Joong Jeon

Person

Los Altos, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell system with multiple nitride layers
- Patent number 8,809,936
- Issue date Aug 19, 2014
- GLOBALFOUNDRIES Inc.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with improved erase speed
- Patent number 7,863,128
- Issue date Jan 4, 2011
- Spansion LLC
- Joong Jeon
- G11 - INFORMATION STORAGE
Information Patent Grant
Zero interface polysilicon to polysilicon gate for flash memory
- Patent number 7,863,175
- Issue date Jan 4, 2011
- Spansion LLC
- Robert Bertram Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film germanium diode with low reverse breakdown
- Patent number 7,468,296
- Issue date Dec 23, 2008
- Spansion LLC
- Ercan Adem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory cell having high-K dielectric
- Patent number 7,446,369
- Issue date Nov 4, 2008
- Spansion, LLC
- Takashi Whitney Orimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having enhanced high-K dielectric
- Patent number 7,365,389
- Issue date Apr 29, 2008
- Spansion LLC
- Joong Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS memory cell having a graded high-K dielectric
- Patent number 7,294,547
- Issue date Nov 13, 2007
- Advanced Micro Devices, Inc.
- Takashi Whitney Orimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical oxidation for bitline oxide of SONOS
- Patent number 7,232,724
- Issue date Jun 19, 2007
- Advanced Micro Devices, Inc.
- Hidehiko Shiraiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum oxide as liner or cover layer to spacers in memory device
- Patent number 7,196,008
- Issue date Mar 27, 2007
- Spansion LLC
- Hidehiko Shiraiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS gates formed by integrating metals having different work funct...
- Patent number 7,176,531
- Issue date Feb 13, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a thin, high quality buffer layer in a field eff...
- Patent number 7,071,051
- Issue date Jul 4, 2006
- Advanced Micro Devices, Inc.
- Joong S. Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modulating flatband voltage of devices having high-k gat...
- Patent number 7,033,894
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Huicai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method of manufacture
- Patent number 7,026,211
- Issue date Apr 11, 2006
- Advanced Micro Devices, Inc.
- Rinji Sugino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a field effect transistor having a high-k gate d...
- Patent number 6,991,990
- Issue date Jan 31, 2006
- Advanced Micro Devices, Inc.
- Joong S Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure having nitride layer with reduced charge loss...
- Patent number 6,992,370
- Issue date Jan 31, 2006
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment of dielectric material to enhance etch rate
- Patent number 6,905,971
- Issue date Jun 14, 2005
- Advanced Micro Devices, Inc.
- Cyrus Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming polysilicon gate on high-k dielectric and relate...
- Patent number 6,902,977
- Issue date Jun 7, 2005
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating metals having different work functions to fo...
- Patent number 6,872,613
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of composite high-K/standard-K dielectrics for semicond...
- Patent number 6,849,925
- Issue date Feb 1, 2005
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a field effect transistor having a high-k gate d...
- Patent number 6,797,572
- Issue date Sep 28, 2004
- Advanced Micro Devices, Inc.
- Joong S Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of stack high-K gate dielectrics with nitrided layer
- Patent number 6,790,755
- Issue date Sep 14, 2004
- Advanced Micro Devices, Inc.
- Joong Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implantation into high-K dielectric material after gate etch to fac...
- Patent number 6,764,898
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked polysilicon layer for boron penetration inhibition
- Patent number 6,762,454
- Issue date Jul 13, 2004
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dielectric layers
- Patent number 6,759,346
- Issue date Jul 6, 2004
- Advanced Micro Devices, Inc.
- Joong Jeon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interfacial barrier layer in semiconductor devices with high-K gate...
- Patent number 6,693,004
- Issue date Feb 17, 2004
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of composite high-K/standard-K dielectrics for semicond...
- Patent number 6,645,882
- Issue date Nov 11, 2003
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating transistor having a single crystalline gate c...
- Patent number 6,620,671
- Issue date Sep 16, 2003
- Advanced Micro Devices, Inc.
- Haihong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors with high-k dielectric gate insulator for reducing...
- Patent number 6,621,114
- Issue date Sep 16, 2003
- Advanced Micro Devices, Inc.
- Hyeon-Seag Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of high-k nitride silicate layers by cyclic molecular l...
- Patent number 6,607,973
- Issue date Aug 19, 2003
- Advanced Micro Devices, Inc.
- Joong Jeon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated process for fabrication of graded composite dielectric m...
- Patent number 6,586,349
- Issue date Jul 1, 2003
- Advanced Micro Devices, Inc.
- Joong S. Jeon
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR SEMICONDUCTOR DE...
- Publication number 20080150028
- Publication date Jun 26, 2008
- Advanced Micro Devices, Inc.
- Robert Bertram Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR FLASH MEMORY
- Publication number 20080149986
- Publication date Jun 26, 2008
- SPANSION LLC
- Robert Bertram Ogle, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM WITH MULTIPLE NITRIDE LAYERS
- Publication number 20080023750
- Publication date Jan 31, 2008
- SPANSION LLC
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS memory cell having high-K dielectric
- Publication number 20070029601
- Publication date Feb 8, 2007
- Takashi Whitney Orimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integrating a high-k gate dielectric in a transistor fab...
- Publication number 20050101147
- Publication date May 12, 2005
- Advanced Micro Devices, Inc.
- Catherine B. Labelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...
- Publication number 20050054149
- Publication date Mar 10, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preparation of stack high-K gate dielectrics with nitrided layer
- Publication number 20030194853
- Publication date Oct 16, 2003
- Joong Jeon
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Memory cell system with multiple nitride layers

Non-volatile memory device with improved erase speed

Zero interface polysilicon to polysilicon gate for flash memory

Thin film germanium diode with low reverse breakdown

SONOS memory cell having high-K dielectric

Memory cell having enhanced high-K dielectric

SONOS memory cell having a graded high-K dielectric

Radical oxidation for bitline oxide of SONOS

Aluminum oxide as liner or cover layer to spacers in memory device

CMOS gates formed by integrating metals having different work funct...

Method for forming a thin, high quality buffer layer in a field eff...

Method for modulating flatband voltage of devices having high-k gat...

Semiconductor component and method of manufacture

Method for forming a field effect transistor having a high-k gate d...

Memory cell structure having nitride layer with reduced charge loss...

Treatment of dielectric material to enhance etch rate

Method for forming polysilicon gate on high-k dielectric and relate...

Method for integrating metals having different work functions to fo...

Preparation of composite high-K/standard-K dielectrics for semicond...

Method for forming a field effect transistor having a high-k gate d...

Preparation of stack high-K gate dielectrics with nitrided layer

Implantation into high-K dielectric material after gate etch to fac...

Stacked polysilicon layer for boron penetration inhibition

Method of forming dielectric layers

Interfacial barrier layer in semiconductor devices with high-K gate...

Preparation of composite high-K/standard-K dielectrics for semicond...

Method of fabricating transistor having a single crystalline gate c...

MOS transistors with high-k dielectric gate insulator for reducing...

Preparation of high-k nitride silicate layers by cyclic molecular l...

Integrated process for fabrication of graded composite dielectric m...

Patents Applicationslast 30 patents

ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR SEMICONDUCTOR DE...

ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR FLASH MEMORY

MEMORY CELL SYSTEM WITH MULTIPLE NITRIDE LAYERS

SONOS memory cell having high-K dielectric

Method for integrating a high-k gate dielectric in a transistor fab...

METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...

Preparation of stack high-K gate dielectrics with nitrided layer