publication date May 6, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS

Joerg Hohage

Person

Patents Grantslast 30 patents

Technique for forming a passivation layer without a terminal metal

Protection of reactive metal surfaces of semiconductor devices duri...

Compressive stress transfer in an interlayer dielectric of a semico...

Interlayer dielectric material in a semiconductor device comprising...

Non-insulating stressed material layers in a contact level of semic...

Stress engineering in a contact level of semiconductor devices by s...

Method of forming a dielectric cap layer for a copper metallization...

Providing superior electromigration performance and reducing deteri...

Reduced wafer warpage in semiconductors by stress engineering in th...

Interlayer dielectric material in a semiconductor device comprising...

Stress transfer by sequentially providing a highly stressed etch st...

Enhanced stress transfer in an interlayer dielectric by using an ad...

Arc layer having a reduced flaking tendency and a method of manufac...

Stress transfer in an interlayer dielectric by providing a stressed...

Interlayer dielectric material in a semiconductor device comprising...

Etch stop layer for a metallization layer with enhanced adhesion, e...

Method of forming a semiconductor structure comprising a field effe...

Method of forming an insulating capping layer for a copper metalliz...

Technique for creating different mechanical strain in different CPU...

Method for reducing resist poisoning during patterning of silicon n...

Method of forming an insulating capping layer for a copper metalliz...

Etch stop layer for a metallization layer with enhanced etch select...

Technique for creating different mechanical strain in different cha...

Method of forming a field effect transistor comprising a stressed c...

Method of forming a field effect transistor having a stressed chann...

Method of forming a cap layer having anti-reflective characteristic...

Nitrogen-enriched low-k barrier layer for a copper metallization layer

Barrier layer for a copper metallization layer including a low-k di...

Method of forming copper interconnect capping layers with improved...

Surface treatment and capping layer process for producing a copper...

Patents Applicationslast 30 patents

COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A SEMICO...

PROTECTION OF REACTIVE METAL SURFACES OF SEMICONDUCTOR DEVICES DURI...

STRESS ENGINEERING IN A CONTACT LEVEL OF SEMICONDUCTOR DEVICES BY S...

NON-INSULATING STRESSED MATERIAL LAYERS IN A CONTACT LEVEL OF SEMIC...

INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...

PROVIDING SUPERIOR ELECTROMIGRATION PERFORMANCE AND REDUCING DETERI...

REDUCED WAFER WARPAGE IN SEMICONDUCTORS BY STRESS ENGINEERING IN TH...

INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...

INTERLAYER DIELECTRIC MATERIAL IN A SEMICONDUCTOR DEVICE COMPRISING...

STRESS TRANSFER BY SEQUENTIALLY PROVIDING A HIGHLY STRESSED ETCH ST...

STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING A FIELD EFFE...

METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION...

FIELD EFFECT TRANSISTOR HAVING AN INTERLAYER DIELECTRIC MATERIAL HA...

ENHANCED STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY USING AN AD...

TECHNIQUE FOR FORMING A PASSIVATION LAYER WITHOUT A TERMINAL METAL

ARC LAYER HAVING A REDUCED FLAKING TENDENCY AND A METHOD OF MANUFAC...

METHOD FOR REDUCING RESIST POISONING DURING PATTERNING OF SILICON N...

TECHNIQUE FOR FORMING A SILICON NITRIDE LAYER HAVING HIGH INTRINSIC...

Method of forming an insulating capping layer for a copper metalliz...

AN ETCH STOP LAYER FOR A METALLIZATION LAYER WITH ENHANCED ADHESION...

ETCH STOP LAYER FOR A METALLIZATION LAYER WITH ENHANCED ETCH SELECT...

TECHNIQUE FOR CREATING DIFFERENT MECHANICAL STRAIN IN DIFFERENT CPU...

METHOD OF FORMING AN INSULATING CAPPING LAYER FOR A COPPER METALLIZ...

Method of forming a field effect transistor having a stressed chann...

Technique for creating different mechanical strain in different cha...

Method of forming a field effect transistor comprising a stressed c...

Nitrogen-enriched low-k barrier layer for a copper metallization layer

Method of forming a cap layer having anti-reflective characteristic...

Barrier layer for a copper metallization layer including a low k di...