John P. EDWARDS

Person

Verona, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Heterostructure power transistor with AlSiN passivation layer
- Patent number 10,446,676
- Issue date Oct 15, 2019
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure power transistor with AlSiN passivation layer
- Patent number 9,761,704
- Issue date Sep 12, 2017
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-quality GaN high-voltage HFETs on silicon
- Patent number 9,437,688
- Issue date Sep 6, 2016
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating GaN high voltage HFET with passivation plus g...
- Patent number 9,343,541
- Issue date May 17, 2016
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality GaN high-voltage HFETs on silicon
- Patent number 9,147,734
- Issue date Sep 29, 2015
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure power transistor with AlSiN passivation layer
- Patent number 8,928,037
- Issue date Jan 6, 2015
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality GaN high-voltage HFETs on silicon
- Patent number 8,703,561
- Issue date Apr 22, 2014
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN high voltage HFET with passivation plus gate dielectric multila...
- Patent number 8,633,094
- Issue date Jan 21, 2014
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High quality GaN high-voltage HFETS on silicon
- Patent number 8,507,947
- Issue date Aug 13, 2013
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Heterostructure Power Transistor with AlSiN Passivation Layer
- Publication number 20180026126
- Publication date Jan 25, 2018
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
- Publication number 20150364552
- Publication date Dec 17, 2015
- Power Integrations, Inc.
- Jamal RAMDANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure Power Transistor with AlSiN Passivation Layer
- Publication number 20150076510
- Publication date Mar 19, 2015
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
- Publication number 20140374768
- Publication date Dec 25, 2014
- Power Integrations, Inc.
- Jamal RAMDANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterostructure Power Transistor With AlSiN Passivation Layer
- Publication number 20140239309
- Publication date Aug 28, 2014
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN High Voltage HFET with Passivation Plus Gate Dielectric Multila...
- Publication number 20140124789
- Publication date May 8, 2014
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC
- Publication number 20130330888
- Publication date Dec 12, 2013
- Power Integrations, Inc.
- John P. EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
- Publication number 20130302972
- Publication date Nov 14, 2013
- Jamal RAMDANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC
- Publication number 20130146943
- Publication date Jun 13, 2013
- John P. EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
- Publication number 20130146863
- Publication date Jun 13, 2013
- Jamal RAMDANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN high voltage HFET with passivation plus gate dielectric multila...
- Publication number 20130140605
- Publication date Jun 6, 2013
- Power Integrations, Inc.
- Jamal Ramdani
- H01 - BASIC ELECTRIC ELEMENTS

John P. EDWARDS

Person

Patents Grantslast 30 patents

Heterostructure power transistor with AlSiN passivation layer

Heterostructure power transistor with AlSiN passivation layer

High-quality GaN high-voltage HFETs on silicon

Method of fabricating GaN high voltage HFET with passivation plus g...

High quality GaN high-voltage HFETs on silicon

Heterostructure power transistor with AlSiN passivation layer

High quality GaN high-voltage HFETs on silicon

GaN high voltage HFET with passivation plus gate dielectric multila...

High quality GaN high-voltage HFETS on silicon

Patents Applicationslast 30 patents

Heterostructure Power Transistor with AlSiN Passivation Layer

HIGH-QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON

Heterostructure Power Transistor with AlSiN Passivation Layer

HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON

Heterostructure Power Transistor With AlSiN Passivation Layer

GaN High Voltage HFET with Passivation Plus Gate Dielectric Multila...

IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC

HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON

IN SITU GROWN GATE DIELECTRIC AND FIELD PLATE DIELECTRIC

HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON

GaN high voltage HFET with passivation plus gate dielectric multila...