John Zhang

Person

Altamont, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 12,250,828
- Issue date Mar 11, 2025
- HeFeChip Corporation Limited
- John H Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 12,107,144
- Issue date Oct 1, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,948,977
- Issue date Apr 2, 2024
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 11,705,458
- Issue date Jul 18, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of selected molecular clusters
- Patent number 11,695,053
- Issue date Jul 4, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making interconnect structure having ferroelectric capaci...
- Patent number 11,664,415
- Issue date May 30, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around vacuum channel transistor
- Patent number 11,664,458
- Issue date May 30, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power biological sensing system
- Patent number 11,622,707
- Issue date Apr 11, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 11,538,720
- Issue date Dec 27, 2022
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling FinFET
- Patent number 11,515,418
- Issue date Nov 29, 2022
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI FinFET transistor with strained channel
- Patent number 11,495,676
- Issue date Nov 8, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition of selected molecular clusters
- Patent number 11,482,608
- Issue date Oct 25, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nanosheet transistors with sharp junctions
- Patent number 11,430,651
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator device with partially recessed gate
- Patent number 11,398,554
- Issue date Jul 26, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vias and air-gaps in semiconductor fabrication
- Patent number 11,380,583
- Issue date Jul 5, 2022
- TESSERA LLC
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment for quantum dot array devices with metal sourc...
- Patent number 11,264,480
- Issue date Mar 1, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for a volatile memory and method of manufactur...
- Patent number 11,244,947
- Issue date Feb 8, 2022
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for alignment of vertically stacked wafers and die
- Patent number 11,205,621
- Issue date Dec 21, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried local interconnect
- Patent number 11,152,307
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM interconnect structure having ferroelectric capacitors exhibit...
- Patent number 11,063,112
- Issue date Jul 13, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,049,862
- Issue date Jun 29, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around vacuum channel transistor
- Patent number 11,031,504
- Issue date Jun 8, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with local connection
- Patent number 10,985,063
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of wafer surface charge during CMP
- Patent number 10,964,551
- Issue date Mar 30, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate all-around transistor
- Patent number 10,950,722
- Issue date Mar 16, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having overlapping semiconductor fins oriented in different...
- Patent number 10,943,837
- Issue date Mar 9, 2021
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 10,937,811
- Issue date Mar 2, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vias and air-gaps in semiconductor fabrication
- Patent number 10,930,553
- Issue date Feb 23, 2021
- Tessera, Inc.
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate-all-around TFET
- Patent number 10,910,385
- Issue date Feb 2, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20250151395
- Publication date May 8, 2025
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240215218
- Publication date Jun 27, 2024
- HeFeChip Corporation Limited
- Liang LI
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF
- Publication number 20230317526
- Publication date Oct 5, 2023
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS
- Publication number 20230298941
- Publication date Sep 21, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE HAVING AN AIR SPACER AND METHOD FOR MAKING THE...
- Publication number 20230290855
- Publication date Sep 14, 2023
- HeFeChip Corporation Limited
- John H Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230284458
- Publication date Sep 7, 2023
- HeFeChip Corporation Limited
- John H Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING PLUG FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR D...
- Publication number 20230240065
- Publication date Jul 27, 2023
- HeFeChip Corporation Limited
- Liang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS
- Publication number 20230018529
- Publication date Jan 19, 2023
- STMicroelectronics, Inc.
- John H. Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FORMING SELF-ALIGNED VIAS AND AIR-GAPS IN SEMICONDUCTOR FABRICATION
- Publication number 20220406658
- Publication date Dec 22, 2022
- TESSERA LLC
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE
- Publication number 20220328632
- Publication date Oct 13, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...
- Publication number 20220140110
- Publication date May 5, 2022
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20210391356
- Publication date Dec 16, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM INTERCONNECT STRUCTURE HAVING FERROELECTRIC CAPACITORS EXHIBIT...
- Publication number 20210343829
- Publication date Nov 4, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND VACUUM CHANNEL TRANSISTOR
- Publication number 20210273116
- Publication date Sep 2, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED VIAS AND AIR-GAPS IN SEMICONDUCTOR FABRICATION
- Publication number 20210202313
- Publication date Jul 1, 2021
- Tessera, Inc.
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20210118888
- Publication date Apr 22, 2021
- HeFeChip Corporation Limited
- John Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS
- Publication number 20210098593
- Publication date Apr 1, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SOI FINFET TRANSISTOR WITH STRAINED CHANNEL
- Publication number 20200373416
- Publication date Nov 26, 2020
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS
- Publication number 20200350211
- Publication date Nov 5, 2020
- Tessera, Inc.
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TUNNELING FINFET
- Publication number 20200295187
- Publication date Sep 17, 2020
- STMicroelectronics, Inc.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND VACUUM CHANNEL TRANSISTOR
- Publication number 20200279954
- Publication date Sep 3, 2020
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD FOR ALIGNMENT OF VERTICALLY STACKED WAFERS AND DIE
- Publication number 20200203286
- Publication date Jun 25, 2020
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED LOCAL INTERCONNECT
- Publication number 20200194372
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A TRANSISTOR HAVING A SHARP JUNCTION BY FO...
- Publication number 20200119049
- Publication date Apr 16, 2020
- STMicroelectronics, Inc.
- John Hongguang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE WIDTH NANOSHEET DEVICES
- Publication number 20200058801
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOCAL CONNECTION
- Publication number 20200027787
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FIN CHANNEL DEVICES
- Publication number 20200006561
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE
- Publication number 20200006476
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GATE-ALL-AROUND TFET
- Publication number 20200006350
- Publication date Jan 2, 2020
- STMicroelectronics, Inc.
- John H. Zhang
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Semiconductor structure and fabrication method thereof

Integrated circuit devices and fabrication techniques

Threshold adjustment for quantum dot array devices with metal sourc...

Silicon on insulator device with partially recessed gate

Integrated circuit devices and fabrication techniques

Atomic layer deposition of selected molecular clusters

Method of making interconnect structure having ferroelectric capaci...

Gate all around vacuum channel transistor

Low power biological sensing system

Stacked transistors with different channel widths

Vertical tunneling FinFET

SOI FinFET transistor with strained channel

Atomic layer deposition of selected molecular clusters

Nanosheet transistors with sharp junctions

Silicon on insulator device with partially recessed gate

Forming self-aligned vias and air-gaps in semiconductor fabrication

Threshold adjustment for quantum dot array devices with metal sourc...

Semiconductor device for a volatile memory and method of manufactur...

Device and method for alignment of vertically stacked wafers and die

Buried local interconnect

DRAM interconnect structure having ferroelectric capacitors exhibit...

Semiconductor device and fabrication method thereof

Gate all around vacuum channel transistor

Semiconductor device with local connection

Control of wafer surface charge during CMP

Vertical gate all-around transistor

Device having overlapping semiconductor fins oriented in different...

Integrated circuit devices and fabrication techniques

Forming self-aligned vias and air-gaps in semiconductor fabrication

Vertical gate-all-around TFET

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF

STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS

TRANSISTOR STRUCTURE HAVING AN AIR SPACER AND METHOD FOR MAKING THE...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

METHOD OF FORMING PLUG FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR D...

ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS

FORMING SELF-ALIGNED VIAS AND AIR-GAPS IN SEMICONDUCTOR FABRICATION

SILICON ON INSULATOR DEVICE WITH PARTIALLY RECESSED GATE

THRESHOLD ADJUSTMENT FOR QUANTUM DOT ARRAY DEVICES WITH METAL SOURC...

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

DRAM INTERCONNECT STRUCTURE HAVING FERROELECTRIC CAPACITORS EXHIBIT...

GATE ALL AROUND VACUUM CHANNEL TRANSISTOR

FORMING SELF-ALIGNED VIAS AND AIR-GAPS IN SEMICONDUCTOR FABRICATION

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS

SOI FINFET TRANSISTOR WITH STRAINED CHANNEL

STACKED TRANSISTORS WITH DIFFERENT CHANNEL WIDTHS

VERTICAL TUNNELING FINFET

GATE ALL AROUND VACUUM CHANNEL TRANSISTOR

DEVICE AND METHOD FOR ALIGNMENT OF VERTICALLY STACKED WAFERS AND DIE

BURIED LOCAL INTERCONNECT

METHOD FOR MANUFACTURING A TRANSISTOR HAVING A SHARP JUNCTION BY FO...

MULTIPLE WIDTH NANOSHEET DEVICES

SEMICONDUCTOR DEVICE WITH LOCAL CONNECTION

STRAINED FIN CHANNEL DEVICES

NANOSHEET TRANSISTOR WITH ROBUST SOURCE/DRAIN ISOLATION FROM SUBSTRATE

VERTICAL GATE-ALL-AROUND TFET