John Bruley

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 12,062,614
- Issue date Aug 13, 2024
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Sacrificial material facilitating protection of a substrate in a qu...
- Patent number 12,048,254
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Vivekananda P. Adiga
Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 11,862,567
- Issue date Jan 2, 2024
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spurious junction prevention via in-situ ion milling
- Patent number 11,765,985
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Vivekananda P. Adiga
Information Patent Grant
Grain size control of superconducting materials in thin films for J...
- Patent number 11,552,237
- Issue date Jan 10, 2023
- International Business Machines Corporation
- Benjamin Wymore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and methods for equivalent oxide thickness scaling on si...
- Patent number 11,152,214
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 11,101,219
- Issue date Aug 24, 2021
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 10,985,105
- Issue date Apr 20, 2021
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Shallow, abrupt and highly activated tin extension implant junction
- Patent number 10,529,832
- Issue date Jan 7, 2020
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS compatible non-filamentary resistive memory stack
- Patent number 10,505,112
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contacts including intermetallic alloy of nickel, pl...
- Patent number 10,269,714
- Issue date Apr 23, 2019
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
High germanium content silicon germanium fins
- Patent number 9,812,530
- Issue date Nov 7, 2017
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing an un-distorted dark field strain map at high s...
- Patent number 9,551,674
- Issue date Jan 24, 2017
- GLOBALFOUNDRIES, INC.
- Yun-Yu Wang
- G01 - MEASURING TESTING
Information Patent Grant
High germanium content silicon germanium fins
- Patent number 9,324,843
- Issue date Apr 26, 2016
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable physical unclonable function for device authentication
- Patent number 8,741,713
- Issue date Jun 3, 2014
- International Business Machines Corporation
- John Bruley
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
On-chip Cu interconnection using 1 to 5 nm thick metal cap
- Patent number 7,247,946
- Issue date Jul 24, 2007
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron holography method
- Patent number 7,015,469
- Issue date Mar 21, 2006
- Jeol USA, Inc.
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Site-specific methodology for localization and analyzing junction d...
- Patent number 6,884,641
- Issue date Apr 26, 2005
- International Business Machines Corporation
- John Bruley
- G01 - MEASURING TESTING
Information Patent Grant
Pre-anneal of CoSi, to prevent formation of amorphous layer between...
- Patent number 6,878,624
- Issue date Apr 12, 2005
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron microscope magnification standard providing precise calibr...
- Patent number 6,875,982
- Issue date Apr 5, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS
- Publication number 20240334837
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Matthias Georg Gottwald
Information Patent Application
ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE
- Publication number 20240244982
- Publication date Jul 18, 2024
- International Business Machines Corporation
- Guohan Hu
Information Patent Application
SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING
- Publication number 20230397506
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Vivekananda P. Adiga
Information Patent Application
SACRIFICIAL MATERIAL FACILITATING PROTECTION OF A SUBSTRATE IN A QU...
- Publication number 20220123195
- Publication date Apr 21, 2022
- International Business Machines Corporation
- Vivekananda P. Adiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAIN SIZE CONTROL OF SUPERCONDUCTING MATERIALS IN THIN FILMS FOR J...
- Publication number 20220059748
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Benjamin Wymore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING
- Publication number 20210399199
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Vivekananda P. Adiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...
- Publication number 20210343647
- Publication date Nov 4, 2021
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...
- Publication number 20210193576
- Publication date Jun 24, 2021
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
CMOS Compatible Non-Filamentary Resistive Memory Stack
- Publication number 20190393413
- Publication date Dec 26, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODE
- Publication number 20190273205
- Publication date Sep 5, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICES FREE OF EXTENDED GRAIN BOUNDARIES
- Publication number 20190245056
- Publication date Aug 8, 2019
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...
- Publication number 20190157203
- Publication date May 23, 2019
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...
- Publication number 20190067198
- Publication date Feb 28, 2019
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
SHALLOW, ABRUPT AND HIGHLY ACTIVATED TIN EXTENSION IMPLANT JUNCTION
- Publication number 20180175174
- Publication date Jun 21, 2018
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...
- Publication number 20180068950
- Publication date Mar 8, 2018
- International Business Machines Corporation
- John Bruley
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SI...
- Publication number 20170309487
- Publication date Oct 26, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SI...
- Publication number 20170309723
- Publication date Oct 26, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS
- Publication number 20160197147
- Publication date Jul 7, 2016
- International Business Machines Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS
- Publication number 20160071956
- Publication date Mar 10, 2016
- International Business Machine Corporation
- Karthik Balakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABLE PHYSICAL UNCLONABLE FUNCTION FOR DEVICE AUTHENTICATION
- Publication number 20140042442
- Publication date Feb 13, 2014
- International Business Machines Corporation
- JOHN BRULEY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
- Publication number 20120326314
- Publication date Dec 27, 2012
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
- Publication number 20120228773
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Stephen L. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
On-chip Cu interconnection using 1 to 5 nm thick metal cap
- Publication number 20060160350
- Publication date Jul 20, 2006
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-ANNEAL OF COSI, TO PREVENT FORMATION OF AMORPHOUS LAYER BETWEEN...
- Publication number 20050070098
- Publication date Mar 31, 2005
- International Business Machines Corporation
- John Bruley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SITE-SPECIFIC METHODOLOGY FOR LOCALIZATION AND ANALYZING JUNCTION D...
- Publication number 20050064610
- Publication date Mar 24, 2005
- International Business Machines Corporation
- JOHN BRULEY
- G01 - MEASURING TESTING
Information Patent Application
CAPACITOR AND FABRICATION METHOD USING ULTRA-HIGH VACUUM CVD OF SIL...
- Publication number 20050054156
- Publication date Mar 10, 2005
- International Business Machines Corporation
- John Bruley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AN ELECTRON MICROSCOPE MAGNIFICATION STANDARD PROVIDING PRECISE CAL...
- Publication number 20050045819
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Stephen W. Bedell
- G01 - MEASURING TESTING
Information Patent Application
Electron holography method
- Publication number 20040195506
- Publication date Oct 7, 2004
- IBM Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS

