Jon Farr

Person

Vallejo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for etching a material layer for semiconductor applications
- Patent number 12,165,877
- Issue date Dec 10, 2024
- Applied Materials, Inc.
- Zhigang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a pre-etch protective layer
- Patent number 11,915,940
- Issue date Feb 27, 2024
- Applied Materials, Inc.
- Zhi Gang Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatus for cleaning a substrate after processing
- Patent number 11,551,942
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Manoj A. Gajendra
- B08 - CLEANING
Information Patent Grant
Source RF power split inner coil to improve BCD and etch depth perf...
- Patent number 10,211,030
- Issue date Feb 19, 2019
- Applied Materials, Inc.
- Rongping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for high efficiency gas dissociation in induct...
- Patent number 9,070,633
- Issue date Jun 30, 2015
- Applied Materials, Inc.
- Roy C. Nangoy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Post etch reactive plasma milling to smooth through substrate via s...
- Patent number 9,039,908
- Issue date May 26, 2015
- Applied Materials, Inc.
- Jon Farr
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for high efficiency gas dissociation in induct...
- Patent number 8,753,474
- Issue date Jun 17, 2014
- Applied Materials, Inc.
- Roy C. Nangoy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a deep trench in a substrate
- Patent number 8,158,522
- Issue date Apr 17, 2012
- Applied Materials, Inc.
- Khalid M. Sirajuddin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR ETCHING A MATERIAL LAYER FOR SEMICONDUCTOR APPLICATIONS
- Publication number 20220399205
- Publication date Dec 15, 2022
- Applied Materials, Inc.
- Zhigang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
- Publication number 20220285133
- Publication date Sep 8, 2022
- Applied Materials, Inc.
- Abhishek Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR CLEANING A SUBSTRATE AFTER PROCESSING
- Publication number 20220084843
- Publication date Mar 17, 2022
- Applied Materials, Inc.
- Manoj A. GAJENDRA
- B08 - CLEANING
Information Patent Application
METHOD OF DEPOSITING A PRE-ETCH PROTECTIVE LAYER
- Publication number 20220059359
- Publication date Feb 24, 2022
- Applied Materials, Inc.
- Zhi Gang WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SOURCE RF POWER SPLIT INNER COIL TO IMPROVE BCD AND ETCH DEPTH PERF...
- Publication number 20170200585
- Publication date Jul 13, 2017
- Applied Materials, Inc.
- Rongping WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCT...
- Publication number 20140256148
- Publication date Sep 11, 2014
- Roy C. NANGOY
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE
- Publication number 20110217832
- Publication date Sep 8, 2011
- Digvijay Raorane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DEEP TRENCH IN A SUBSTRATE
- Publication number 20110201205
- Publication date Aug 18, 2011
- Khalid M. Sirajuddin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCT...
- Publication number 20110073564
- Publication date Mar 31, 2011
- Applied Materials, Inc.
- Roy C. Nangoy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR PROTECTING A SUBSTRATE SUPPORT IN A SEMIC...
- Publication number 20100186663
- Publication date Jul 29, 2010
- Applied Materials, Inc.
- Jon Christian FARR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post etch reactive plasma milling to smooth through substrate via s...
- Publication number 20100055400
- Publication date Mar 4, 2010
- APPLIED MATERIALS, INC.
- Jon Farr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS
- Publication number 20090272717
- Publication date Nov 5, 2009
- Applied Materials, Inc.
- Sharma V. Pamarthy
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods for etching a material layer for semiconductor applications

Method of depositing a pre-etch protective layer

Methods and apparatus for cleaning a substrate after processing

Source RF power split inner coil to improve BCD and etch depth perf...

Method and apparatus for high efficiency gas dissociation in induct...

Post etch reactive plasma milling to smooth through substrate via s...

Method and apparatus for high efficiency gas dissociation in induct...

Method of forming a deep trench in a substrate

Patents Applicationslast 30 patents

METHODS FOR ETCHING A MATERIAL LAYER FOR SEMICONDUCTOR APPLICATIONS

METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

METHODS AND APPARATUS FOR CLEANING A SUBSTRATE AFTER PROCESSING

METHOD OF DEPOSITING A PRE-ETCH PROTECTIVE LAYER

SOURCE RF POWER SPLIT INNER COIL TO IMPROVE BCD AND ETCH DEPTH PERF...

METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCT...

METHOD OF FILLING A DEEP TRENCH IN A SUBSTRATE

METHOD OF FORMING A DEEP TRENCH IN A SUBSTRATE

METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCT...

METHODS AND APPARATUS FOR PROTECTING A SUBSTRATE SUPPORT IN A SEMIC...

Post etch reactive plasma milling to smooth through substrate via s...

METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS