John LIN

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid active-field gap extended drain MOS transistor
- Patent number 11,482,613
- Issue date Oct 25, 2022
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having double isolation with one floating isolation
- Patent number 10,937,905
- Issue date Mar 2, 2021
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating resurf layer in high voltage lateral d...
- Patent number 10,319,809
- Issue date Jun 11, 2019
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid active-field gap extended drain MOS transistor
- Patent number 10,205,001
- Issue date Feb 12, 2019
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures to avoid floating RESURF layer in high voltage lateral d...
- Patent number 9,876,071
- Issue date Jan 23, 2018
- Texas Instruments Incorporated
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid active-field gap extended drain MOS transistor
- Patent number 9,608,088
- Issue date Mar 28, 2017
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC with floating buried layer ring for isolation of embedded islands
- Patent number 9,087,708
- Issue date Jul 21, 2015
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated high voltage divider
- Patent number 8,878,330
- Issue date Nov 4, 2014
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate controlled high voltage divider
- Patent number 8,872,273
- Issue date Oct 28, 2014
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making vertical transistor with graded field plate dielec...
- Patent number 8,853,029
- Issue date Oct 7, 2014
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid active-field gap extended drain MOS transistor
- Patent number 8,754,469
- Issue date Jun 17, 2014
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench with rounded corners for BiCMOS process
- Patent number 8,274,131
- Issue date Sep 25, 2012
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,910,417
- Issue date Mar 22, 2011
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench with rounded corners for BiCMOS process
- Patent number 7,846,789
- Issue date Dec 7, 2010
- Texas Instruments Incorporated
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a top side wafer contact and a method of...
- Patent number 7,741,205
- Issue date Jun 22, 2010
- Texas Instruments Incorporated
- Tony Thanh Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to manufacture LDMOS transistors with improved threshold vol...
- Patent number 7,696,049
- Issue date Apr 13, 2010
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,605,412
- Issue date Oct 20, 2009
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed high voltage JFET
- Patent number 7,417,270
- Issue date Aug 26, 2008
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a top side wafer contact and a method of...
- Patent number 7,345,343
- Issue date Mar 18, 2008
- Texas Instruments Incorporated
- Tony T. Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a transistor level top side wafer contact...
- Patent number 7,262,109
- Issue date Aug 28, 2007
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Premature breakdown in submicron device geometries
- Patent number 7,195,965
- Issue date Mar 27, 2007
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed power MOSFET
- Patent number 7,187,034
- Issue date Mar 6, 2007
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to manufacture LDMOS transistors with improved threshold vol...
- Patent number 7,141,455
- Issue date Nov 28, 2006
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors and methods for making the same
- Patent number 6,900,101
- Issue date May 31, 2005
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with improved safe operating area
- Patent number 6,878,999
- Issue date Apr 12, 2005
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Segmented power MOSFET of safe operation
- Patent number 6,815,276
- Issue date Nov 9, 2004
- Texas Instruments Incorporated
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
- Publication number 20190172930
- Publication date Jun 6, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20180108729
- Publication date Apr 19, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
- Publication number 20160343852
- Publication date Nov 24, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...
- Publication number 20160254346
- Publication date Sep 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Yongxi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING DOUBLE ISOLATION WITH ONE FLOATING ISOLATION
- Publication number 20150340496
- Publication date Nov 26, 2015
- TEXAS INSTRUMENTS INCORPORATED
- YONGXI ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS
- Publication number 20150118861
- Publication date Apr 30, 2015
- TEXAS INSTRUMENTS INCORPORATED
- BRADLEY DAVID SUCHER
- C30 - CRYSTAL GROWTH
Information Patent Application
IC WITH FLOATING BURIED LAYER RING FOR ISOLATION OF EMBEDDED ISLANDS
- Publication number 20150041907
- Publication date Feb 12, 2015
- TEXAS INSTRUMENTS INCORPORATED
- JOHN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
- Publication number 20140256108
- Publication date Sep 11, 2014
- Sameer P. PENDHARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED HIGH VOLTAGE DIVIDER
- Publication number 20130032922
- Publication date Feb 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GATE CONTROLLED HIGH VOLTAGE DIVIDER
- Publication number 20130032863
- Publication date Feb 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
- Publication number 20120098062
- Publication date Apr 26, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING VERTICAL TRANSISTOR WITH GRADED FIELD PLATE DIELEC...
- Publication number 20110275210
- Publication date Nov 10, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
- Publication number 20110073955
- Publication date Mar 31, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER T...
- Publication number 20100264486
- Publication date Oct 21, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BVDII Enhancement with a Cascode DMOS
- Publication number 20090159968
- Publication date Jun 25, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Steve L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS
- Publication number 20090096033
- Publication date Apr 16, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Sameer P. Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED HIGH VOLTAGE JFET
- Publication number 20080299716
- Publication date Dec 4, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Having a Top Side Wafer Contact and a Method of...
- Publication number 20080132066
- Publication date Jun 5, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Tony T. Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO MANUFACTURE LDMOS TRANSISTORS WITH IMPROVED THRESHOLD VOL...
- Publication number 20070048952
- Publication date Mar 1, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit having a transistor level top side wafer contact...
- Publication number 20070045732
- Publication date Mar 1, 2007
- Texas Instruments Inc.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit having a top side wafer contact and a method of...
- Publication number 20070029611
- Publication date Feb 8, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Tony T. Phan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED HIGH VOLTAGE JFET
- Publication number 20070012958
- Publication date Jan 18, 2007
- Texas Instruments Inc.
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed high voltage JFET
- Publication number 20050285157
- Publication date Dec 29, 2005
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH IMPROVED SAFE OPERATING AREA
- Publication number 20050012148
- Publication date Jan 20, 2005
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed power MOSFET
- Publication number 20040256669
- Publication date Dec 23, 2004
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS transistors and methods for making the same
- Publication number 20040251492
- Publication date Dec 16, 2004
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to manufacture LDMOS transistors with improved threshold vol...
- Publication number 20040106236
- Publication date Jun 3, 2004
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Premature breakdown in submicron device geometries
- Publication number 20040079991
- Publication date Apr 29, 2004
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device using dummy opening...
- Publication number 20040079974
- Publication date Apr 29, 2004
- TEXAS INSTRUMENTS INCORPORATED
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed power MOSFET
- Publication number 20040067617
- Publication date Apr 8, 2004
- Philip L. Hower
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Hybrid active-field gap extended drain MOS transistor