John Bruley

Person

Patents Grantslast 30 patents

Low resistance contacts including intermetallic alloy of nickel, pl...

Sacrificial material facilitating protection of a substrate in a qu...

Low resistance contacts including intermetallic alloy of nickel, pl...

Spurious junction prevention via in-situ ion milling

Grain size control of superconducting materials in thin films for J...

Structures and methods for equivalent oxide thickness scaling on si...

Low resistance contacts including intermetallic alloy of nickel, pl...

Low resistance contacts including intermetallic alloy of nickel, pl...

Shallow, abrupt and highly activated tin extension implant junction

CMOS compatible non-filamentary resistive memory stack

Low resistance contacts including intermetallic alloy of nickel, pl...

High germanium content silicon germanium fins

Method of producing an un-distorted dark field strain map at high s...

High germanium content silicon germanium fins

Reliable physical unclonable function for device authentication

On-chip Cu interconnection using 1 to 5 nm thick metal cap

Electron holography method

Site-specific methodology for localization and analyzing junction d...

Pre-anneal of CoSi, to prevent formation of amorphous layer between...

Electron microscope magnification standard providing precise calibr...

Patents Applicationslast 30 patents

MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS

ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE

SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING

SACRIFICIAL MATERIAL FACILITATING PROTECTION OF A SUBSTRATE IN A QU...

GRAIN SIZE CONTROL OF SUPERCONDUCTING MATERIALS IN THIN FILMS FOR J...

SPURIOUS JUNCTION PREVENTION VIA IN-SITU ION MILLING

LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...

LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...

CMOS Compatible Non-Filamentary Resistive Memory Stack

ReRAM DEVICE RESISTIVITY CONTROL BY OXIDIZED ELECTRODE

FERROELECTRIC DEVICES FREE OF EXTENDED GRAIN BOUNDARIES

LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...

LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...

SHALLOW, ABRUPT AND HIGHLY ACTIVATED TIN EXTENSION IMPLANT JUNCTION

LOW RESISTANCE CONTACTS INCLUDING INTERMETALLIC ALLOY OF NICKEL, PL...

STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SI...

STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SI...

HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS

HIGH GERMANIUM CONTENT SILICON GERMANIUM FINS

RELIABLE PHYSICAL UNCLONABLE FUNCTION FOR DEVICE AUTHENTICATION

LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND

LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND

On-chip Cu interconnection using 1 to 5 nm thick metal cap

PRE-ANNEAL OF COSI, TO PREVENT FORMATION OF AMORPHOUS LAYER BETWEEN...

SITE-SPECIFIC METHODOLOGY FOR LOCALIZATION AND ANALYZING JUNCTION D...

CAPACITOR AND FABRICATION METHOD USING ULTRA-HIGH VACUUM CVD OF SIL...

AN ELECTRON MICROSCOPE MAGNIFICATION STANDARD PROVIDING PRECISE CAL...

Electron holography method