John J. PLOMBON

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diamondoid materials in quantum computing devices
- Patent number 12,260,296
- Issue date Mar 25, 2025
- Intel Corporation
- David J. Michalak
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 12,009,018
- Issue date Jun 11, 2024
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal dichalcogenide based magnetoelectric memory device
- Patent number 11,696,514
- Issue date Jul 4, 2023
- Intel Corporation
- Chia-Ching Lin
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for boosting signal in magnetoelectric spin or...
- Patent number 11,502,188
- Issue date Nov 15, 2022
- Intel Corporation
- Chia-Ching Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 11,393,515
- Issue date Jul 19, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transition metal dichalcogenide based magnetoelectric memory device
- Patent number 11,245,068
- Issue date Feb 8, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having ruthenium phosphorus thin films
- Patent number 10,658,487
- Issue date May 19, 2020
- Intel Corporation
- Scott B. Clendenning
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Seam healing of metal interconnects
- Patent number 10,629,525
- Issue date Apr 21, 2020
- Intel Corporation
- Ramanan V. Chebiam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dry etch by atomic layer removal of oxide layers f...
- Patent number 10,217,646
- Issue date Feb 26, 2019
- Intel Corporation
- Patricio E. Romero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam healing of metal interconnects
- Patent number 10,068,845
- Issue date Sep 4, 2018
- Intel Corporation
- Ramanan V. Chebiam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal from a cobalt metal precursor
- Patent number 9,385,033
- Issue date Jul 5, 2016
- Intel Corporation
- James M. Blackwell
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface charge enhanced atomic layer deposition of pure metallic films
- Patent number 8,425,987
- Issue date Apr 23, 2013
- Intel Corporation
- Juan E. Dominguez
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Using unstable nitrides to form semiconductor structures
- Patent number 8,344,352
- Issue date Jan 1, 2013
- Intel Corporation
- Juan E. Dominguez
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Tunable gate electrode work function material for transistor applic...
- Patent number 8,319,287
- Issue date Nov 27, 2012
- Intel Corporation
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using unstable nitrides to form semiconductor structures
- Patent number 7,982,204
- Issue date Jul 19, 2011
- Intel Corporation
- Juan E. Dominguez
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fluorine-free precursors and methods for the deposition of conforma...
- Patent number 7,858,525
- Issue date Dec 28, 2010
- Intel Corporation
- Juan E. Dominguez
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Organometallic precursors for seed/barrier processes and methods th...
- Patent number 7,851,360
- Issue date Dec 14, 2010
- Intel Corporation
- Juan Dominguez
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Using unstable nitrides to form semiconductor structures
- Patent number 7,749,906
- Issue date Jul 6, 2010
- Intel Corporation
- Juan E. Dominguez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition method for high-k dielectric materials
- Patent number 7,704,895
- Issue date Apr 27, 2010
- Intel Corporation
- Adrien R. Lavoie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tunable gate electrode work function material for transistor applic...
- Patent number 7,682,891
- Issue date Mar 23, 2010
- Intel Corporation
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct tailoring of the composition and density of ALD films
- Patent number 7,524,765
- Issue date Apr 28, 2009
- Intel Corporation
- Juan E. Dominquez
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition process for iodine-doped ruthenium barrier layers
- Patent number 7,476,615
- Issue date Jan 13, 2009
- Intel Corporation
- Joseph H. Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Catalytically enhanced atomic layer deposition process
- Patent number 7,354,849
- Issue date Apr 8, 2008
- Intel Corporation
- John J. Plombon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
MAGNETOELECTRIC SPIN–ORBIT (MESO) DEVICE WITH ANTIFERROMAGNETIC SPI...
- Publication number 20250221318
- Publication date Jul 3, 2025
- Intel Corporation
- Mahendra DC
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC
- Publication number 20240222475
- Publication date Jul 4, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...
- Publication number 20240222506
- Publication date Jul 4, 2024
- Intel Corporation
- Hojoon Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST
- Publication number 20240201586
- Publication date Jun 20, 2024
- Intel Corporation
- James Blackwell
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...
- Publication number 20240105822
- Publication date Mar 28, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH PEROVSKITE FILMS
- Publication number 20230200081
- Publication date Jun 22, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...
- Publication number 20230200079
- Publication date Jun 22, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILL OF VIAS IN SINGLE AND DUAL DAMASCENE STRUCTURES USING SELF-ASS...
- Publication number 20230197601
- Publication date Jun 22, 2023
- Intel Corporation
- Jiun-Ruey Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICE WITH A TOPOLOGICAL INSULATO...
- Publication number 20230086080
- Publication date Mar 23, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE
- Publication number 20220310147
- Publication date Sep 29, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE
- Publication number 20220123206
- Publication date Apr 21, 2022
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE WITH RUTHENIUM DIFFUSION BARRIER
- Publication number 20200395406
- Publication date Dec 17, 2020
- Intel Corporation
- EMILY WALKER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR BOOSTING SIGNAL IN MAGNETOELECTRIC SPIN OR...
- Publication number 20190386662
- Publication date Dec 19, 2019
- Intel Corporation
- Chia-Ching Lin
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE
- Publication number 20190386208
- Publication date Dec 19, 2019
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE
- Publication number 20190385655
- Publication date Dec 19, 2019
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES HAVING RUTHENIUM PHOSPHORUS THIN FILMS
- Publication number 20190252511
- Publication date Aug 15, 2019
- Intel Corporation
- Scott B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEAM HEALING OF METAL INTERCONNECTS
- Publication number 20190088593
- Publication date Mar 21, 2019
- Intel Corporation
- Ramanan V. CHEBIAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DRY ETCH BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS F...
- Publication number 20180138054
- Publication date May 17, 2018
- Intel Corporation
- Patricio E. ROMERO
- H01 - BASIC ELECTRIC ELEMENTS

