Joseph F. Shepard JR.

Person

Pishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microwave annealing of flowable oxides with trap layers
- Patent number 10,211,045
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified tungsten silicon
- Patent number 10,192,822
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Domingo A. Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgaps to isolate metallization features
- Patent number 10,043,753
- Issue date Aug 7, 2018
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,831,084
- Issue date Nov 28, 2017
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit structure having thin gate dielectric device and...
- Patent number 9,806,161
- Issue date Oct 31, 2017
- GLOBALFOUNDRIES Inc.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydroxyl group termination for nucleation of a dielectric metallic...
- Patent number 9,373,501
- Issue date Jun 21, 2016
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including graded gate stack, related method an...
- Patent number 9,257,519
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES, INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing scaled equivalent oxide thickness gate stac...
- Patent number 9,099,461
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concurrently forming nFET and pFET gate dielectric layers
- Patent number 9,059,315
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite high-k gate dielectric stack for reducing gate leakage
- Patent number 9,029,959
- Issue date May 12, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating layers on different semiconductor materials
- Patent number 8,592,325
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Joseph F. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of silicon oxide and oxynitride having sub-nanometer th...
- Patent number 8,492,290
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration system via metal oxide conversion
- Patent number 6,794,721
- Issue date Sep 21, 2004
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride island formation for increased capacitance
- Patent number 6,770,526
- Issue date Aug 3, 2004
- Infineon Technologies North America Corp.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant materials forming components of DRAM such...
- Patent number 6,743,670
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for salicide trench capacitor plate electrode
- Patent number 6,664,161
- Issue date Dec 16, 2003
- International Business Machines Corporation
- Michael Patrick Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant materials
- Patent number 6,653,246
- Issue date Nov 25, 2003
- International Business Machines Corporation
- Michael P. Chudzik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
X-ray printing personalization technique
- Patent number 6,652,956
- Issue date Nov 25, 2003
- International Business Machines Corporation
- Lawrence A. Clevenger
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
X-ray printing personalization technique
- Patent number 6,638,681
- Issue date Oct 28, 2003
- International Business Machines Corporation
- Lawrence A. Clevenger
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Low resistivity deep trench fill for DRAM and EDRAM applications
- Patent number 6,620,724
- Issue date Sep 16, 2003
- Infineon Technologies AG
- Uwe Schroeder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant materials forming components of DRAM such...
- Patent number 6,563,160
- Issue date May 13, 2003
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high dielectric constant material
- Patent number 6,541,331
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Michael P. Chudzik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High dielectric constant materials as gate dielectrics (insulators)
- Patent number 6,509,612
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High dielectric constant materials forming components of DRAM stora...
- Patent number 6,441,421
- Issue date Aug 27, 2002
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable stoichiometry silicon nitride barrier films for tunable et...
- Patent number 6,268,299
- Issue date Jul 31, 2001
- International Business Machines Corporation
- Rajarao Jammy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High performance/high density BICMOS process
- Patent number 6,071,767
- Issue date Jun 6, 2000
- International Business Machines Corporation
- Michael Monkowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packing density for flash memories
- Patent number 5,892,257
- Issue date Apr 6, 1999
- International Business Machines Corporation
- Joyce Elizabeth Acocella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation with self aligned PSG layer
- Patent number 5,729,043
- Issue date Mar 17, 1998
- International Business Machines Corporation
- Joseph F. Shepard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with self-aligned bottom gate
- Patent number 5,663,578
- Issue date Sep 2, 1997
- International Business Machines Corporation
- Louis Lu-Chen Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for front-side gettering of silicon-on-insulat...
- Patent number 5,646,053
- Issue date Jul 8, 1997
- International Business Machines Corporation
- Dominic Joseph Schepis
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHALLOW TRENCH ISOLATION (STI) GAP FILL
- Publication number 20190027556
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED FIN TO REDUCE FIN BENDING
- Publication number 20190019862
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- A K M Zahidur Rahim CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAPS TO ISOLATE METALLIZATION FEATURES
- Publication number 20180166383
- Publication date Jun 14, 2018
- GLOBALFOUNDRIES INC.
- Huy CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...
- Publication number 20170294519
- Publication date Oct 12, 2017
- GLOBALFOUNDRIES INC.
- Shahrukh A. Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED TUNGSTEN SILICON
- Publication number 20160240478
- Publication date Aug 18, 2016
- GLOBALFOUNDRIES Inc.
- Domingo A. Ferrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20160027640
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...
- Publication number 20140308821
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Takashi Ando
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Concurrently Forming nFET and pFET Gate Dielectric Layers
- Publication number 20140187028
- Publication date Jul 3, 2014
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION OF PURE METALS IN 3D STRUCTURES
- Publication number 20140183051
- Publication date Jul 3, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...
- Publication number 20140070334
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE
- Publication number 20140001570
- Publication date Jan 2, 2014
- GLOBALFOUNDRIES INC.
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...
- Publication number 20130330843
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...
- Publication number 20130277765
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER
- Publication number 20080102650
- Publication date May 1, 2008
- Edward Dennis Adams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined Stepper And Deposition Tool
- Publication number 20070128859
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Michael P. Chudzik
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE
- Publication number 20070111430
- Publication date May 17, 2007
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COOLING SYSTEM FOR A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING...
- Publication number 20070064395
- Publication date Mar 22, 2007
- Howard Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20060289903
- Publication date Dec 28, 2006
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling system for a semiconductor device and method of fabricating...
- Publication number 20060099815
- Publication date May 11, 2006
- Howard Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR THE DETERMINATION OF FILM CONTINUITY AND GROWTH MODES I...
- Publication number 20060035393
- Publication date Feb 16, 2006
- International Business Machines Corporation
- Michael P. Chudzik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming metal/high-k gate stacks with high mobility
- Publication number 20050280105
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Wanda Andreoni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE
- Publication number 20050266652
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cooling system for a semiconductor device and method of fabricating...
- Publication number 20050059238
- Publication date Mar 17, 2005
- International Business Machines Corporation
- Howard Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density chip carrier with integrated passive devices
- Publication number 20050023664
- Publication date Feb 3, 2005
- Michael Patrick Chudzik
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
METHOD FOR FORMING A UNIFORM DISTRIBUTION OF NITROGEN IN SILICON OX...
- Publication number 20040256664
- Publication date Dec 23, 2004
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration system via metal oxide conversion
- Publication number 20040224471
- Publication date Nov 11, 2004
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration system via metal oxide conversion
- Publication number 20040119128
- Publication date Jun 24, 2004
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density chip carrier with integrated passive devices
- Publication number 20040108587
- Publication date Jun 10, 2004
- Michael Patrick Chudzik
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
PREVENTION OF Ta2O5 MIM CAP SHORTING IN THE BEOL ANNEAL CYCLES
- Publication number 20040104420
- Publication date Jun 3, 2004
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon nitride island formation for increased capacitance
- Publication number 20040095896
- Publication date May 20, 2004
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS

