John Mark Anthony

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 7,115,461
- Issue date Oct 3, 2006
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal oxide gate structures and capacitor electrodes
- Patent number 6,897,105
- Issue date May 24, 2005
- Texas Instrument Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 6,841,439
- Issue date Jan 11, 2005
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,730,977
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,613,698
- Issue date Sep 2, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-dielectric constant capacitor and memory
- Patent number 6,462,931
- Issue date Oct 8, 2002
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,274,510
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing high-quality crystalline silicon quantum wells fo...
- Patent number 6,248,621
- Issue date Jun 19, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for growing high-quality crystalline Si quantum wells for RT...
- Patent number 6,069,368
- Issue date May 30, 2000
- Texas Instruments Incorporated
- Glen D. Wilk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a nano-rugged silicon-containing layer
- Patent number 6,040,230
- Issue date Mar 21, 2000
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anode plate for flat panel display having integrated getter
- Patent number 5,689,151
- Issue date Nov 18, 1997
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High permittivity silicate gate dielectric
- Publication number 20050112827
- Publication date May 26, 2005
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20030207590
- Publication date Nov 6, 2003
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal oxide gate structures and capacitor electrodes
- Publication number 20010053593
- Publication date Dec 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20010023115
- Publication date Sep 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS

John Mark Anthony

Person

Patents Grantslast 30 patents

High permittivity silicate gate dielectric

Method of forming metal oxide gate structures and capacitor electrodes

High permittivity silicate gate dielectric

Lower temperature method for forming high quality silicon-nitrogen...

Lower temperature method for forming high quality silicon-nitrogen...

High-dielectric constant capacitor and memory

Lower temperature method for forming high quality silicon-nitrogen...

Method of growing high-quality crystalline silicon quantum wells fo...

Method for growing high-quality crystalline Si quantum wells for RT...

Method of forming a nano-rugged silicon-containing layer

Anode plate for flat panel display having integrated getter

Patents Applicationslast 30 patents

High permittivity silicate gate dielectric

Lower temperature method for forming high quality silicon-nitrogen...

Method of forming metal oxide gate structures and capacitor electrodes

Lower temperature method for forming high quality silicon-nitrogen...