McKee, R.A., Walker, F.J., M.F. Chisholm, “Crystalline Oxides on Silicon: The First Five Monolayers” Physical Review Letters vol. 81, No. 14, Oct. 5, 1998. |
S.A. Campbell, D.C. Gilmer, H.S. Kim, M.A. Gribelyuk, G.D. Wilk W.L. Gladfelter, “Composite SiO2TiO2 Gate Insulator Stacks Formed From Tetranitrato Titanium” Election Dev. p. 104 1997. |
S.C. Choi, M.H. CHO, S.W. Whangtoo, C.N. Whang, Dept. of Physics, Yonsei University, Seoul 120-749, Korea; S.B. Kang, S.I. Lee, M.Y. Lee Semiconductor Research Center, Samsung Electronics Co. Ltd. Suwon 440-600, Korea. |
Keizo Harada, Hidenori Nakanishi, Hideo Itozaki, Shuji Yazu, “Growth of Buffer Layers on Si Substrate for High-Tc Superconducting Thin Films” Japanese Journal of Applied Physics, vol. 30, No. 5, May 1991, pp. 934-938. |
Hirofumi Fukumoto, Takeshi Imura, Yukio Osaka, “Heteroepitaxial Growth of Y2O3 films on Silicon” Applied Phys. Letter ss(4) Jul. 24, 1999. |
M. Gurvitch, L.Manchanda, J.M. Gibson, “Study of thermally Oxidized Yttrium films on Silicon” Applied Physics Lett. 51(12) Sep. 21, 1987. |
Z. Yu, J. Ramdani, J.A. Curless, J.M. Finder, C.D. Overgaard, R. Droopad, K.W. Eisenbeiser, J.A. Hallmark, W.J. OOMS (Physical Sciences Research Laboratories—Motorola Labs) J.R. Conner, V.S. Kaushik(Motorola Digital DNA Labs) “Epitaxial Perovskite thin films grown on silicon by molecular beam epitaxy” MBE Conference, Banff, Canada October 10, 1999. |