Jun KOMIYAMA

Person

Hadano-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor substrate and method of manufacturing the same
- Patent number 11,605,716
- Issue date Mar 14, 2023
- COORSTEK KK
- Hiroshi Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Audio reproduction device
- Patent number 11,509,983
- Issue date Nov 22, 2022
- Sony Group Corporation
- Takayuki Negishi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nitride semiconductor substrate
- Patent number 11,201,217
- Issue date Dec 14, 2021
- COORSTEK KK
- Kenichi Eriguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate
- Patent number 10,825,895
- Issue date Nov 3, 2020
- COORSTEK KK
- Yoshihisa Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate
- Patent number 10,068,858
- Issue date Sep 4, 2018
- COORSTEK KK
- Yoshihisa Abe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor substrate having recesses at interface betwee...
- Patent number 9,748,344
- Issue date Aug 29, 2017
- COORSTEK KK
- Noriko Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate
- Patent number 9,536,955
- Issue date Jan 3, 2017
- COORSTEK KK
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate
- Patent number 9,530,846
- Issue date Dec 27, 2016
- COORSTEK KK
- Noriko Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate
- Patent number 9,117,743
- Issue date Aug 25, 2015
- COVALENT MATERIALS CORPORTION
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of analyzing nitride semiconductor layer and method of manuf...
- Patent number 9,086,321
- Issue date Jul 21, 2015
- Covalent Materials Corporation
- Yoshihata Yanase
- G01 - MEASURING TESTING
Information Patent Grant
Nitride semiconductor substrate and method of manufacturing the same
- Patent number 8,785,942
- Issue date Jul 22, 2014
- Covalent Materials Corporation
- Akira Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate
- Patent number 8,637,960
- Issue date Jan 28, 2014
- Covalent Material Corporation
- Yoshihisa Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate comprising a multilayer buffer layer
- Patent number 8,212,288
- Issue date Jul 3, 2012
- Covalent Materials Corporation
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate having multiple buffer layers
- Patent number 8,148,753
- Issue date Apr 3, 2012
- Covalent Materials Corporation
- Hiroshi Oishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Compound semiconductor and compound semiconductor device using the...
- Patent number 7,368,757
- Issue date May 6, 2008
- Covalent Materials Corporation
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for growing electro-optical single crystal thin film and...
- Patent number 7,262,485
- Issue date Aug 28, 2007
- Covalent Materials Corporation
- Yoshihisa Abe
- G02 - OPTICS
Information Patent Grant
Semiconductor wafer and its manufacturing method
- Patent number 6,936,490
- Issue date Aug 30, 2005
- Toshiba Ceramics Co, Ltd.
- Yoshihisa Abe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MANUFACTURING MEMBER AND MANUFACTURING METHOD THEREFOR
- Publication number 20220068614
- Publication date Mar 3, 2022
- COORSTEK KK
- Masahiko ICHISHIMA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
AUDIO REPRODUCTION DEVICE
- Publication number 20220053252
- Publication date Feb 17, 2022
- SONY GROUP CORPORATION
- TAKAYUKI NEGISHI
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210184004
- Publication date Jun 17, 2021
- CoorsTek KK
- Hiroshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20210028284
- Publication date Jan 28, 2021
- CoorsTek KK
- Kenichi ERIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20200194580
- Publication date Jun 18, 2020
- CoorsTek KK
- Yoshihisa ABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20200194545
- Publication date Jun 18, 2020
- CoorsTek KK
- Yoshihisa ABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20180151714
- Publication date May 31, 2018
- CoorsTek KK
- Noriko OMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE
- Publication number 20170110414
- Publication date Apr 20, 2017
- CoorsTek KK
- Yoshihisa ABE
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20170011919
- Publication date Jan 12, 2017
- CoorsTek KK
- Noriko Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20160293710
- Publication date Oct 6, 2016
- CoorsTek KK
- Noriko Omori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20140339679
- Publication date Nov 20, 2014
- COVALENT MATERIALS CORPORATION
- Jun KOMIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20140319535
- Publication date Oct 30, 2014
- Covalent Materials Corporation
- Jun KOMIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ANALYZING NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUF...
- Publication number 20140055783
- Publication date Feb 27, 2014
- Covalent Materials Corporation
- Yoshihata YANASE
- G01 - MEASURING TESTING
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20130082355
- Publication date Apr 4, 2013
- COVALENT MATERIALS CORPORATION
- Yoshihisa ABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120211763
- Publication date Aug 23, 2012
- Covalent Materials Corporation
- Akira Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE
- Publication number 20110062556
- Publication date Mar 17, 2011
- Covalent Materials Corporation
- Jun KOMIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor substrate
- Publication number 20100244100
- Publication date Sep 30, 2010
- COVALENT MATERIALS CORPORATION
- Hiroshi Oishi
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE
- Publication number 20090065812
- Publication date Mar 12, 2009
- COVALENT MATERIALS CORPORATION
- Yoshihisa ABE
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE
- Publication number 20080224268
- Publication date Sep 18, 2008
- COVALENT MATERIALS CORPORATION
- Yoshihisa Abe
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor single crystal film
- Publication number 20070210304
- Publication date Sep 13, 2007
- TOSHIBA CERAMICS CO., LTD.
- Jun Komiyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for compound semiconductor device and compound semiconduc...
- Publication number 20070069216
- Publication date Mar 29, 2007
- TOSHIBA CERAMICS CO., LTD.
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor and compound semiconductor device using the...
- Publication number 20060138448
- Publication date Jun 29, 2006
- TOSHIBA CERAMICS CO., LTD.
- Jun Komiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate for growing electro-optical single crystal thin film and...
- Publication number 20060011941
- Publication date Jan 19, 2006
- TOSHIBA CERAMICS CO., LTD.
- Yoshihisa Abe
- G02 - OPTICS
Information Patent Application
Substrates for growth of chemical compound semiconductors, chemical...
- Publication number 20050263754
- Publication date Dec 1, 2005
- TOSHIBA CERAMICS CO., LTD.
- Jun Komiyama
- C30 - CRYSTAL GROWTH

Jun KOMIYAMA

Person

Patents Grantslast 30 patents

Nitride semiconductor substrate and method of manufacturing the same

Audio reproduction device

Nitride semiconductor substrate

Nitride semiconductor substrate

Compound semiconductor substrate

Nitride semiconductor substrate having recesses at interface betwee...

Nitride semiconductor substrate

Nitride semiconductor substrate

Nitride semiconductor substrate

Method of analyzing nitride semiconductor layer and method of manuf...

Nitride semiconductor substrate and method of manufacturing the same

Nitride semiconductor substrate

Compound semiconductor substrate comprising a multilayer buffer layer

Compound semiconductor substrate having multiple buffer layers

Compound semiconductor and compound semiconductor device using the...

Substrate for growing electro-optical single crystal thin film and...

Semiconductor wafer and its manufacturing method

Patents Applicationslast 30 patents

SEMICONDUCTOR MANUFACTURING MEMBER AND MANUFACTURING METHOD THEREFOR

AUDIO REPRODUCTION DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

COMPOUND SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD OF ANALYZING NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUF...

NITRIDE SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

COMPOUND SEMICONDUCTOR SUBSTRATE

Compound semiconductor substrate

COMPOUND SEMICONDUCTOR SUBSTRATE

NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE

Nitride semiconductor single crystal film

Substrate for compound semiconductor device and compound semiconduc...

Compound semiconductor and compound semiconductor device using the...

Substrate for growing electro-optical single crystal thin film and...

Substrates for growth of chemical compound semiconductors, chemical...