John C. Bean

Person

New Providence, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Article comprising an epitaxial multilayer mirror
- Patent number 5,244,749
- Issue date Sep 14, 1993
- AT&T Bell Laboratories
- John C. Bean
- G02 - OPTICS
Information Patent Grant
Method of fabricating patterned epitaxial silicon films utilizing m...
- Patent number 5,134,090
- Issue date Jul 28, 1992
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a polysilicon emitter bipolar transistor
- Patent number 5,096,840
- Issue date Mar 17, 1992
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising a lattice-mismatched semiconductor heterostructure
- Patent number 5,091,767
- Issue date Feb 25, 1992
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device using ordered semiconductor alloy
- Patent number RE33693
- Issue date Sep 17, 1991
- AT&T Bell Laboratories
- John C. Bean
- 357 -
Information Patent Grant
Method of controlling the order-disorder state in a semiconductor d...
- Patent number 4,879,256
- Issue date Nov 7, 1989
- AT&T Bell Laboratories
- John C. Bean
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...
- Patent number 4,861,393
- Issue date Aug 29, 1989
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having strain induced region of altered bandgap
- Patent number 4,772,924
- Issue date Sep 20, 1988
- John C. Bean
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon germanium photodetector
- Patent number 4,725,870
- Issue date Feb 16, 1988
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John C. Bean
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus for simultaneous molecular beam deposition on a plurality...
- Patent number 4,681,773
- Issue date Jul 21, 1987
- American Telephone and Telegraph Company AT&T Bell Laboratories
- John C. Bean
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device using ordered semiconductor alloy
- Patent number 4,661,829
- Issue date Apr 28, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- John C. Bean
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing metal silicide-silicon heterostructures
- Patent number 4,554,045
- Issue date Nov 19, 1985
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si uti...
- Patent number 4,529,455
- Issue date Jul 16, 1985
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium p-i-n photodetector on silicon substrate
- Patent number 4,514,748
- Issue date Apr 30, 1985
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide-silicon heterostructures
- Patent number 4,492,971
- Issue date Jan 8, 1985
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS

John C. Bean

Person

Patents Grantslast 30 patents

Article comprising an epitaxial multilayer mirror

Method of fabricating patterned epitaxial silicon films utilizing m...

Method of making a polysilicon emitter bipolar transistor

Article comprising a lattice-mismatched semiconductor heterostructure

Device using ordered semiconductor alloy

Method of controlling the order-disorder state in a semiconductor d...

Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on...

Device having strain induced region of altered bandgap

Silicon germanium photodetector

Apparatus for simultaneous molecular beam deposition on a plurality...

Device using ordered semiconductor alloy

Method for producing metal silicide-silicon heterostructures

Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si uti...

Germanium p-i-n photodetector on silicon substrate

Metal silicide-silicon heterostructures