Jon Holt

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductive device fabricated using a substantially disassociate...
- Patent number 7,531,464
- Issue date May 12, 2009
- Texas Instruments Incorporated
- Jeff White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolation with rounded upper corner f...
- Patent number 7,504,339
- Issue date Mar 17, 2009
- Texas Instruments Incorporated
- Zhihao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of improving drive currents by employing strain inducing ST...
- Patent number 7,396,728
- Issue date Jul 8, 2008
- Texas Instruments Incorporated
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form shallow trench isolation with rounded upper corner f...
- Patent number 6,917,093
- Issue date Jul 12, 2005
- Texas Instruments Incorporated
- Zhihao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving a physical property defect value of a gate die...
- Patent number 6,869,862
- Issue date Mar 22, 2005
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF SEMICONDUCTOR DEVICE OXIDE AT LOWER TEMPERATURE USIN...
- Publication number 20090246970
- Publication date Oct 1, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Jeff White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductive device fabricated using a substantially disassociate...
- Publication number 20070141853
- Publication date Jun 21, 2007
- Texas Instruments Inc.
- Jeff White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of improving drive currents by employing strain inducing ST...
- Publication number 20070004118
- Publication date Jan 4, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Ajith Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form shallow trench isolation with rounded upper corner f...
- Publication number 20050208732
- Publication date Sep 22, 2005
- Zhihao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving a physical property defect value of a gate die...
- Publication number 20050156286
- Publication date Jul 21, 2005
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form shallow trench isolation with rounded upper corner f...
- Publication number 20050062127
- Publication date Mar 24, 2005
- Zhihao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for improving a physical property defect value of a gate die...
- Publication number 20040029391
- Publication date Feb 12, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductive device fabricated using a substantially disassociate...

Method to form shallow trench isolation with rounded upper corner f...

Methods of improving drive currents by employing strain inducing ST...

Method to form shallow trench isolation with rounded upper corner f...

Method for improving a physical property defect value of a gate die...

Patents Applicationslast 30 patents

FABRICATION OF SEMICONDUCTOR DEVICE OXIDE AT LOWER TEMPERATURE USIN...

Semiconductive device fabricated using a substantially disassociate...

Methods of improving drive currents by employing strain inducing ST...

Method to form shallow trench isolation with rounded upper corner f...

Method for improving a physical property defect value of a gate die...

Method to form shallow trench isolation with rounded upper corner f...

Method for improving a physical property defect value of a gate die...