Joseph P. Mannaerts

Person

Summit, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making an article comprising an oxide layer on a GaAs-bas...
- Patent number 6,495,407
- Issue date Dec 17, 2002
- Agere Systems Inc.
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising an oxide layer on a GaAs or GaN-based semiconduc...
- Patent number 6,469,357
- Issue date Oct 22, 2002
- Agere Systems Guardian Corp.
- Minghwei Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High dielectric constant gate oxides for silicon-based devices
- Patent number 6,404,027
- Issue date Jun 11, 2002
- Agere Systems Guardian Corp.
- Minghwei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising an oxide layer on GAN
- Patent number 5,912,498
- Issue date Jun 15, 1999
- Lucent Technologies Inc.
- William Scott Hobson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaAs-based MOSFET, and method of making same
- Patent number 5,903,037
- Issue date May 11, 1999
- Lucent Technologies Inc.
- Alfred Yi Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Article comprising a gallium layer on a GaAs-based semiconductor, a...
- Patent number 5,821,171
- Issue date Oct 13, 1998
- Lucent Technologies Inc.
- Minghwei Hong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for removing surface contaminants from III-V semiconductors
- Patent number 5,275,687
- Issue date Jan 4, 1994
- AT&T Bell Laboratories
- Kent D. Choquette
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making an article comprising a periodic heteroepitaxial s...
- Patent number 5,213,995
- Issue date May 25, 1993
- AT&T Bell Laboratories
- Young-Kai Chen
- B82 - NANO-TECHNOLOGY

Joseph P. Mannaerts

Person

Patents Grantslast 30 patents

Method of making an article comprising an oxide layer on a GaAs-bas...

Article comprising an oxide layer on a GaAs or GaN-based semiconduc...

High dielectric constant gate oxides for silicon-based devices

Article comprising an oxide layer on GAN

GaAs-based MOSFET, and method of making same

Article comprising a gallium layer on a GaAs-based semiconductor, a...

Process for removing surface contaminants from III-V semiconductors

Method of making an article comprising a periodic heteroepitaxial s...