Jonathan K. Abrokwah

Person

Scottsdale, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Insulated gate field effect transistors
- Patent number 8,847,280
- Issue date Sep 30, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an insulated gate field effect device
- Patent number 8,105,925
- Issue date Jan 31, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Balun signal transformer and method of forming
- Patent number 7,961,063
- Issue date Jun 14, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Lianjun Liu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated passive device with a high resistivity substrate and met...
- Patent number 7,935,607
- Issue date May 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V MOSFET fabrication and device
- Patent number 7,842,587
- Issue date Nov 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Balun transformer with improved harmonic suppression
- Patent number 7,683,733
- Issue date Mar 23, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Qiang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency circuit with integrated on-chip radio frequency sig...
- Patent number 7,305,223
- Issue date Dec 4, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Lianjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor component and semiconductor...
- Patent number 6,855,965
- Issue date Feb 15, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemistry for etching quaternary interface layers on InGaAsP mostly...
- Patent number 6,803,248
- Issue date Oct 12, 2004
- Freescale Semiconductor, Inc.
- Mariam G. Sadaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor component having a capacitor
- Patent number 6,465,297
- Issue date Oct 15, 2002
- Motorola, Inc.
- Haldane S. Henry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor component and semiconductor...
- Patent number 6,368,929
- Issue date Apr 9, 2002
- Motorola, Inc.
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulator-compound semiconductor interface structure
- Patent number 6,359,294
- Issue date Mar 19, 2002
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate quality oxide-compound semiconductor struc...
- Patent number 6,159,834
- Issue date Dec 12, 2000
- Motorola, Inc.
- Zhiyi (Jimmy) Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing crystalline alkaline earth metal oxides on a Si...
- Patent number 6,113,690
- Issue date Sep 5, 2000
- Motorola, Inc.
- Zhiyi Jimmy Yu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of passivating the surface of a Si substrate
- Patent number 6,110,840
- Issue date Aug 29, 2000
- Motorola, Inc.
- Zhiyi Jimmy Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultraviolet transmitting oxide with metallic oxide phase and method...
- Patent number 6,094,295
- Issue date Jul 25, 2000
- Motorola, Inc.
- Matthias Passlack
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-V epitaxial wafer production
- Patent number 6,030,453
- Issue date Feb 29, 2000
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of oxide-compound semiconductor interfaces
- Patent number 6,025,281
- Issue date Feb 15, 2000
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alkaline-earth metal silicides on silicon
- Patent number 6,022,410
- Issue date Feb 8, 2000
- Motorola, Inc.
- Zhiyi Yu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-aligned metal-oxide-compound semiconductor device and method o...
- Patent number 5,945,718
- Issue date Aug 31, 1999
- Motorola Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating submicron FETs with low temperature group III...
- Patent number 5,937,285
- Issue date Aug 10, 1999
- Motorola, Inc.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon nitride layer
- Patent number 5,907,792
- Issue date May 25, 1999
- Motorola,Inc.
- Ravi Droopad
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication method for a gate quality oxide-compound semiconductor...
- Patent number 5,904,553
- Issue date May 18, 1999
- Motorola, Inc.
- Matthias Passlack
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal processing of oxide-compound semiconductor structures
- Patent number 5,902,130
- Issue date May 11, 1999
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low subthreshold leakage current HFET
- Patent number 5,895,929
- Issue date Apr 20, 1999
- Motorola, Inc.
- Jonathan Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Refractory gate heterostructure field effect transistor
- Patent number 5,739,557
- Issue date Apr 14, 1998
- Motorola, Inc.
- Vernon Patrick O'Neil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type higfet and method
- Patent number 5,693,544
- Issue date Dec 2, 1997
- Motorola, Inc.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HIGFET and method
- Patent number 5,614,739
- Issue date Mar 25, 1997
- Motorola
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure field effect device having refractory ohmic contact...
- Patent number 5,606,184
- Issue date Feb 25, 1997
- Motorola, Inc.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a Ga.sub.2 O.sub.3 dielectric layer
- Patent number 5,597,768
- Issue date Jan 28, 1997
- Motorola, Inc.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE FIELD EFFECT TRANSISTORS
- Publication number 20120056246
- Publication date Mar 8, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BALUN SIGNAL TRANSFORMER AND METHOD OF FORMING
- Publication number 20100026411
- Publication date Feb 4, 2010
- LIANJUN LIU
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
PASSIVATED III-V FIELD EFFECT STRUCTURE AND METHOD
- Publication number 20100025729
- Publication date Feb 4, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BALUN TRANSFORMER WITH IMPROVED HARMONIC SUPPRESSION
- Publication number 20090195324
- Publication date Aug 6, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Qiang Li
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
III-V MOSFET Fabrication and Device
- Publication number 20090189252
- Publication date Jul 30, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PASSIVE DEVICE WITH A HIGH RESISTIVITY SUBSTRATE AND MET...
- Publication number 20080246114
- Publication date Oct 9, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an electrically insulating layer on a compound se...
- Publication number 20070082505
- Publication date Apr 12, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Jonathan K. Abrokwah
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Radio frequency circuit with integrated on-chip radio frequency sig...
- Publication number 20060141979
- Publication date Jun 29, 2006
- Lianjun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemistry for etching quaternary interface layers on InGaAsP mostly...
- Publication number 20030138984
- Publication date Jul 24, 2003
- Mariam G. Sadaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor component and semiconductor...
- Publication number 20020053683
- Publication date May 9, 2002
- Darrell G. Hill
- H01 - BASIC ELECTRIC ELEMENTS

