Johannes Van Meer

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 10,096,488
- Issue date Oct 9, 2018
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor structures and methods of fabricating same
- Patent number 9,812,336
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially forming a set of fins in a semiconductor device
- Patent number 9,437,740
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS circuit having a tensile stress layer overlying an NMOS transi...
- Patent number 9,373,548
- Issue date Jun 21, 2016
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress memorization techniques for transistor devices
- Patent number 9,231,079
- Issue date Jan 5, 2016
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with improved source/drain junction architecture...
- Patent number 9,178,053
- Issue date Nov 3, 2015
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation
- Patent number 9,136,330
- Issue date Sep 15, 2015
- GLOBALFOUNDRIES, INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve FinFet semiconductor device behavior using co-im...
- Patent number 9,082,698
- Issue date Jul 14, 2015
- GLOBALFOUNDRIES Inc.
- Manoj Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially forming a set of fins in a semiconductor device
- Patent number 9,034,737
- Issue date May 19, 2015
- GLOBALFOUNDRIES Inc.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with improved source/drain junction architecture...
- Patent number 8,962,441
- Issue date Feb 24, 2015
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming multiple N-type semiconductor devices with diffe...
- Patent number 8,846,476
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source and drain process with disposable spacers
- Patent number 7,745,296
- Issue date Jun 29, 2010
- GLOBALFOUNDRIES Inc.
- Johannes van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress enhanced CMOS circuits and methods for their fabrication
- Patent number 7,442,601
- Issue date Oct 28, 2008
- Advanced Micro Devices, Inc.
- Gen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 7,329,599
- Issue date Feb 12, 2008
- Advanced Micro Devices, Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20170263733
- Publication date Sep 14, 2017
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MEMORIZATION TECHNIQUES FOR TRANSISTOR DEVICES
- Publication number 20150364570
- Publication date Dec 17, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION
- Publication number 20150348830
- Publication date Dec 3, 2015
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING INDEPENDENT-GATE FINFET WITH TILTED PRE-AMORPHIZATION IMPLA...
- Publication number 20150340501
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES Inc.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
- Publication number 20150221770
- Publication date Aug 6, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME
- Publication number 20150115371
- Publication date Apr 30, 2015
- GLOBALFOUNDRIES INC.
- Michael GANZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...
- Publication number 20150108586
- Publication date Apr 23, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS
- Publication number 20150097197
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE
- Publication number 20150037945
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES INC.
- Johannes M. van Meer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION
- Publication number 20150021702
- Publication date Jan 22, 2015
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...
- Publication number 20150001640
- Publication date Jan 1, 2015
- GLOBALFOUNDRIES INC.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MULTIPLE N-TYPE SEMICONDUCTOR DEVICES WITH DIFFE...
- Publication number 20140227845
- Publication date Aug 14, 2014
- GLOBALFOUNDRIES INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED CMOS CIRCUITS
- Publication number 20090008718
- Publication date Jan 8, 2009
- Advanced Micro Devices, Inc.
- Gen PEI
- H01 - BASIC ELECTRIC ELEMENTS

Johannes Van Meer

Person

Patents Grantslast 30 patents

FinFET semiconductor structures and methods of fabricating same

FinFET semiconductor structures and methods of fabricating same

Epitaxially forming a set of fins in a semiconductor device

CMOS circuit having a tensile stress layer overlying an NMOS transi...

Stress memorization techniques for transistor devices

Transistor device with improved source/drain junction architecture...

Shallow trench isolation

Methods to improve FinFet semiconductor device behavior using co-im...

Epitaxially forming a set of fins in a semiconductor device

Transistor device with improved source/drain junction architecture...

Methods of forming multiple N-type semiconductor devices with diffe...

Raised source and drain process with disposable spacers

Stress enhanced CMOS circuits and methods for their fabrication

Method for fabricating a semiconductor device

Patents Applicationslast 30 patents

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

STRESS MEMORIZATION TECHNIQUES FOR TRANSISTOR DEVICES

SHALLOW TRENCH ISOLATION

FORMING INDEPENDENT-GATE FINFET WITH TILTED PRE-AMORPHIZATION IMPLA...

EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE

FINFET SEMICONDUCTOR STRUCTURES AND METHODS OF FABRICATING SAME

TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...

FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS

EPITAXIALLY FORMING A SET OF FINS IN A SEMICONDUCTOR DEVICE

SHALLOW TRENCH ISOLATION

TRANSISTOR DEVICE WITH IMPROVED SOURCE/DRAIN JUNCTION ARCHITECTURE...

METHODS OF FORMING MULTIPLE N-TYPE SEMICONDUCTOR DEVICES WITH DIFFE...

STRESS ENHANCED CMOS CIRCUITS