Joseph F. Shepard JR.

Person

Patents Grantslast 30 patents

Microwave annealing of flowable oxides with trap layers

Modified tungsten silicon

Airgaps to isolate metallization features

Hydroxyl group termination for nucleation of a dielectric metallic...

Integrated circuit structure having thin gate dielectric device and...

Hydroxyl group termination for nucleation of a dielectric metallic...

Semiconductor device including graded gate stack, related method an...

Method of manufacturing scaled equivalent oxide thickness gate stac...

Concurrently forming nFET and pFET gate dielectric layers

Composite high-k gate dielectric stack for reducing gate leakage

Insulating layers on different semiconductor materials

Fabrication of silicon oxide and oxynitride having sub-nanometer th...

Integration system via metal oxide conversion

Silicon nitride island formation for increased capacitance

High dielectric constant materials forming components of DRAM such...

Method and structure for salicide trench capacitor plate electrode

High dielectric constant materials

X-ray printing personalization technique

X-ray printing personalization technique

Low resistivity deep trench fill for DRAM and EDRAM applications

High dielectric constant materials forming components of DRAM such...

Method of manufacturing high dielectric constant material

High dielectric constant materials as gate dielectrics (insulators)

High dielectric constant materials forming components of DRAM stora...

Variable stoichiometry silicon nitride barrier films for tunable et...

High performance/high density BICMOS process

Packing density for flash memories

Shallow trench isolation with self aligned PSG layer

Thin film transistor with self-aligned bottom gate

Method and structure for front-side gettering of silicon-on-insulat...

Patents Applicationslast 30 patents

SHALLOW TRENCH ISOLATION (STI) GAP FILL

COALESCED FIN TO REDUCE FIN BENDING

AIRGAPS TO ISOLATE METALLIZATION FEATURES

INTEGRATED CIRCUIT STRUCTURE HAVING THIN GATE DIELECTRIC DEVICE AND...

MODIFIED TUNGSTEN SILICON

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

HYDROXYL GROUP TERMINATION FOR NUCLEATION OF A DIELECTRIC METALLIC...

Concurrently Forming nFET and pFET Gate Dielectric Layers

DEPOSITION OF PURE METALS IN 3D STRUCTURES

SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...

COMPOSITE HIGH-K GATE DIELECTRIC STACK FOR REDUCING GATE LEAKAGE

METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...

SEMICONDUCTOR DEVICE INCLUDING GRADED GATE STACK, RELATED METHOD AN...

METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER

Combined Stepper And Deposition Tool

HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE

COOLING SYSTEM FOR A SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING...

Method of forming metal/high-k gate stacks with high mobility

Cooling system for a semiconductor device and method of fabricating...

METHODS FOR THE DETERMINATION OF FILM CONTINUITY AND GROWTH MODES I...

Method of forming metal/high-k gate stacks with high mobility

HIGH DENSITY MIMCAP WITH A UNIT REPEATABLE STRUCTURE

Cooling system for a semiconductor device and method of fabricating...

High density chip carrier with integrated passive devices

METHOD FOR FORMING A UNIFORM DISTRIBUTION OF NITROGEN IN SILICON OX...

Integration system via metal oxide conversion

Integration system via metal oxide conversion

High density chip carrier with integrated passive devices

PREVENTION OF Ta2O5 MIM CAP SHORTING IN THE BEOL ANNEAL CYCLES

Silicon nitride island formation for increased capacitance