Transistor having double isolation with one floating isolation

Structures to avoid floating resurf layer in high voltage lateral d...

Hybrid active-field gap extended drain MOS transistor

Structures to avoid floating RESURF layer in high voltage lateral d...

Hybrid active-field gap extended drain MOS transistor

IC with floating buried layer ring for isolation of embedded islands

Integrated high voltage divider

Integrated gate controlled high voltage divider

Method of making vertical transistor with graded field plate dielec...

Hybrid active-field gap extended drain MOS transistor

Isolation trench with rounded corners for BiCMOS process

Distributed high voltage JFET

Isolation trench with rounded corners for BiCMOS process

Integrated circuit having a top side wafer contact and a method of...

Method to manufacture LDMOS transistors with improved threshold vol...

Distributed high voltage JFET

Distributed high voltage JFET

Integrated circuit having a top side wafer contact and a method of...

Integrated circuit having a transistor level top side wafer contact...

Premature breakdown in submicron device geometries

Distributed power MOSFET

Method to manufacture LDMOS transistors with improved threshold vol...

LDMOS transistors and methods for making the same

Transistor with improved safe operating area

Segmented power MOSFET of safe operation

Patents Applicationslast 30 patents

HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR

STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL D...

TRANSISTOR HAVING DOUBLE ISOLATION WITH ONE FLOATING ISOLATION

CZOCHRALSKI SUBSTRATES HAVING REDUCED OXYGEN DONORS

IC WITH FLOATING BURIED LAYER RING FOR ISOLATION OF EMBEDDED ISLANDS

HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR

INTEGRATED HIGH VOLTAGE DIVIDER

INTEGRATED GATE CONTROLLED HIGH VOLTAGE DIVIDER

HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR

METHOD OF MAKING VERTICAL TRANSISTOR WITH GRADED FIELD PLATE DIELEC...

ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS

FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER T...

BVDII Enhancement with a Cascode DMOS

ISOLATION TRENCH WITH ROUNDED CORNERS FOR BiCMOS PROCESS

DISTRIBUTED HIGH VOLTAGE JFET

Integrated Circuit Having a Top Side Wafer Contact and a Method of...

METHOD TO MANUFACTURE LDMOS TRANSISTORS WITH IMPROVED THRESHOLD VOL...

Integrated circuit having a transistor level top side wafer contact...

Integrated circuit having a top side wafer contact and a method of...

DISTRIBUTED HIGH VOLTAGE JFET

Distributed high voltage JFET

TRANSISTOR WITH IMPROVED SAFE OPERATING AREA

Distributed power MOSFET

LDMOS transistors and methods for making the same

Method to manufacture LDMOS transistors with improved threshold vol...

Premature breakdown in submicron device geometries

Method for manufacturing a semiconductor device using dummy opening...

Distributed power MOSFET