Jorge Adrian Kittl

Person

Waterloo, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Metal-insulator-metal capacitor and method for manufacturing thereof
- Patent number 9,343,298
- Issue date May 17, 2016
- IMEC
- Mihaela Ioana Popovici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing low resistivity contacts on n-type germanium
- Patent number 9,177,812
- Issue date Nov 3, 2015
- IMEC
- Koen Martens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a metal-insulator-metal capacitor for use in s...
- Patent number 8,649,154
- Issue date Feb 11, 2014
- IMEC
- Mihaela Ioana Popovici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric layer for flash memory device and method for manufacturi...
- Patent number 8,405,166
- Issue date Mar 26, 2013
- IMEC
- Christoph Adelmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for improved nickel silicide
- Patent number 8,372,750
- Issue date Feb 12, 2013
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a nickelsilicide FUSI gate
- Patent number 8,344,460
- Issue date Jan 1, 2013
- IMEC
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of dopants to provide low defect gate full silicidation
- Patent number 8,183,137
- Issue date May 22, 2012
- Texas Instruments Incorporated
- Mark Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a nickelsilicide FUSI gate
- Patent number 7,989,344
- Issue date Aug 2, 2011
- IMEC
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual workfunction semiconductor device
- Patent number 7,851,297
- Issue date Dec 14, 2010
- IMEC
- Stefan Jakschik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for improved nickel silicide
- Patent number 7,825,025
- Issue date Nov 2, 2010
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced diffusion of workfunction modulat...
- Patent number 7,759,748
- Issue date Jul 20, 2010
- IMEC
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a Yb-doped Ni full silicidation low work function...
- Patent number 7,504,329
- Issue date Mar 17, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a fully silicided gate and devices obtained thereof
- Patent number 7,491,635
- Issue date Feb 17, 2009
- Interuniversitair Microelektronica Centrum
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing Low Resistivity Contacts on n-Type Germanium
- Publication number 20120138928
- Publication date Jun 7, 2012
- Katholieke Universiteit Leuven, K.U.Leuven R&D
- Koen Martens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Insulator-Metal Capacitor and Method for Manufacturing Thereof
- Publication number 20120092807
- Publication date Apr 19, 2012
- IMEC
- Mihaela Ioana Popovici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Producing a Metal-Insulator-Metal Capacitor for Use in S...
- Publication number 20120075767
- Publication date Mar 29, 2012
- IMEC
- Mihaela Ioana Popovici
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for Forming a Nickelsilicide FUSI Gate
- Publication number 20120018784
- Publication date Jan 26, 2012
- IMEC
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER FOR FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURI...
- Publication number 20110147900
- Publication date Jun 23, 2011
- IMEC
- Christoph Adelmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IMPROVED NICKEL SILICIDE
- Publication number 20110014768
- Publication date Jan 20, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Memory Cell Comprising a Capacitor Having a St...
- Publication number 20100072531
- Publication date Mar 25, 2010
- IMEC
- Jorge Kittl
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DUAL WORKFUNCTION SEMICONDUCTOR DEVICE
- Publication number 20090020821
- Publication date Jan 22, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Stefan Jakschik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Nickelsilicide FUSI Gate
- Publication number 20090001483
- Publication date Jan 1, 2009
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF DOPANTS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
- Publication number 20080290427
- Publication date Nov 27, 2008
- Texas Instruments Inc.
- Mark Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION
- Publication number 20080290428
- Publication date Nov 27, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Mark Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF LOW TEMPERATURE ANNEAL TO PROVIDE LOW DEFECT GATE FULL SILIC...
- Publication number 20080293193
- Publication date Nov 27, 2008
- Texas Instruments Inc.
- Mark Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a doped metal comprising main elect...
- Publication number 20080136030
- Publication date Jun 12, 2008
- Interuniversitair MicroelektronicaCentrum (IMEC)
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor device and semiconductor device...
- Publication number 20080105933
- Publication date May 8, 2008
- Interuniversitair Microelektronica Centrum (IMEC)
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a silicidated contact
- Publication number 20070080408
- Publication date Apr 12, 2007
- Interuniversitair Microlektronica Centrum (IMEC)
- Philippe Absil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a fully silicided gate and devices obtained thereof
- Publication number 20070015334
- Publication date Jan 18, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW WORK FUNCTION METAL ALLOY
- Publication number 20060286802
- Publication date Dec 21, 2006
- HongYu Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Dual Fully Silicided Gates and Devices with Dual...
- Publication number 20060263961
- Publication date Nov 23, 2006
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming fully silicided gates and devices obtained thereof
- Publication number 20060258156
- Publication date Nov 16, 2006
- Interuniversitair Microelektronica Centrum (IMEC)
- Jorge Adrian Kittl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for improved nickel silicide
- Publication number 20060073656
- Publication date Apr 6, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS

Jorge Adrian Kittl

Person

Patents Grantslast 30 patents

Metal-insulator-metal capacitor and method for manufacturing thereof

Method of manufacturing low resistivity contacts on n-type germanium

Method for producing a metal-insulator-metal capacitor for use in s...

Dielectric layer for flash memory device and method for manufacturi...

Method and system for improved nickel silicide

Method for forming a nickelsilicide FUSI gate

Use of dopants to provide low defect gate full silicidation

Method for forming a nickelsilicide FUSI gate

Dual workfunction semiconductor device

Method and system for improved nickel silicide

Semiconductor device with reduced diffusion of workfunction modulat...

Method of forming a Yb-doped Ni full silicidation low work function...

Method for forming a fully silicided gate and devices obtained thereof

Patents Applicationslast 30 patents

Method of Manufacturing Low Resistivity Contacts on n-Type Germanium

Metal-Insulator-Metal Capacitor and Method for Manufacturing Thereof

Method for Producing a Metal-Insulator-Metal Capacitor for Use in S...

Method for Forming a Nickelsilicide FUSI Gate

DIELECTRIC LAYER FOR FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURI...

METHOD AND SYSTEM FOR IMPROVED NICKEL SILICIDE

Method for Forming a Memory Cell Comprising a Capacitor Having a St...

DUAL WORKFUNCTION SEMICONDUCTOR DEVICE

Method for Forming a Nickelsilicide FUSI Gate

USE OF DOPANTS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION

USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION

USE OF LOW TEMPERATURE ANNEAL TO PROVIDE LOW DEFECT GATE FULL SILIC...

Semiconductor device comprising a doped metal comprising main elect...

Method for forming a semiconductor device and semiconductor device...

Method for forming a silicidated contact

Method for forming a fully silicided gate and devices obtained thereof

LOW WORK FUNCTION METAL ALLOY

Method for Forming Dual Fully Silicided Gates and Devices with Dual...

Method for forming fully silicided gates and devices obtained thereof

Method and system for improved nickel silicide