Nitride semiconductor single crystal film

Abstract

The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a spectrum measured by θ-2θ scan of X ray diffraction for a 2H—AlN buffer layer grown on a Si (110) substrate.

FIG. 2 shows a spectrum measured by φ scan of X ray diffraction for the 2H—AlN buffer layer grown on the Si (110) substrate.

FIG. 3 shows spectra measured by ω scan of X ray diffraction for the 2H—AlN buffer layers grown on the Si (110) substrate and a Si (111) substrate.

FIG. 4 shows a spectrum measured by θ-2θ scan of X ray diffraction for a GaN single crystal layer (Example 1) grown through the 2H—AlN buffer layer on the Si (110) substrate.

Claims

1. A nitride semiconductor single crystal grown on a Si (110) substrate with a 2H—AlN buffer layer and comprising GaN (0001) or AlN (0001).

2. A nitride semiconductor single crystal grown on a Si (110) substrate with a 2H—AlN buffer layer and a super-lattice structure of GaN (0001) and AlN (0001).