Jonathan K. Abrokwah

Person

Patents Grantslast 30 patents

Insulated gate field effect transistors

Method for forming an insulated gate field effect device

Balun signal transformer and method of forming

Integrated passive device with a high resistivity substrate and met...

III-V MOSFET fabrication and device

Balun transformer with improved harmonic suppression

Radio frequency circuit with integrated on-chip radio frequency sig...

Method of manufacturing a semiconductor component and semiconductor...

Chemistry for etching quaternary interface layers on InGaAsP mostly...

Method of manufacturing a semiconductor component having a capacitor

Method of manufacturing a semiconductor component and semiconductor...

Insulator-compound semiconductor interface structure

Method of forming a gate quality oxide-compound semiconductor struc...

Method of preparing crystalline alkaline earth metal oxides on a Si...

Method of passivating the surface of a Si substrate

Ultraviolet transmitting oxide with metallic oxide phase and method...

III-V epitaxial wafer production

Passivation of oxide-compound semiconductor interfaces

Alkaline-earth metal silicides on silicon

Self-aligned metal-oxide-compound semiconductor device and method o...

Method of fabricating submicron FETs with low temperature group III...

Method of forming a silicon nitride layer

Fabrication method for a gate quality oxide-compound semiconductor...

Thermal processing of oxide-compound semiconductor structures

Low subthreshold leakage current HFET

Refractory gate heterostructure field effect transistor

N-type higfet and method

HIGFET and method

Heterostructure field effect device having refractory ohmic contact...

Method of forming a Ga.sub.2 O.sub.3 dielectric layer

Patents Applicationslast 30 patents

INSULATED GATE FIELD EFFECT TRANSISTORS

BALUN SIGNAL TRANSFORMER AND METHOD OF FORMING

PASSIVATED III-V FIELD EFFECT STRUCTURE AND METHOD

BALUN TRANSFORMER WITH IMPROVED HARMONIC SUPPRESSION

III-V MOSFET Fabrication and Device

INTEGRATED PASSIVE DEVICE WITH A HIGH RESISTIVITY SUBSTRATE AND MET...

Method of forming an electrically insulating layer on a compound se...

Radio frequency circuit with integrated on-chip radio frequency sig...

Chemistry for etching quaternary interface layers on InGaAsP mostly...

Method of manufacturing a semiconductor component and semiconductor...