John F. Rembetski

Person

Burlington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective deposition process
- Patent number 5,714,798
- Issue date Feb 3, 1998
- International Business Machines Corp.
- Michael David Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench mask for forming deep trenches in a semiconductor substrate,...
- Patent number 5,686,345
- Issue date Nov 11, 1997
- International Business Machines Corporation
- David Laurant Harmon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition process
- Patent number 5,618,379
- Issue date Apr 8, 1997
- International Business Machines Corporation
- Michael D. Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming borderless contacts using a removable mandrel
- Patent number 5,466,636
- Issue date Nov 14, 1995
- International Business Machines Corporation
- John E. Cronin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive ion etching buffer mask
- Patent number 5,298,790
- Issue date Mar 29, 1994
- International Business Machines Corporation
- David L. Harmon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive ion etching buffer mask
- Patent number 5,118,384
- Issue date Jun 2, 1992
- International Business Machines Corporation
- David L. Harmon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma etching a substrate with a gaseous organohalide co...
- Patent number 5,053,104
- Issue date Oct 1, 1991
- International Business Machines Corporation
- Suryadevara V. Babu
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

John F. Rembetski

Person

Patents Grantslast 30 patents

Selective deposition process

Trench mask for forming deep trenches in a semiconductor substrate,...

Selective deposition process

Method of forming borderless contacts using a removable mandrel

Reactive ion etching buffer mask

Reactive ion etching buffer mask

Method of plasma etching a substrate with a gaseous organohalide co...