John J. PLOMBON

Person

Patents Grantslast 30 patents

Diamondoid materials in quantum computing devices

Transition metal dichalcogenide based spin orbit torque memory device

Transition metal dichalcogenide based magnetoelectric memory device

Magnetic memory device with ruthenium diffusion barrier

Apparatus and method for boosting signal in magnetoelectric spin or...

Transition metal dichalcogenide based spin orbit torque memory device

Transition metal dichalcogenide based magnetoelectric memory device

Semiconductor devices having ruthenium phosphorus thin films

Seam healing of metal interconnects

Transition metal dry etch by atomic layer removal of oxide layers f...

Seam healing of metal interconnects

Method of forming a metal from a cobalt metal precursor

Surface charge enhanced atomic layer deposition of pure metallic films

Using unstable nitrides to form semiconductor structures

Tunable gate electrode work function material for transistor applic...

Using unstable nitrides to form semiconductor structures

Fluorine-free precursors and methods for the deposition of conforma...

Organometallic precursors for seed/barrier processes and methods th...

Using unstable nitrides to form semiconductor structures

Deposition method for high-k dielectric materials

Tunable gate electrode work function material for transistor applic...

Direct tailoring of the composition and density of ALD films

Deposition process for iodine-doped ruthenium barrier layers

Catalytically enhanced atomic layer deposition process

Patents Applicationslast 30 patents

MAGNETOELECTRIC SPIN–ORBIT (MESO) DEVICE WITH ANTIFERROMAGNETIC SPI...

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE...

PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

TRANSISTOR DEVICES WITH PEROVSKITE FILMS

FERROELECTRIC OXIDE- AND FERROELECTRIC MONOCHALCOGENIDE-BASED CAPAC...

FILL OF VIAS IN SINGLE AND DUAL DAMASCENE STRUCTURES USING SELF-ASS...

MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICE WITH A TOPOLOGICAL INSULATO...

TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE

TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE WITH RUTHENIUM DIFFUSION BARRIER

APPARATUS AND METHOD FOR BOOSTING SIGNAL IN MAGNETOELECTRIC SPIN OR...

TRANSITION METAL DICHALCOGENIDE BASED MAGNETO-ELECTRIC MEMORY DEVICE

TRANSITION METAL DICHALCOGENIDE BASED SPIN ORBIT TORQUE MEMORY DEVICE

SEMICONDUCTOR DEVICES HAVING RUTHENIUM PHOSPHORUS THIN FILMS

SEAM HEALING OF METAL INTERCONNECTS

TRANSITION METAL DRY ETCH BY ATOMIC LAYER REMOVAL OF OXIDE LAYERS F...