Judy Wang

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma etching carbonaceous layers with sulfur-based etchants
- Patent number 8,133,819
- Issue date Mar 13, 2012
- Applied Materials, Inc.
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process with controlled critical dimension shrink
- Patent number 7,838,432
- Issue date Nov 23, 2010
- Applied Materials, Inc.
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen-free amorphous carbon mask etch having high selectivity to...
- Patent number 7,807,064
- Issue date Oct 5, 2010
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric plasma etch process with in-situ amorphous carbon mask w...
- Patent number 7,510,976
- Issue date Mar 31, 2009
- Applied Materials, Inc.
- Shing-Li Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to open carbon based hardmask
- Patent number 7,432,210
- Issue date Oct 7, 2008
- Applied Materials, Inc.
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch method using a dielectric etch chamber with expanded process w...
- Patent number 6,403,491
- Issue date Jun 11, 2002
- Applied Materials, Inc.
- Jingbao Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS
- Publication number 20090212010
- Publication date Aug 27, 2009
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING USING ADVANCED PATTERNING FILM IN CAPACITIVE COU...
- Publication number 20090023294
- Publication date Jan 22, 2009
- Applied Materials, Inc.
- JUDY WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to open carbon based hardmask overlying a dielectric layer
- Publication number 20080286977
- Publication date Nov 20, 2008
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH PROCESS WITH CONTROLLED CRITICAL DIMENSION SHRINK
- Publication number 20080254638
- Publication date Oct 16, 2008
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO...
- Publication number 20080230511
- Publication date Sep 25, 2008
- APPLIED MATERIALS, INC.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING HIGH ASPECT RATIO FEATURES
- Publication number 20080203056
- Publication date Aug 28, 2008
- JUDY WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric plasma etch process with in-situ amorphous carbon mask w...
- Publication number 20070249171
- Publication date Oct 25, 2007
- APPLIED MATERIALS, INC.
- Shing-Li Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to open carbon based hardmask
- Publication number 20070077780
- Publication date Apr 5, 2007
- Judy Wang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Plasma etching carbonaceous layers with sulfur-based etchants

Etch process with controlled critical dimension shrink

Halogen-free amorphous carbon mask etch having high selectivity to...

Dielectric plasma etch process with in-situ amorphous carbon mask w...

Process to open carbon based hardmask

Etch method using a dielectric etch chamber with expanded process w...

Patents Applicationslast 30 patents

PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS

METHOD FOR ETCHING USING ADVANCED PATTERNING FILM IN CAPACITIVE COU...

Process to open carbon based hardmask overlying a dielectric layer

ETCH PROCESS WITH CONTROLLED CRITICAL DIMENSION SHRINK

HALOGEN-FREE AMORPHOUS CARBON MASK ETCH HAVING HIGH SELECTIVITY TO...

METHODS FOR ETCHING HIGH ASPECT RATIO FEATURES

Dielectric plasma etch process with in-situ amorphous carbon mask w...

Process to open carbon based hardmask