John S. Lechaton

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabricating planar complementary patterned subcollectors with silic...
- Patent number 5,279,987
- Issue date Jan 18, 1994
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device contact including transition...
- Patent number 5,086,016
- Issue date Feb 4, 1992
- International Business Machines Corporation
- Stephen B. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS process
- Patent number 4,960,726
- Issue date Oct 2, 1990
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance integrated circuit having modified extrinsic base
- Patent number 4,752,817
- Issue date Jun 21, 1988
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RIE process for etching silicon isolation trenches and polycides wi...
- Patent number 4,726,879
- Issue date Feb 23, 1988
- International Business Machines Corporation
- James A. Bondur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Total dielectric isolation for integrated circuits
- Patent number 4,661,832
- Issue date Apr 28, 1987
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a high performance transistor integrated circuit
- Patent number 4,573,256
- Issue date Mar 4, 1986
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and resulting structure for selective multiple base width tr...
- Patent number 4,535,531
- Issue date Aug 20, 1985
- International Business Machines Corporation
- Harsaran S. Bhatia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Total dielectric isolation for integrated circuits
- Patent number 4,502,913
- Issue date Mar 5, 1985
- International Business Machines Corporation
- John S. Lechaton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a base etched transistor integrated circuit
- Patent number 4,435,898
- Issue date Mar 13, 1984
- International Business Machines Corporation
- Santosh P. Gaur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of planarizing silicon dioxide in semiconductor devices
- Patent number 4,389,281
- Issue date Jun 21, 1983
- International Business Machines Corporation
- Narasipur G. Anantha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for making coplanar layers of thin films
- Patent number 4,090,006
- Issue date May 16, 1978
- International Business Machines Corporation
- Janos Havas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making coplanar layers of thin films
- Patent number 4,035,276
- Issue date Jul 12, 1977
- IBM Corporation
- Janos Havas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming feedthrough connections for multi-level interconnections me...
- Patent number 4,029,562
- Issue date Jun 14, 1977
- IBM Corporation
- Bai-Cwo Feng
- H01 - BASIC ELECTRIC ELEMENTS

John S. Lechaton

Person

Patents Grantslast 30 patents

Fabricating planar complementary patterned subcollectors with silic...

Method of making semiconductor device contact including transition...

BiCMOS process

High performance integrated circuit having modified extrinsic base

RIE process for etching silicon isolation trenches and polycides wi...

Total dielectric isolation for integrated circuits

Method for making a high performance transistor integrated circuit

Method and resulting structure for selective multiple base width tr...

Total dielectric isolation for integrated circuits

Method for making a base etched transistor integrated circuit

Method of planarizing silicon dioxide in semiconductor devices

Structure for making coplanar layers of thin films

Making coplanar layers of thin films

Forming feedthrough connections for multi-level interconnections me...