Jueyang Liu

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of Fin field-effect transistor
- Patent number 11,495,502
- Issue date Nov 8, 2022
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth process for semiconductor device and semiconductor...
- Patent number 11,476,114
- Issue date Oct 18, 2022
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING RECESS AND FILLING EPITAXIAL LAYER IN SITU
- Publication number 20220102145
- Publication date Mar 31, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yaozeng WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Growth Process for Semiconductor Device and Semiconductor...
- Publication number 20210398805
- Publication date Dec 23, 2021
- Shanghai Huali Integrated Circuit Corporation
- Huojin Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF FIN FIELD-EFFECT TRANSISTOR
- Publication number 20210375696
- Publication date Dec 2, 2021
- Shanghai Huali Integrated Circuit Corporation
- Huojin TU
- H01 - BASIC ELECTRIC ELEMENTS