Juang-Ke Yeh

Person

Hshin Chu Shian, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method to fabricate a non-smiling effect structure in split-gate fl...
- Patent number 6,753,569
- Issue date Jun 22, 2004
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel EEPROM and flash EEPROM devices
- Patent number 6,509,603
- Issue date Jan 21, 2003
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped polysilicon as the floating-gate of a split-gate flash cell
- Patent number 6,483,159
- Issue date Nov 19, 2002
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate a non-smiling effect structure in split-gate fl...
- Patent number 6,358,796
- Issue date Mar 19, 2002
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for a snap-back flash EEPROM cell
- Patent number 6,303,454
- Issue date Oct 16, 2001
- Taiwan Semiconductor Manufacturing Company
- Juang-Ker Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
P-channel EEPROM devices
- Patent number 6,246,089
- Issue date Jun 12, 2001
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of undoped polysilicon as the floating-gate o...
- Patent number 6,121,088
- Issue date Sep 19, 2000
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of P-channel EEprom and flash EEprom devices
- Patent number 6,060,360
- Issue date May 9, 2000
- Taiwan Semiconductor Manufacturing Company
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erase method of flash EEPROM by using snapback characteristic
- Patent number 6,055,183
- Issue date Apr 25, 2000
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Chou Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase method to improve flash EEPROM endurance by combining high vo...
- Patent number 6,049,484
- Issue date Apr 11, 2000
- Taiwan Semiconductor Manufacturing Company
- Jian-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to improve flash EEPROM cell write/erase threshold voltage c...
- Patent number 5,949,717
- Issue date Sep 7, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Chou Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Method to erase a flash EEPROM using negative gate source erase fol...
- Patent number 5,903,499
- Issue date May 11, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Reay Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixed mode erase method to improve flash eeprom write/erase thresho...
- Patent number 5,862,078
- Issue date Jan 19, 1999
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Juang-Ker Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Bi-modal erase method for eliminating cycling-induced flash EEPROM...
- Patent number 5,838,618
- Issue date Nov 17, 1998
- Taiwan Semiconductor Manufacturing Company Ltd.
- Jian-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Clipped sine shaped waveform to reduce the cycling-induced electron...
- Patent number 5,726,933
- Issue date Mar 10, 1998
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jian-Hsing Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Method to fabricate a non-smiling effect structure in split-gate fl...
- Publication number 20020055205
- Publication date May 9, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-channel EEPROM and flash EEPROM devices and method of manufacture...
- Publication number 20010029076
- Publication date Oct 11, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Yai-Fen Lin
- H01 - BASIC ELECTRIC ELEMENTS

Juang-Ke Yeh

Person

Patents Grantslast 30 patents

Method to fabricate a non-smiling effect structure in split-gate fl...

P-channel EEPROM and flash EEPROM devices

Undoped polysilicon as the floating-gate of a split-gate flash cell

Method to fabricate a non-smiling effect structure in split-gate fl...

Process for a snap-back flash EEPROM cell

P-channel EEPROM devices

Method of manufacture of undoped polysilicon as the floating-gate o...

Method of manufacture of P-channel EEprom and flash EEprom devices

Erase method of flash EEPROM by using snapback characteristic

Erase method to improve flash EEPROM endurance by combining high vo...

Method to improve flash EEPROM cell write/erase threshold voltage c...

Method to erase a flash EEPROM using negative gate source erase fol...

Mixed mode erase method to improve flash eeprom write/erase thresho...

Bi-modal erase method for eliminating cycling-induced flash EEPROM...

Clipped sine shaped waveform to reduce the cycling-induced electron...

Patents Applicationslast 30 patents

Method to fabricate a non-smiling effect structure in split-gate fl...

P-channel EEPROM and flash EEPROM devices and method of manufacture...